6results about "Non-electron-emitting control electrodes" patented technology

The invention provides a transistor device and a manufacturing method thereof, and an integrated circuit, and the transistor device comprises a first substrate 1, one side of a first main surface of the first substrate 1 is provided with a cold field electron emission unit, the cold field electron emission unit comprises an electron acceleration layer 4, a high-potential emitter 7 and a low-potential electrode 12, and one side of the first main surface is also provided with a grid electrode 10, at least part of the back electrode metal thin film 11 is arranged in the through hole of the first substrate and is exposed from the second main surface, the electron acceleration layer 4 is arranged between the high-potential emitter 7 and the low-potential electrode 12 in the longitudinal direction perpendicular to the first main surface of the first substrate, and the high-potential emitter 7 is arranged between the gate 10 and the electron acceleration layer 4; and a second substrate (20) having an electron collector (26) provided on the first main surface side thereof, the electron collector (26) being electrically connected to a wiring (23) provided on the second main surface side thereof through a via electrode in the second substrate, and the first main surface of the first substrate (1) and the first main surface of the second substrate (20) being hermetically bonded to each other.

A wire bonded triode for amplification of electromagnetic signals that includes an electron emitter (cathode), control grid, and an electron collector (anode) and having one or more wire bonded structures. A method of making a triode for amplification of electromagnetic signals that includes wirebonding one or more wires to form a wire bonded structure corresponding with one or more of an anode, grid and / or cathode element.

The invention provides a transistor device and a manufacturing method thereof, and an integrated circuit, and the transistor device comprises a first substrate 1, a cold field electron emission unit is disposed on one side of a first main surface of the first substrate, and the cold field electron emission unit comprises an electron acceleration layer 4, a high-potential emitter 7, and a low-potential electrode 12. A grid electrode 10 is further arranged on one side of the first main face of the first substrate, a back electrode metal film 11 is arranged on one side of the second main face of the first substrate, in the longitudinal direction perpendicular to the first main face of the first substrate, an electron accelerating layer 4 is located between a high-potential emitting electrode 7 and a low-potential electrode 12, and the high-potential emitting electrode 7 is located between the grid electrode 10 and the electron accelerating layer 4. And a second substrate (20) having an electron collector (26) provided on the first main surface side thereof, the electron collector (26) being electrically connected to a wiring (23) provided on the second main surface side thereof through a via electrode in the second substrate, and the first main surface of the first substrate (1) and the first main surface of the second substrate (20) being hermetically bonded to each other.

The invention discloses a planar coaxial ring gate nano vacuum channel field emission triode device and method, and relates to the technical field of microelectronic devices and vacuum micro-nano electronics, and the device comprises an insulating substrate, a coaxial ring gate disposed on the insulating substrate, and a medium supporting region disposed around the gate. The emitting electrode and the collecting electrode are arranged on the supporting area and are coaxially arranged; a closed annular nano vacuum gap is formed between the inner edges and the outer edges of the two parts to form a transverse vacuum channel; the coaxial annular grid electrode is located in an annular area below the gap, and the coaxial annular grid electrode and the two electrodes are arranged at intervals in the vertical direction and the plane direction. Through the coaxial ring gates, the electric field modulation uniformity is enhanced, gate interception and local hot spots are suppressed, parasitic capacitance is reduced, and transconductance and GHz-level high-frequency response are improved.

The utility model provides a grid electrode used for a vacuum electronic device, an electron gun and an X-ray tube, the grid electrode comprises a grid electrode substrate, the grid electrode substrate is a flat sheet, the thickness of the grid electrode substrate is 0.1 mm-3mm, and the thermal conductivity of the material of the grid electrode substrate is greater than 200W / (m.K); an electron beam through hole is formed in the gate substrate, the axial direction of the electron beam through hole is perpendicular to the two surfaces of the gate substrate in the thickness direction, and the electron beam through hole enables the gate substrate to be provided with a through hole part and an entity part except the through hole part; after the electron beam through hole is machined in the gate substrate, an outer wrapping layer is fixedly arranged on the surface of the entity part, the outer wrapping layer is made of a metal material, and the thickness of the outer wrapping layer is 10 nm to 50 [mu] m. According to the grid electrode, a large amount of heat generated when electron beams bombard the grid electrode can be conducted away, the high electron passing rate is still achieved under the low kV smaller than 5 kV, and the grid electrode is well suitable for field emission, heat emission, thermal field emission and other various cathode emission materials.

Embodiments of the present disclosure provide a vacuum transistor, an array substrate and an electronic device, and relate to the technical field of vacuum electronics, and are used for improving the control of the gate on the vacuum tunneling current and improving the on-off ratio of the vacuum transistor. The vacuum transistor comprises a substrate, a first electrode, a gate, a second electrode and a via hole. The first electrode, the gate and the second electrode are sequentially stacked on the substrate along a first direction and a direction gradually away from the substrate, and the first direction is the thickness direction of the substrate. The first electrode and the gate, and the gate and the second electrode are both spaced apart along the first direction. The via hole penetrates the second electrode and the film layer between the second electrode and the first electrode along the first direction, and exposes the side surface of the first electrode away from the substrate. The orthogonal projection of the gate on the substrate and the orthogonal projection of the second electrode on the substrate overlap.