The invention discloses a defect
analysis method, a storage medium and a terminal. The defect
analysis method comprises the following steps: providing a
machine learning model; training and testing the
machine learning model, and after the
machine learning model passes the test, inputting the characteristic parameters of each to-be-detected
integrated circuit layer of the to-be-detected
wafer into the
machine learning model, and outputting the position of the key defect
integrated circuit layer with the key defect and the position of the potential defect
integrated circuit layer causing the key defect based on a
machine learning model. Based on a
machine learning model, the position of a key defect integrated circuit layer which will generate key defects and the position of a potential defect integrated circuit layer which causes the key defects in the manufacturing process of a
wafer to be detected can be rapidly predicted, and the potential defects associated with cross
layers are identified and predicted through
artificial intelligence. The method has the advantages that manual misjudgment and manual time consumption are reduced, the production efficiency is improved, a better rate can be obtained in a shorter time, and reworking in subsequent tape-out caused by cross-layer defects is avoided as far as possible.