To greatly increase the storage density of a storage apparatus, an
electron beam E emitted from a
cold cathode 101 is accelerated by an accelerating
electrode 102, caused to converge by a convergence
electrode 103, deflected by a deflection
electrode 104 and applied to a minute region of a storage film 105. The storage film 105 includes, for example, a
phase change film 105a. The film is rapidly heated and cooled to change into an amorphous state upon
irradiation with an
electron beam E with
high energy, while being gradually cooled to change into a crystallized state upon
irradiation with an
electron beam E with approximately
intermediate energy, thereby storing data. Upon
irradiation with an electron beam E with low energy, the
potential difference between a detection electrode 105b and an
anode 105c is detected depending on the state, i.e., the amorphous or crystallized state, thereby reading stored data.