41results about "Tubes without control means" patented technology

A novel use of doped carbonaceous material is disclosed, integral to the operation of Vacuum Diode Heat Pumps and Vacuum Diode Thermionic Generators. In the preferred embodiment, the use of nitrogen-doped diamond enhances the operation of Vacuum Diode Heat Pumps and Vacuum Diode Thermionic Generators.

New, hybrid vacuum electronic devices are proposed, in which the electrons are extracted from the nanotube into vacuum. Each nanotube is either placed on the cathode electrode individually or grown normally to the cathode plane. Arrays of the nanotubes are also considered to multiply the output current. Two- and three-terminal device configurations are discussed. In all the cases considered, the device designs are such that both input and output capacitances are extremely low, while the efficiency of the electron extraction into vacuum is very high, so that the estimated operational frequencies are expected to be in a tera-hertz range. New vacuum triode structure with ballistic electron propagation along the nanotube is also considered.

A nano-scaled field emission electronic device includes a substrate, a cathode electrode, and an anode electrode. The cathode electrode is placed on the substrate and has an emitter. The anode electrode is positioned opposite to and spaced from the cathode electrode. The nano-scaled field emission electronic device further has at least one kind of inert gas filled therein. The following condition is satisfied: h<λe, wherein h indicates a distance between a tip of the emitter and the anode electrode, and λe indicates an average free path of an electron in the inert gases. More advantageously, the following condition is satisfied:h<λe_10.

The present invention discloses a tunneling diode having a band gap material as the collector. This increases the tunneling of electrons having greater energy than the Fermi level from emitter to collector, leading to an increase in the efficiency of heat pumping or power generation by the diode. In a further embodiment the collector comprises a semiconductor on which a layer of band gap material is deposited. This approach also reduces back tunneling of electrons from collector to emitter.

New, hybrid vacuum electron devices are proposed, in which the electrons are extracted from the nanotube into vacuum. Each nanotube is either placed on the cathode electrode individually or grown normally to the cathode plane. Arrays of the nanotubes are also considered to multiply the output current. Two- and three-terminal device configurations are discussed. In all the cases considered, the device designs are such that both input and output capacitances are extremely low, while the efficiency of the electron extraction into vacuum is very high, so that the estimated operational frequencies are expected to be in a tera-hertz range. New vacuum triode structure with ballistic electron propagation along the nanotube is also considered.

The present invention is a method for reducing nanoscale surface roughness. The method involves exposing the surface to an environment that preferentially promotes evaporation of material from the region of nanoscale roughness. The methods involve either heating the surface, or flushing an inert gas across the surface, or a combination of both.

New, hybrid vacuum electron devices are proposed, in which the electrons are extracted from the nanotube into vacuum. Each nanotube is either placed on the cathode electrode individually or grown normally to the cathode plane. Arrays of the nanotubes are also considered to multiply the output current. Two- and three-terminal device configurations are discussed. In all the cases considered, the device designs are such that both input and output capacitances are extremely low, while the efficiency of the electron extraction into vacuum is very high, so that the estimated operational frequencies are expected to be in a tera-hertz range. New vacuum triode structure with ballistic electron propagation along the nanotube is also considered.

A conical diode device is disclosed, comprising a pair of electrodes and a conical housing. The conical housing ensures that the hermetic seal between the electrodes and the housing remains strong despite thermal imbalances between the two electrodes when the device is in operation. In one embodiment, the conical housing additionally serves as a means for controlling the separation between the electrode pair. In a preferred embodiment, the conical actuating element is a quartz piezo-electric cone. In another embodiment, a modified electrode for use in a diode device of the present invention is disclosed, in which indents are made on the surface of the electrode.

An optoelectronic modulator is based on the concentration of an electron beam from an electron gun by a tapered cavity, which sides are photosensitive and change the electrical conductivity under the illumination of light (electromagnetic radiation). The light modulation causes the corresponding changes in the current transported across the walls of the cavity. The remaining part of the electron current exits the cavity aperture and forms an amplitude-modulated divergent electron beam.

The present invention discloses a combined-type vacuum diode used for a high-power microwave source. The combined-type vacuum diode comprises a large outer cylinder which may be connected with the high-power microwave source, a microwave source shielding ring, an insulator, a vacuum side shielding ring, a cathode pedestal, cathodes, a small outer cylinder and anodes. According to the combined-type vacuum diode, a plurality of cathode and anode structures share one insulator, and thus the cathode and anode structures or high-power microwave devices are combined for parallel drive to generate high-power electron beams.

New, hybrid vacuum electronic devices are proposed, in which the electrons are extracted from the nanotube into vacuum. Each nanotube is either placed on the cathode electrode individually or grown normally to the cathode plane. Arrays of the nanotubes are also considered to multiply the output current. Two- and three-terminal device configurations are discussed. In all the cases considered, the device designs are such that both input and output capacitances are extremely low, while the efficiency of the electron extraction into vacuum is very high, so that the estimated operational frequencies are expected to be in a tera-hertz range. New vacuum triode structure with ballistic electron propagation along the nanotube is also considered.

The present invention discloses a tunneling diode having a band gap material as the collector. This increases the tunneling of electrons having greater energy than the Fermi level from emitter to collector, leading to an increase in the efficiency of heat pumping or power generation by the diode. This approach also reduces back tunneling of electrons from collector to emitter.

An electronic heat pump device has an emitter and a collector, stems supporting these components, a spacing retention member for keeping a spacing between the stems constant, and a sealing member for maintaining a vacuum between the stems. The emitter has a first semiconductor substrate and an emitter electrode, while the collector has a second semiconductor substrate and a collector electrode. The emitter electrode and the collector electrode are disposed so as to be opposed to each other with a space interposed therebetween. At least one of the first and second semiconductor substrates is integrally formed with electrically and thermally insulative spacers that keep the space between the emitter electrode and the collector electrode constant.

The present invention provides an electromagnetic wave generation apparatus that is compact and generates a high power terahertz wave. An electromagnetic wave generation apparatus includes: a substrate; a first electrode, having a photoelectron emitting part, formed on one of the surfaces of the substrate; a second electrode formed on the surface of the substrate; a power supply source that applies voltage to between the first electrode and the second electrode so that the potential of the second electrode becomes higher than the potential of the first electrode; and a light source that radiates one of time modulated light and wavelength modulated light, and in the apparatus, the photoelectron emitting part (a) emits electrons when light is irradiated and (b) is placed at a position which an incident light from the light source enters and from which the emitted electrons run to the electron incidence plane of the second electrode.

The electron emission device includes a first electrode; a semiconductor barrier that has a first face disposed to face the first electrode and a second face which is opposite face of the first face, and is formed with a wide bandgap semiconductor; an insulating material that forms a space sealed between the first electrode and the semiconductor barrier; an inert gas that is encapsulated in the space; a second electrode that is disposed to face a second face of the semiconductor barrier interposing vacuum therebetween; a first voltage applying unit that applies a voltage between the first electrode and the semiconductor barrier; and a second voltage applying unit that applies a voltage between the semiconductor barrier and the second electrode.

A method of manufacturing an article with integral active electronic component comprising: using an additive manufacturing process to: a) form a non-electrically conductive substrate; b) form a non-electrically conductive perforated layer having an aperture; c) form electrically conductive anode and cathode elements spaced in the aperture; d) deposit a conductive electrical connection to each of the elements suitable for imparting an electrical potential difference between the elements; e) form a non-electrically conductive sealing layer atop the perforated layer so as to retain and seal the aperture in the perforated layer.

An optoelectronic modulator is based on the concentration of an electron beam from an electron gun by a tapered cavity, which sides are photosensitive and change the electrical conductivity under the illumination of light (electromagnetic radiation). The light modulation causes the corresponding changes in the current transported across the walls of the cavity. The remaining part of the electron current exits the cavity aperture and forms an amplitude-modulated divergent electron beam.

The present invention provides an electromagnetic wave generation apparatus that is compact and generates a high power terahertz wave. An electromagnetic wave generation apparatus includes: a substrate; a first electrode, having a photoelectron emitting part, formed on one of the surfaces of the substrate; a second electrode formed on the surface of the substrate; a power supply source that applies voltage to between the first electrode and the second electrode so that the potential of the second electrode becomes higher than the potential of the first electrode; and a light source that radiates one of time modulated light and wavelength modulated light, and in the apparatus, the photoelectron emitting part (a) emits electrons when light is irradiated and (b) is placed at a position which an incident light from the light source enters and from which the emitted electrons run to the electron incidence plane of the second electrode.

The process is based upon the steps of: forming a trench in a body including a substrate and at least one insulating layer; and depositing a metal layer above the body for closing the open end or mouth of the trench. The trench is formed by selectively etching the body, wherein the reaction by-products deposit on the walls of the trench and form a passivation layer along the walls of the trench and a restriction element in proximity of the mouth of the trench.

The embodiments of the present invention disclose an array type terahertz vacuum diode device and a manufacturing method thereof. The array type terahertz vacuum diode device comprises a substrate anda plurality of terahertz vacuum diodes; the plurality of terahertz vacuum diodes are arranged in an array on the substrate; each of the terahertz vacuum diodes comprises a photocathode, a vacuum channel layer and an anode; the vacuum channel layer is provided with a vacuum channel; the vacuum channel extends through the vacuum channel layer; the photocathode and the anode are disposed at two endsof the vacuum channel respectively; a sealed cavity is formed among the photocathode, the vacuum channel layer and the anode; the vacuum channel is in the shape of a circular truncated cone; and thecontact area of the photocathode and the vacuum channel is smaller than the contact area of the anode and the vacuum channel. The array type terahertz vacuum diode device provided by the embodiments of the present invention is a novel terahertz vacuum electronic device.

The process is based upon the steps of: forming a trench in a body including a substrate and at least one insulating layer; and depositing a metal layer above the body for closing the open end or mouth of the trench. The trench is formed by selectively etching the body, wherein the reaction by-products deposit on the walls of the trench and form a passivation layer along the walls of the trench and a restriction element in proximity of the mouth of the trench.

The present invention discloses an improvement for maintaining nanometer separation between electrodes in tunneling, thermal tunneling, diode, thermionic, thermoelectric, thermophotovoltaic, current limiting, resettable fusing, relays, circuit breakers and other devices the design of. At least one electrode has a curved shape, the curvature of which is changed by temperature. Some embodiments use nanoseparation to limit or stop the electrical current. Other embodiments reduce heat conduction between the two electrodes when compared to the prior art. The result is an electronic device that maintains two close parallel electrodes in a stable equilibrium with a nanogap between the two electrodes over a large area in a simple configuration for ease of manufacturability, and the resulting The devices described above are used to convert heat into electricity for cooling, or to limit or interrupt current flow.

The present invention discloses a combined-type vacuum diode used for a high-power microwave source. The combined-type vacuum diode comprises a large outer cylinder which may be connected with the high-power microwave source, a microwave source shielding ring, an insulator, a vacuum side shielding ring, a cathode pedestal, cathodes, a small outer cylinder and anodes. According to the combined-type vacuum diode, a plurality of cathode and anode structures share one insulator, and thus the cathode and anode structures or high-power microwave devices are combined for parallel drive to generate high-power electron beams.

An application of non-crystal diamond is disclosed. It can emit the greatest deal of electrons in vacuum by supplying the lowest energy to it. It contains the carbon atoms (at least 90%) and has a emitting surface with the roughness of 10-10000nm. It can be used for various vacuum devices such as switch, laser diode, etc.

A fine vacuum tube element and other electronic elements are integrated and formed on a semiconductor substrate, and the fine vacuum tube element and the other electronic elements transmit signals to and from each other. When integrating the vacuum tube element with the other electronic elements, a quantum effect is realized in a room temperature environment by utilizing ballistic electrons (non-scattering electrons) traveling through the vacuum, and in the integrated circuit, an A / D converter is constructed by an interference system such as a Mach-Zehnder interferometer. Also an integrated circuit of an advanced function-integrated type is provided, comprising an interference system such as a Mach-Zehnder interferometer wherein weighting of the Mach-Zehnder interferometer is constituted for image processing and signal code conversion. A very high-speed light-receiving integrated circuit for optical communication is constructed by utilizing a very high-speed optical response characteristic of electron emission of the vacuum element, and a sensor such as a magnetic / electric field sensor is constructed by utilizing a quantum effect of ballistically traveling electrons.

The present application relates to a kind of elliptical chamfer variable-diameter cathode lead structure inhibiting backflow diode and inhibiting diode backflow method, belong to vacuum electron technology field, can effectively reduce the surface field intensity of cathode lead, inhibit field electron emission and delay the ion movement of zero field region to cathode lead.It includes cathode, cathode lead, anode in inhibiting backflow diode.The cathode lead is variable-diameter structure, non-variable-diameter part D is located at both ends, variable-diameter part E is located in the middle, variable-diameter part E is the same throughout radius, chamfer part F adopts elliptical chamfer structure.Non-variable-diameter part D radius is the same with cathode radius, and variable-diameter part E radius is less than cathode radius.The inhibiting diode backflow method includes: reducing the position radius of cathode lead, realizes the optimal cathode lead surface electric field;Both sides of the position radius reduction are smoothly transitioned back to original size, so that the surface electrostatic field of cathode lead position possibly bombarded by anode ion is further reduced.

Embodiments of a method for forming a field emission diode for an electrostatic discharge device include forming a first electrode, a sacrificial layer, and a second electrode. The sacrificial layer separates the first and second electrodes. The method further includes forming a cavity between the first and second electrode by removing the sacrificial layer. The cavity separates the first and second electrodes. The method further includes depositing an electron emission material on at least one of the first and second electrodes through at least one access hole after formation of the first and second electrodes. The access hole is located remotely from a location of electron emission on the first and second electrode.