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Transistor based on double barrier tunnel junction resonant tunneling effect

A technology of resonant tunneling and tunnel junction, which is applied in the field of spin transistor devices and can solve problems such as no spin transistor devices yet.

Inactive Publication Date: 2005-04-13
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there is no spin transistor device based on the resonant tunneling effect of the double-barrier tunnel junction.

Method used

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  • Transistor based on double barrier tunnel junction resonant tunneling effect
  • Transistor based on double barrier tunnel junction resonant tunneling effect
  • Transistor based on double barrier tunnel junction resonant tunneling effect

Examples

Experimental program
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Effect test

no. 1 example

[0017] Such as image 3 Shown by silicon dioxide (SiO 2 ) or similar material is formed on a silicon substrate 1; an emitter 3 made of a magnetic material layer is formed on the insulating layer 2, and the magnetization direction of the emitter 3 is fixed; the first The tunnel barrier layer (barrier layer) 4 is formed on the emitter 3; and an intermediate metal layer or semiconductor layer is formed on the first tunnel barrier layer 4, that is, the base 5; The second tunnel barrier layer (barrier layer) 6; a collector electrode 7 made of ferromagnetic material is formed on the second tunnel barrier layer 6, and the magnetization direction of the collector electrode 7 is free and can be changed with the external magnetic field changes; a protective layer 8 is arranged on the collector electrode 7 .

[0018] It should be noted that the aforementioned emitter 3 is formed on one layer of antiferromagnetism, so that the magnetization position of this layer of magnetic material ca...

no. 2 example

[0023] In this embodiment, the schematic sectional view of the transistor structure is similar to that of the first embodiment. Such as image 3 Shown by silicon dioxide (SiO 2 ) or similar material is formed on a silicon substrate 1; an emitter 3 made of a semi-metallic magnetic material layer is formed on the insulating layer 2, and the magnetization direction of the emitter 3 is fixed; a The first tunnel barrier layer (barrier layer) 4 is formed on the emitter 3; The thickness depends on the chosen material and should be comparable to the mean free path length of the material; a second tunnel barrier (barrier layer) 6 formed above the base 5; a collector made of a semi-metallic magnetic material 7 is formed on the second tunnel barrier layer 6 , the magnetization direction of this layer is free and can change with the external magnetic field; a protective layer 8 is arranged on the collector electrode 77 .

[0024] In the above-mentioned embodiment, the material of the b...

no. 3 example

[0027] In the first embodiment and the second embodiment, non-magnetic metal materials or semiconductor materials are used for the base material, and if the material of the base is replaced by a general magnetic material or a semi-metallic magnetic material, due to the properties of the base material The spin-dependent transport characteristics are more conducive to modulating the magnetization direction of the collector through it. In view of this, the third embodiment proposes a spin transistor device in which the base material is a magnetic material. figure 2 The b in it is a schematic diagram of its structure.

[0028] The structure of the transistor of this embodiment is similar to that of the first embodiment. Such as image 3Shown by silicon dioxide (SiO 2 ) or similar material is formed on a silicon substrate 1; an emitter 3 made of a magnetic material layer whose magnetization direction is fixed is formed on the insulating layer 2; a first A tunnel barrier layer ...

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Abstract

This invention discloses a resonant tunnel-through effect transistor based on double potential barrier tunnel junction having an emit pole, a base and a collector, a first and a second tunnel barrier layers. The first barrier is placed between the emitting pole and the base, the second between the base and collector. The base current is the modulation signal altering the magnet direction of the collector, so as to make the modulation modes of the collector signal similar to the base current to generate resonant tunnel through effect and get amplified signal under suitable conditions. This kind of current amplifier can be varied in GHZ, since the bandwidth depends on the inverse velocity of the collector magnetic direction.

Description

technical field [0001] The invention relates to a solid-state switch and amplifying device, that is, a transistor, especially a spin transistor device based on double potential barrier tunnel junction resonant tunneling effect. Background technique [0002] Since the discovery of giant magnetoresistance (GMR) in magnetic multilayer films in 1988, great progress has been made in the research and application of physics and material science. In 1993, Johnson [M. Johnson, Science 260 (1993) 320] proposed a ferromagnetic metal emitter, a non-magnetic metal base with a thickness smaller than the spin diffusion length, and another ferromagnetic metal collector: " Ferromagnetic metal / nonmagnetic metal / ferromagnetic metal" sandwich all-metal spin transistor. figure 1 is a schematic diagram of this all-metal spin transistor. The speed of this all-metal transistor can be compared with that of semiconductor Si devices, but the energy consumption is 10-20 times lower, the density is ab...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/70H01L29/737
CPCB82Y10/00H01L29/66984H01L29/7376
Inventor 曾中明韩秀峰丰家峰王天兴杜关祥李飞飞詹文山
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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