12results about "Non-electron-emitting control electrodes" patented technology

The invention provides a transistor device and a manufacturing method thereof, and an integrated circuit, and the transistor device comprises a first substrate 1, one side of a first main surface of the first substrate 1 is provided with a cold field electron emission unit, the cold field electron emission unit comprises an electron acceleration layer 4, a high-potential emitter 7 and a low-potential electrode 12, and one side of the first main surface is also provided with a grid electrode 10, at least part of the back electrode metal thin film 11 is arranged in the through hole of the first substrate and is exposed from the second main surface, the electron acceleration layer 4 is arranged between the high-potential emitter 7 and the low-potential electrode 12 in the longitudinal direction perpendicular to the first main surface of the first substrate, and the high-potential emitter 7 is arranged between the gate 10 and the electron acceleration layer 4; and a second substrate (20) having an electron collector (26) provided on the first main surface side thereof, the electron collector (26) being electrically connected to a wiring (23) provided on the second main surface side thereof through a via electrode in the second substrate, and the first main surface of the first substrate (1) and the first main surface of the second substrate (20) being hermetically bonded to each other.

A wire bonded triode for amplification of electromagnetic signals that includes an electron emitter (cathode), control grid, and an electron collector (anode) and having one or more wire bonded structures. A method of making a triode for amplification of electromagnetic signals that includes wirebonding one or more wires to form a wire bonded structure corresponding with one or more of an anode, grid and / or cathode element.

Provided are an annular gate plasma transistor and a manufacturing method therefor. The annular gate plasma transistor comprises a source electrode layer (1), a gate electrode layer (2) and a drain electrode layer (3), wherein a first insulating layer (4) is provided between the gate electrode layer (2) and the drain electrode layer (3), and a second insulating layer (5) is provided between the source electrode layer (1) and the gate electrode layer (2); several through holes (20) are formed in a gate electrode of the gate electrode layer (2), the first insulating layer (4) and the second insulating layer (5) are of a hollow structure, and the hollow structure of the first insulating layer (4) is connected to the hollow structure of the second insulating layer (5) by means of the through holes (20), so that a closed chamber is formed between the source electrode layer (1) and the drain electrode layer (3), and a source electrode of the source electrode layer (1), the gate electrode of the gate electrode layer (2) and a drain electrode of the drain electrode layer (3) are exposed in the closed chamber; when the annular gate plasma transistor works, there are carriers in the closed cavity; and the movement trajectories of the carriers are regulated, so as to regulate an on-state current of the annular gate plasma transistor. The present disclosure has a relatively strong gate control capability.

The invention provides a transistor device and a manufacturing method thereof, and an integrated circuit, and the transistor device comprises a first substrate 1, a cold field electron emission unit is disposed on one side of a first main surface of the first substrate, and the cold field electron emission unit comprises an electron acceleration layer 4, a high-potential emitter 7, and a low-potential electrode 12. A grid electrode 10 is further arranged on one side of the first main face of the first substrate, a back electrode metal film 11 is arranged on one side of the second main face of the first substrate, in the longitudinal direction perpendicular to the first main face of the first substrate, an electron accelerating layer 4 is located between a high-potential emitting electrode 7 and a low-potential electrode 12, and the high-potential emitting electrode 7 is located between the grid electrode 10 and the electron accelerating layer 4. And a second substrate (20) having an electron collector (26) provided on the first main surface side thereof, the electron collector (26) being electrically connected to a wiring (23) provided on the second main surface side thereof through a via electrode in the second substrate, and the first main surface of the first substrate (1) and the first main surface of the second substrate (20) being hermetically bonded to each other.

The invention discloses a planar coaxial ring gate nano vacuum channel field emission triode device and method, and relates to the technical field of microelectronic devices and vacuum micro-nano electronics, and the device comprises an insulating substrate, a coaxial ring gate disposed on the insulating substrate, and a medium supporting region disposed around the gate. The emitting electrode and the collecting electrode are arranged on the supporting area and are coaxially arranged; a closed annular nano vacuum gap is formed between the inner edges and the outer edges of the two parts to form a transverse vacuum channel; the coaxial annular grid electrode is located in an annular area below the gap, and the coaxial annular grid electrode and the two electrodes are arranged at intervals in the vertical direction and the plane direction. Through the coaxial ring gates, the electric field modulation uniformity is enhanced, gate interception and local hot spots are suppressed, parasitic capacitance is reduced, and transconductance and GHz-level high-frequency response are improved.

The invention discloses a micro-nano vacuum triode and a saturation output method and a preparation method thereof, and relates to the technical field of vacuum micro-nano triodes, and the saturation output method comprises the steps: arranging a crater-shaped micropore grid electrode, enabling the top end of the grid electrode to be higher than the top end of a cathode, weakening the influence of an anode electric field on a cathode surface barrier, and improving the stability of the cathode surface barrier; the saturation output characteristic that the cathode emission current does not change along with the anode voltage is obtained; the emitter with the nanoscale tip curvature radius serves as a cathode, the central axis of the tip of the cathode and the central axis of the crater-shaped micropore grid electrode and the central axis of the micropore anode are located on the same straight line, and the tip curvature radius of the cathode is set to be 0.2-15 nm; and the divergence angle of the emergent electrons at the emitting end of the cathode is within the range that the emergent electrons can pass through the grid micropores and are collected by the anode, so that the current ratio of the anode to the cathode is improved. The problem that the saturation output characteristic of an existing micro-nano vacuum triode is difficult to be compatible with the high anode and cathode current ratio due to the fact that the distance between the cathode and the anode is small is effectively solved.

The invention discloses a bigrid planar nano air channel transistor, which comprises an insulating substrate, a cathode, an anode, a first grid close to the cathode and used for controlling cathode electron emission, and a second grid close to the anode and used for shielding the action of the anode on the cathode, a channel among the cathode, the anode, the first grid electrode and the second grid electrode is air in an atmospheric pressure or vacuum state; gaps within 1000 nanometers are respectively kept between the cathode and the first grid electrode, between the anode and the second grid electrode, between the first grid electrode and the second grid electrode, and between the cathode and the anode; when first grid voltage higher than field emission electrons formed by the cathode is applied to the first grid, the electrons emitted by the cathode move towards the anode under the combined action of the first grid voltage, the second grid voltage and the anode voltage and reach the anode to form anode current; by adopting the double-grid structure, the saturation characteristic of the output characteristic curve of the transistor is realized, the electron interception of the grid of the transistor is reduced, and the electron utilization efficiency is improved.

The utility model provides a grid electrode used for a vacuum electronic device, an electron gun and an X-ray tube, the grid electrode comprises a grid electrode substrate, the grid electrode substrate is a flat sheet, the thickness of the grid electrode substrate is 0.1 mm-3mm, and the thermal conductivity of the material of the grid electrode substrate is greater than 200W / (m.K); an electron beam through hole is formed in the gate substrate, the axial direction of the electron beam through hole is perpendicular to the two surfaces of the gate substrate in the thickness direction, and the electron beam through hole enables the gate substrate to be provided with a through hole part and an entity part except the through hole part; after the electron beam through hole is machined in the gate substrate, an outer wrapping layer is fixedly arranged on the surface of the entity part, the outer wrapping layer is made of a metal material, and the thickness of the outer wrapping layer is 10 nm to 50 [mu] m. According to the grid electrode, a large amount of heat generated when electron beams bombard the grid electrode can be conducted away, the high electron passing rate is still achieved under the low kV smaller than 5 kV, and the grid electrode is well suitable for field emission, heat emission, thermal field emission and other various cathode emission materials.

The invention provides a grid electrode used for a vacuum electronic device, an electron gun and an X-ray tube, the grid electrode comprises a grid electrode substrate, the grid electrode substrate is a flat plate type sheet, the thickness of the grid electrode substrate is 0.1 mm-3 mm, and the thermal conductivity of the material of the grid electrode substrate is larger than 200 W / (m.K); an electron beam through hole is formed in the gate substrate, the axial direction of the electron beam through hole is perpendicular to the two surfaces of the gate substrate in the thickness direction, and the electron beam through hole enables the gate substrate to be provided with a through hole part and an entity part except the through hole part; after the electron beam through hole is machined in the gate substrate, an outer wrapping layer is fixedly arranged on the surface of the entity part, the outer wrapping layer is made of a metal material, and the thickness of the outer wrapping layer is 10 nm to 50 [mu] m. According to the grid electrode, a large amount of heat generated when electron beams bombard the grid electrode can be conducted away, the high electron passing rate is still achieved under the low kV smaller than 5 kV, and the grid electrode is well suitable for field emission, heat emission, thermal field emission and other various cathode emission materials.

Embodiments of the present disclosure provide a vacuum transistor, an array substrate and an electronic device, and relate to the technical field of vacuum electronics, and are used for improving the control of the gate on the vacuum tunneling current and improving the on-off ratio of the vacuum transistor. The vacuum transistor comprises a substrate, a first electrode, a gate, a second electrode and a via hole. The first electrode, the gate and the second electrode are sequentially stacked on the substrate along a first direction and a direction gradually away from the substrate, and the first direction is the thickness direction of the substrate. The first electrode and the gate, and the gate and the second electrode are both spaced apart along the first direction. The via hole penetrates the second electrode and the film layer between the second electrode and the first electrode along the first direction, and exposes the side surface of the first electrode away from the substrate. The orthogonal projection of the gate on the substrate and the orthogonal projection of the second electrode on the substrate overlap.

The invention discloses a micro-nano vacuum triode based on a self-packaging vacuum channel and a semi-surrounding grid electrode. The triode comprises a substrate, a hyperbolic nanostructure and a semi-surrounding grid electrode, the hyperbolic nanostructure and the semi-surrounding grid electrode are arranged on the upper surface of the substrate, and the hyperbolic nanostructure penetrates through the semi-surrounding grid electrode; in the vertical direction of the substrate, the height of the semi-surrounding grid electrode is greater than that of the hyperbolic nanostructure; the hyperbolic nano structure comprises a nano micro-tip cathode, a nano micro-tip anode, a self-packaging oxide layer and a vacuum channel; the nanometer micro-tip cathode and the nanometer micro-tip anode are located on a first straight line, and a gap between the tip of the nanometer micro-tip cathode and the tip of the nanometer micro-tip anode is a vacuum channel; and the self-packaging oxide layer wraps the nano micro-tip cathode, the vacuum channel and the nano micro-tip anode. The triode has the characteristics of good grid control capability and no dependence on a high-vacuum-degree environment.

The present invention discloses an integrated vacuum electron tube device structure and a preparation method thereof. The device structure includes a substrate, a cathode, a first insulating layer, a first grid, a second insulating layer, a second grid, a third insulating layer, and an anode; the cathode is perpendicular to the surface of the substrate; the substrate, the first insulating layer, the first grid, the second insulating layer, the second grid, the third insulating layer, and the anode are stacked without gaps from bottom to top; the first grid is an electrode with crater-shaped micropores, the second grid is an electrode with crater-shaped micropores or a tiled electrode with micropores, the height difference between the top of the second grid and the top of the first grid is 200 nm to 1000 nm, and the pore diameter of the micropores of the second grid is larger than the pore diameter of the micropores of the first grid; the cathode is located at the center of the micropores of the first grid and the second grid; the potential of the second grid is set not lower than the potential of the first grid.