12results about "Non-electron-emitting anodes" patented technology

To provide an electron beam excitation type light-emitting element that can be easily mounted on a substrate such as a printed board, and a light irradiation device including the light-emitting element.SOLUTION: A light-emitting element 10 includes an electron beam source 11, and a light-emitting unit 21 including a light-emitting layer 21L excited by an electron beam of the electron beam source 11. The electron beam source 11 is mounted on a board 31, and an outline part 51 that surrounds the electron beam source 11 from above is disposed on an upper surface 31A of the substrate 31. The light-emitting unit 21 is disposed over the outline part 51. The space surrounded by the substrate 31, the outline part 51, and the light-emitting unit 21 is vacuum. The light-emitting unit 21 includes an anode electrode 41 to which the high voltage for accelerating the electron beam is applied. A cathode terminal TC and a gate terminal TG that electrically connect to the electron beam source 11, and an anode terminal TA that electrically connects to the anode electrode 41 are disposed planarly on a lower surface 31 of the substrate 31 so that the substrate 31 can be mounted planarly.SELECTED DRAWING: Figure 2

The application discloses a nano-channel transistor structure with an auxiliary anode and a driving method. The structure comprises an insulating substrate, a cathode, a gate and an anode which are made on the substrate, and at least one auxiliary anode is additionally arranged on the side of the anode away from the cathode. The auxiliary anode and the anode can have a height difference. By applying different direct-current voltages, a regulating electric field is formed between the anode and the auxiliary anode, the moving direction and speed of the electrons passing through the anode are changed, and the electrons are collected by the anode or directly collected by the auxiliary anode. The application also provides a corresponding driving method. The gate applies a direct-current bias voltage superimposed with a high-frequency modulation signal, and the anode and the auxiliary anode respectively apply direct-current voltages. The amplified high-frequency signals collected by the anode and / or the auxiliary anode are output through a capacitor, and the multi-output signals can be superimposed after the phase compensation system makes the phases of the multi-output signals consistent. The application effectively improves the utilization efficiency of the cathode emitted electrons and the total output current of the device.

The invention discloses a planar micro-nano vacuum diode based on a self-packaging vacuum channel. The diode comprises a substrate and a hyperbolic nanostructure, the hyperbolic nanostructure is arranged on the upper surface of the substrate, and the hyperbolic nanostructure comprises a nano micro-tip cathode, a nano micro-tip anode, a self-packaging oxide layer and a vacuum channel; the nanometer micro-tip cathode and the nanometer micro-tip anode are located on a first straight line, and a gap between the tip of the nanometer micro-tip cathode and the tip of the nanometer micro-tip anode is a vacuum channel; and the self-packaging oxide layer wraps the nano micro-tip cathode, the vacuum channel and the nano micro-tip anode. The diode has the characteristic that the diode does not depend on a high-vacuum-degree environment.

The invention provides a horizontal-vertical composite nano-channel device and a preparation method thereof, the nano-channel device comprises an insulating substrate, an emitter, a nano-channel and a collector, carriers are transported in the nano-channel between the emitter and the collector to obtain high response speed and working frequency, and the performance of the device is improved. The nano channel of the device is simultaneously composed of a horizontal channel and a vertical channel, the horizontal channel and the vertical channel can be a medium channel or an air channel, the channel configuration can realize sufficient collection of electrons emitted by the emitter by the collector, the preparation of the device does not need a nano photoetching process, and the device is simple in structure and convenient to operate. Wafer-level batch preparation of the nano-channel device can be realized through a nano-film deposition process and a side wall process, and the device is not only suitable for electronic devices, but also suitable for photoelectric devices.

The invention discloses a planar coaxial ring gate nano vacuum channel field emission triode device and method, and relates to the technical field of microelectronic devices and vacuum micro-nano electronics, and the device comprises an insulating substrate, a coaxial ring gate disposed on the insulating substrate, and a medium supporting region disposed around the gate. The emitting electrode and the collecting electrode are arranged on the supporting area and are coaxially arranged; a closed annular nano vacuum gap is formed between the inner edges and the outer edges of the two parts to form a transverse vacuum channel; the coaxial annular grid electrode is located in an annular area below the gap, and the coaxial annular grid electrode and the two electrodes are arranged at intervals in the vertical direction and the plane direction. Through the coaxial ring gates, the electric field modulation uniformity is enhanced, gate interception and local hot spots are suppressed, parasitic capacitance is reduced, and transconductance and GHz-level high-frequency response are improved.

The invention discloses a micro-nano vacuum triode and a saturation output method and a preparation method thereof, and relates to the technical field of vacuum micro-nano triodes, and the saturation output method comprises the steps: arranging a crater-shaped micropore grid electrode, enabling the top end of the grid electrode to be higher than the top end of a cathode, weakening the influence of an anode electric field on a cathode surface barrier, and improving the stability of the cathode surface barrier; the saturation output characteristic that the cathode emission current does not change along with the anode voltage is obtained; the emitter with the nanoscale tip curvature radius serves as a cathode, the central axis of the tip of the cathode and the central axis of the crater-shaped micropore grid electrode and the central axis of the micropore anode are located on the same straight line, and the tip curvature radius of the cathode is set to be 0.2-15 nm; and the divergence angle of the emergent electrons at the emitting end of the cathode is within the range that the emergent electrons can pass through the grid micropores and are collected by the anode, so that the current ratio of the anode to the cathode is improved. The problem that the saturation output characteristic of an existing micro-nano vacuum triode is difficult to be compatible with the high anode and cathode current ratio due to the fact that the distance between the cathode and the anode is small is effectively solved.

The invention provides a fin-type structure array nano air channel diode, which comprises an insulating substrate, a fin-type structure cathode, a nano air channel, a fin-type structure anode and a metal support column, and is characterized in that a tip structure and surface nano structure modification are designed on the fin-type structure cathode, so that efficient field emission of electrons can be realized, and meanwhile, the field emission efficiency is improved. The fin-type structure cathode is fully surrounded by the fin-type structure anode, high-efficiency field emission electron collection is realized, and the diode with large field emission current is realized through the arrayed fin-type structure cathode and anode. According to the fin-type structure array nano air channel diode, high-speed response and ultra-large bandwidth can be obtained by utilizing the ballistic transport characteristic of electrons in a nano air channel, when the fin-type structure array nano air channel diode is used as a photodiode, light absorption can be enhanced by designing the size and periodic distribution of a fin-type structure cathode, high quantum efficiency is obtained, and the quantum efficiency is improved. And meanwhile, high-power and high-bandwidth millimeter wave / terahertz signals can be generated, and high-response and high-sensitivity photoelectric detection can be realized.

A solid-state vacuum triode comprises a substrate, two sides of the top of the substrate are respectively provided with an anode and a cathode, the top of the anode is provided with an anode contact layer in ohmic contact with the anode, the top of the cathode is provided with a cathode contact layer in ohmic contact with the cathode, and a dielectric layer is arranged between the anode contact layer and the cathode contact layer. A groove body is formed in the top surface of the dielectric layer, the groove body is communicated with or not communicated with the vacuum area, and a grid is arranged in the groove body; glass packaging outside a vacuum area of a traditional vacuum triode is replaced with solid materials, the defects that the glass packaging of the traditional vacuum triode is poor in reliability and cannot be miniaturized are overcome, meanwhile, a carrier transport area of a traditional all-solid-state semiconductor triode is vacuumized, the problem that the carrier movement of a solid-state triode is scattered, and the reliability of the solid-state triode is improved is solved. According to the solid-state triode, the unlimited movement of current carriers is combined with the miniaturization of a solid-state structure, so that the conversion power and the working efficiency of a traditional solid-state triode are improved.

A solid-state vacuum diode comprises a substrate, two sides of the top of the substrate are respectively provided with an anode and a cathode, the top of the anode is provided with an anode contact layer in ohmic contact with the anode, the top of the cathode is provided with a cathode contact layer in ohmic contact with the cathode, and a dielectric layer is arranged between the anode contact layer and the cathode contact layer. A vacuum area is enclosed among the substrate, the anode, the cathode and the dielectric layer, or a vacuum area is enclosed among the substrate, the anode, the cathode, the dielectric layer, the anode contact layer and the cathode contact layer; glass packaging outside a vacuum area of a traditional vacuum diode is replaced with solid materials, the defects that glass packaging of the traditional vacuum diode is poor in reliability and cannot be miniaturized are overcome, meanwhile, a carrier transport area of a traditional all-solid-state semiconductor diode is vacuumized, and the problem that the carrier movement of a solid-state diode is scattered, so that microminiaturization cannot be achieved is solved. According to the solid-state diode, the unlimited movement of current carriers is combined with the microminiaturization of a solid-state structure, so that the conversion power of the solid-state diode is improved.

The application discloses a pulse discharge device, which comprises a driving source, a load assembly and a box body, the box body is internally provided with a containing space, the driving source and the load assembly are arranged in the containing space, and the driving source is in wiring connection with the load assembly; the driving source comprises a plurality of transformer modules arranged in parallel, each transformer module comprises two series-connected capacitors, and the plurality of transformer modules are arranged in a rectangular array in a plane. The pulse discharge device can realize relatively compact arrangement of the transformer modules due to the rectangular array arrangement of the plurality of transformer modules in the plane, and can limit the overall size of the pulse discharge device in a smaller space on the basis of not changing the circuit, so that the pulse discharge device has a small floor area.

The invention discloses a micro-nano vacuum triode based on a self-packaging vacuum channel and a semi-surrounding grid electrode. The triode comprises a substrate, a hyperbolic nanostructure and a semi-surrounding grid electrode, the hyperbolic nanostructure and the semi-surrounding grid electrode are arranged on the upper surface of the substrate, and the hyperbolic nanostructure penetrates through the semi-surrounding grid electrode; in the vertical direction of the substrate, the height of the semi-surrounding grid electrode is greater than that of the hyperbolic nanostructure; the hyperbolic nano structure comprises a nano micro-tip cathode, a nano micro-tip anode, a self-packaging oxide layer and a vacuum channel; the nanometer micro-tip cathode and the nanometer micro-tip anode are located on a first straight line, and a gap between the tip of the nanometer micro-tip cathode and the tip of the nanometer micro-tip anode is a vacuum channel; and the self-packaging oxide layer wraps the nano micro-tip cathode, the vacuum channel and the nano micro-tip anode. The triode has the characteristics of good grid control capability and no dependence on a high-vacuum-degree environment.

A double-layer anode structure high-current diode for radiation field focusing and a use method thereof, comprising a ring-shaped cathode plate, an outer-layer anode ring-shaped plate, an inner-layer anode ring-shaped plate and an anode target surface; the side surface of the inner-layer anode ring-shaped plate is provided with the anode target surface side by side, the ring-shaped cathode plate is sleeved outside the inner-layer anode ring-shaped plate and the anode target surface, and a first cavity is formed between the inner-layer anode ring-shaped plate and the anode target surface; the outer-layer anode ring-shaped plate is sleeved outside the ring-shaped cathode plate, and a second cavity is formed between the outer-layer anode ring-shaped plate and the ring-shaped cathode plate; the first cavity and the second cavity are communicated at the anode target surface. Through the design of the double-layer anode structure (the inner-layer anode ring-shaped plate and the outer-layer anode ring-shaped plate), the flow and focusing of the electron beam can be more effectively controlled. This structure helps to maintain the shape stability of the ring-shaped electron beam and reduces the diffusion and defocusing of the electron beam in the transmission process.