5results about "Non-electron-emitting anodes" patented technology

The application discloses a nano-channel transistor structure with an auxiliary anode and a driving method. The structure comprises an insulating substrate, a cathode, a gate and an anode which are made on the substrate, and at least one auxiliary anode is additionally arranged on the side of the anode away from the cathode. The auxiliary anode and the anode can have a height difference. By applying different direct-current voltages, a regulating electric field is formed between the anode and the auxiliary anode, the moving direction and speed of the electrons passing through the anode are changed, and the electrons are collected by the anode or directly collected by the auxiliary anode. The application also provides a corresponding driving method. The gate applies a direct-current bias voltage superimposed with a high-frequency modulation signal, and the anode and the auxiliary anode respectively apply direct-current voltages. The amplified high-frequency signals collected by the anode and / or the auxiliary anode are output through a capacitor, and the multi-output signals can be superimposed after the phase compensation system makes the phases of the multi-output signals consistent. The application effectively improves the utilization efficiency of the cathode emitted electrons and the total output current of the device.

The invention discloses a planar coaxial ring gate nano vacuum channel field emission triode device and method, and relates to the technical field of microelectronic devices and vacuum micro-nano electronics, and the device comprises an insulating substrate, a coaxial ring gate disposed on the insulating substrate, and a medium supporting region disposed around the gate. The emitting electrode and the collecting electrode are arranged on the supporting area and are coaxially arranged; a closed annular nano vacuum gap is formed between the inner edges and the outer edges of the two parts to form a transverse vacuum channel; the coaxial annular grid electrode is located in an annular area below the gap, and the coaxial annular grid electrode and the two electrodes are arranged at intervals in the vertical direction and the plane direction. Through the coaxial ring gates, the electric field modulation uniformity is enhanced, gate interception and local hot spots are suppressed, parasitic capacitance is reduced, and transconductance and GHz-level high-frequency response are improved.

A solid-state vacuum triode comprises a substrate, two sides of the top of the substrate are respectively provided with an anode and a cathode, the top of the anode is provided with an anode contact layer in ohmic contact with the anode, the top of the cathode is provided with a cathode contact layer in ohmic contact with the cathode, and a dielectric layer is arranged between the anode contact layer and the cathode contact layer. A groove body is formed in the top surface of the dielectric layer, the groove body is communicated with or not communicated with the vacuum area, and a grid is arranged in the groove body; glass packaging outside a vacuum area of a traditional vacuum triode is replaced with solid materials, the defects that the glass packaging of the traditional vacuum triode is poor in reliability and cannot be miniaturized are overcome, meanwhile, a carrier transport area of a traditional all-solid-state semiconductor triode is vacuumized, the problem that the carrier movement of a solid-state triode is scattered, and the reliability of the solid-state triode is improved is solved. According to the solid-state triode, the unlimited movement of current carriers is combined with the miniaturization of a solid-state structure, so that the conversion power and the working efficiency of a traditional solid-state triode are improved.

A solid-state vacuum diode comprises a substrate, two sides of the top of the substrate are respectively provided with an anode and a cathode, the top of the anode is provided with an anode contact layer in ohmic contact with the anode, the top of the cathode is provided with a cathode contact layer in ohmic contact with the cathode, and a dielectric layer is arranged between the anode contact layer and the cathode contact layer. A vacuum area is enclosed among the substrate, the anode, the cathode and the dielectric layer, or a vacuum area is enclosed among the substrate, the anode, the cathode, the dielectric layer, the anode contact layer and the cathode contact layer; glass packaging outside a vacuum area of a traditional vacuum diode is replaced with solid materials, the defects that glass packaging of the traditional vacuum diode is poor in reliability and cannot be miniaturized are overcome, meanwhile, a carrier transport area of a traditional all-solid-state semiconductor diode is vacuumized, and the problem that the carrier movement of a solid-state diode is scattered, so that microminiaturization cannot be achieved is solved. According to the solid-state diode, the unlimited movement of current carriers is combined with the microminiaturization of a solid-state structure, so that the conversion power of the solid-state diode is improved.

The application discloses a pulse discharge device, which comprises a driving source, a load assembly and a box body, the box body is internally provided with a containing space, the driving source and the load assembly are arranged in the containing space, and the driving source is in wiring connection with the load assembly; the driving source comprises a plurality of transformer modules arranged in parallel, each transformer module comprises two series-connected capacitors, and the plurality of transformer modules are arranged in a rectangular array in a plane. The pulse discharge device can realize relatively compact arrangement of the transformer modules due to the rectangular array arrangement of the plurality of transformer modules in the plane, and can limit the overall size of the pulse discharge device in a smaller space on the basis of not changing the circuit, so that the pulse discharge device has a small floor area.