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Preparation method of MoS2 ceramic target

A ceramic target material, the technology of step 2 is applied in the metal material coating process, ion implantation plating, coating and other directions, which can solve the problem of difficulty in obtaining a ceramic target material with uniform composition, large differences in melting point and density, and low target material purity. and other problems, to achieve the effect of being conducive to industrialized large-scale production, fine and uniform grain size, and stable target performance.

Active Publication Date: 2018-05-22
北京安泰六九新材料科技有限公司 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

MoS 2 The melting point and density of molybdenum and sulfur are very different, and MoS 2 It is easy to decompose, and it is difficult to obtain a ceramic target with uniform composition by ordinary smelting method; and powder metallurgy method can solve this problem
Cold-press sintering and hot-press sintering are two ways to prepare MoS 2 The most commonly used method for target materials, but the prepared targets have problems such as low purity, low density, and uneven organization.

Method used

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  • Preparation method of MoS2 ceramic target
  • Preparation method of MoS2 ceramic target
  • Preparation method of MoS2 ceramic target

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1-12

[0033] Table 1 has listed the hot-pressing sintering process parameter of embodiment 1-12, and concrete preparation steps are as follows:

[0034] (1) Powder pretreatment: use the above MoS 2 Raw material powder, the average Fischer particle size of the powder is 0.65 μm, and it is kept in a vacuum drying oven at 120°C for 3 hours; the dried powder is passed through a 150-mesh vibrating sieve to remove agglomerates and agglomerated phases, and the loose, evenly distributed powder under the sieve is taken spare;

[0035] (2) mold loading, the under-sieve powder that step (1) is obtained is evenly packed in the isostatic graphite mould;

[0036] (3) Hot-press sintering. After the mold loading is completed, place the mold in a hot-press furnace, add an initial pressure of 12MPa, evacuate to below 5Pa, heat up to the highest sintering temperature according to the method described in Table 1, and linearly increase the pressure, and heat Press sintering, the specific sintering par...

Embodiment 13-16

[0048] In Examples 13-16, except that the particle size of the powder is different from that of Example 5, other process parameters are the same as those of Example 5, specifically MoS 2 The particle size of the raw material powder and the properties of the target material are shown in Table 3.

[0049] The performance of the target material prepared by the embodiment 13-16 of table 3

[0050]

Embodiment 17

[0052] The target material of this embodiment is prepared by the following method:

[0053] (1) Powder pretreatment: use the above MoS 2 Raw material powder, the average Fischer particle size of the powder is 0.65 μm, and it is kept in a vacuum drying oven at 120°C for 3 hours; the dried powder is passed through a 150-mesh vibrating sieve to remove agglomerates and agglomerated phases, and the loose, evenly distributed powder under the sieve is taken spare;

[0054] (2) mold loading, the under-sieve powder that step (1) is obtained is evenly packed in the isostatic graphite mould;

[0055] (3) Hot pressing sintering. After the mold loading is completed, place the mold in a hot pressing furnace, add an initial pressure of 12MPa, evacuate to below 5Pa, and then raise the temperature to the highest sintering temperature of 1270℃ at a heating rate of 9℃ / min in one step, and directly Quickly increase the pressure to 38MPa, keep the pressure for 2 hours;

[0056] (4) Demoulding. ...

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Abstract

The invention relates to a preparation method of a MoS2 ceramic target. The preparation method comprises the following steps: drying and sieving a MoS2 raw material powder to obtain a MoS2 powder having a uniform particle size distribution and no agglomeration; uniformly introducing the MoS2 powder into a mold, carrying out hot-press sintering under vacuum conditions, and then carrying out coolingand demolding to obtain a sintered blank; and machining the sintered blank to obtain the target meeting size and surface quality requirements. The preparation method has the advantages of simple technological process, good forming effect, good cost effectiveness, facilitation of industrialized large-scale production, and broad application prospect; the prepared target has a high purity being notless than 99.5%, and has small and uniform crystal grains, the average grain size is not more than 5 [mu]m, the density is not less than 95%, and the target is a single MoS2 phase structure; and the target has stable performances and a good sputtering effect, and can improve the tribological property of a coating as a source material for preparing a solid lubricating coating.

Description

technical field [0001] The present invention relates to a kind of MoS 2 The invention relates to a method for preparing a ceramic target material, which belongs to the technical field of powder metallurgy materials. Background technique [0002] The development of aerospace and space technology and many harsh working conditions such as high temperature and high pressure have exceeded the limit of use of lubricating oil or grease. In this case, solid lubrication technology came into being. It can meet certain working conditions that fluid lubrication cannot meet. It can be effective in special environmental conditions such as high temperature, high load, ultra-low temperature, ultra-high vacuum, strong oxidation, and strong radiation. Lubricate mechanical parts. [0003] Solid lubricant film technology has been the focus of tribological research in the past 30 years, and has solved a series of lubrication problems under special working conditions in aerospace and other mili...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/547C04B35/622C04B35/645C23C14/34
CPCC04B35/547C04B35/622C04B35/645C04B2235/5436C04B2235/5445C04B2235/6562C04B2235/6567C04B2235/6581C04B2235/77C04B2235/786C23C14/3414
Inventor 张凤戈张欠男梁俊才魏铁峰李建奎
Owner 北京安泰六九新材料科技有限公司
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