42results about "Non-electron-emitting anodes" patented technology

To greatly increase the storage density of a storage apparatus, an electron beam E emitted from a cold cathode 101 is accelerated by an accelerating electrode 102, caused to converge by a convergence electrode 103, deflected by a deflection electrode 104 and applied to a minute region of a storage film 105. The storage film 105 includes, for example, a phase change film 105a. The film is rapidly heated and cooled to change into an amorphous state upon irradiation with an electron beam E with high energy, while being gradually cooled to change into a crystallized state upon irradiation with an electron beam E with approximately intermediate energy, thereby storing data. Upon irradiation with an electron beam E with low energy, the potential difference between a detection electrode 105b and an anode 105c is detected depending on the state, i.e., the amorphous or crystallized state, thereby reading stored data.

Provided is a nanometer vacuum triode structure with a flip-chip-type anode, comprising a substrate; an aluminum nitride film cathode growing on the front side of the substrate; a metal electrode manufactured on the back of the substrate, wherein the substrate, the aluminum nitride film cathode and the metal electrode form a cathode; a glass substrate; a transparent conducting layer manufactured on the glass substrate; a first insulating layer manufactured on the transparent conducting layer, wherein the intermediate part is a window; a metal gate manufactured on the first insulating layer, wherein the intermediate part is a window; and a second insulating layer manufactured on the metal gate, wherein the intermediate part is a window, and the glass substrate, the transparent conducting layer, the first insulating layer, the metal gate and the second insulating layer form an anode. The second insulating layer of the cathode and the aluminum nitride film cathode of the cathode are in buckled connection to form a nanometer vacuum triode structure with a flip-chip-type anode. The nanometer vacuum triode structure with a flip-chip-type anode overcomes deficiencies of a present nanometer vacuum triode structure, and can avoid cathode oxidation, improve the electronic collection capability of the anode, and facilitate flip-chip integration.

Disclosed is an encapsulated micro-diode and a method for producing same. The method comprises forming a plurality columns in the substrate with a respective tip disposed at a first end of the column, the tip defining a cathode of the diode; disposing a sacrificial oxide layer on the substrate, plurality of columns and respective tips; forming respective trenches in the sacrificial oxide layer around the columns; forming an opening in the sacrificial oxide layer to expose a portion of the tips; depositing a conductive material in of the opening and on a surface of the substrate to form an anode of the diode; and removing the sacrificial oxide layer.

The invention discloses a vertical type nano gap vacuum transistor with an extended gate structure and a preparation method thereof. The vertical type nano gap vacuum transistor includes an emitter, acollector, a gate and an oxide insulating layer, and the nano gap refers to distances between the collector and the emitter and between the gate and the emitter in a sub-100 nm scale. The vertical type nano gap vacuum transistor is advantaged in that dimensions of vacuum devices are compressed to the sub-100 nm scale, device processing requirements are similar to traditional semiconductor processes, a problem that traditional electric vacuum devices require complex machining and assembling is ameliorated, more importantly, and the possibility of realizing miniaturization and integration of vacuum components, integrated circuits and vacuum electronic systems in the future is provided.

A high dose output, through transmission target X-ray tube and methods of use includes, in general an X-ray tube for accelerating electrons under a high voltage potential having an evacuated high voltage housing, a hemispherical shaped through transmission target anode disposed in said housing, a cathode structure to deflect the electrons toward the hemispherical anode disposed in said housing, a filament located in the geometric center of the anode hemisphere disposed in said housing, a power supply connected to said cathode to provide accelerating voltage to the electrons.

First anode is connected to one end of ceramic insulation sect module. The other end of the ceramic insulation sect module is connected to a terminal port of a transition sect module, which is connected to second anode. First anode seat is installed on the first anode, and a featheredge area as a soldering edge is setup at tail part of the first anode. There is a lamellar soldering edge between same terminal ports of first anode seat and the tail part of the first anode. Assembling procedure includes steps: inserting die in to second anode; placing the transition sect module, the ceramic insulation sect module, first anode, and first anode seat; inner diameter of first anode head sheathed on up end of the die; being placed to first anode, tool bar impresses force downward; then, soldering two modules, first anode, and first anode seat as integrated module; taking die out and replacing second anode back to original position; soldering second anode and transition sect module.

One or more embodiments of the invention concern a device comprising: a cathode that lies on a cathode plane and includes, in an active region one or more cathode straight-finger-shaped terminals with a main extension direction parallel to a first reference direction; for each cathode terminal, one or more electron emitters formed on, and in ohmic contact with, said cathode terminal; and a gate electrode that lies on a gate plane parallel to, and spaced apart from, said cathode plane, does not overlap the cathode and includes, in the active region, two or more gate straight-finger-shaped terminals with a main extension direction parallel to the first reference direction; wherein the gate terminals are interlaced with said cathode terminal(s).

The invention discloses a planar/vertical vacuum field effect transistor (VFT) structure, which adopts a planar or vertical structure similar to a MOSFET to improve integration and can operate at a lower operating voltage at high speed. This planar type VFT includes source and drain electrodes made of conductors, which are kept on a thin channel insulator with a predetermined distance apart, with a vacuum channel in between; gate electrodes made of conductors, which have a certain The width is formed under the source and the drain, and the function of the channel insulator is to insulate the gate from the source and the drain; the insulating body is used as a substrate for supporting the channel insulator and the gate. A vertical vacuum field effect transistor comprising: a conductive continuous circular source having a vacant center formed on a trench insulator; a conductive continuous source formed under said trench insulator and extending across said source a gate; an insulating body serving as a substrate supporting the gate and a channel insulator; an insulating wall mounted above the source to form a closed vacuum channel; a drain formed above the vacuum channel . In both types an appropriate bias is applied between the gate, source and drain to enable electrons to be field emitted from the source to the drain through the vacuum channel.

A field emission lamp and method of fabricating the same are disclosed, the field emission lamp of the present invention comprising a lamp tube, an anode, at least one auxiliary electrode, a cathode, and an emitter layer. The anode comprises a transparent conductive layer and a phosphor layer, and the transparent conductive layer is made of ITO, IZO, AZO, GZO, zinc oxide, or the combination thereof. The auxiliary electrode of the field emission lamp of the present invention can shorten the electron transportation path length, increase the electron transportation efficiency, reduce the phenomenon of micro-discharges caused by electron charging, reduce the voltage loss, reduce the temperature increase of the phosphor layer and elongate the lifetime of the field emission lamp.

The vacuum tube subject to the present invention comprises a filament and two pairs of a grid and an anode. The filament is tensioned linearly and emitting thermoelectrons. Both of the anodes are formed on the same face on a planar substrate. The filament is arranged parallel to the planar substrate at a position facing both of the anodes. Each of the grids is arranged, such that the grid faces the anode in the same pair at a first predetermined distance from the anode and has a second predetermined distance from the filament, between the anode and the filament. The vacuum tube comprises an intermediate filament fixing part fixing the filament at a position corresponding to an intermediate point between the anodes of the two pairs.

The invention discloses a dissymmetrical radiator under compelling convection. It uses the feature that the temperature field is dissymmetrical while compelling convection. Cutting off a certain wideness of the main fan in existence at the wind entrance, and keep the original size at the wind exit. Thus, the magnetron anode is in the dissymmetrical location relative to the main fan. It is easy to produce and need not to change the product line and process. The invention can not only used for magnetron heat emission, but also used as the other radiator under compelling convection.

A LUWPL luminaire has a housing with a lower transparent closure and a heat dissipating top of cast aluminum. This has a suspension eye. The housing has an upper flange via which it is bolted with the interposition of a seal to a underside rim of the top. Within the rim, the underside is substantially flat, with a magnetron attachment boss and other attachment points. A magnetron is supported by being clamped by a saddle to the attachment boss at the magnetron's anode. The magnetron is fast with a transition box and a crucible support block. A bracket fixed to certain of the attachment points extends down from the top is screwed to the transition box. Thus the LUWPL parts are securely supported below the top.

A flat panel UV source emits UV flux from one or more phosphor materials disposed on an anode plate and excited by electron beam current accelerated in vacuum toward the anode from one or more arrays of thermionic filament cathodes. The filament cathode arrays may be constructed and held in one or more cathode frames attached to or near a cathode plate. Increasing the number of these frames allows scaling of the areal size of the source, since the frames are constructed so as to allow for sag of the filaments as they are heated and cooled during operation.

The present invention relates to an electron tube having a configuration which can maintain its operating stability for a long period of time. The electron tube comprises, at least, a field emitter which is made of diamond or a material mainly composed of diamond and has a surface terminated with hydrogen, and a sealed envelope for accommodating the diamond field emitter. Due to the hydrogen termination, the electron affinity of the diamond field emitter is set to a negative state. Also, hydrogen is enclosed within the sealed envelope. Due to this configuration, the hydrogen-terminated state of the diamond field emitter surface is stabilized, and the electron affinity of the diamond emitter is restrained from changing for a long period of time.

An object of the present invention is to provide a vacuum tube with a structure close to that of an inexpensive and easily available vacuum fluorescent display which easily operates as an analog amplifier. A vacuum tube subject to the present invention comprises: a filament which is tensioned linearly and emits thermoelectrons, an anode arranged parallel to the filament, and a grid arranged between the filament and the anode such that the grid faces the anode. The present invention is characterized in that a distance between the filament and the grid is between 0.2 mm and 0.6 mm, including 0.2 mm and 0.6 mm.

The invention relates to an audio electronic tube, in particular to an anode of an audio electronic tube. The anode is a hollow anode 3 compounded by two arch half anodes 1 and 2 made of two different materials, wherein the arch half anode 1 is an iron nickel alloy reticular arch half anode, and the arch half anode 2 is a graphite arch half anode. The utility model has the advantages that the anode of the utility model is adopted as the anode of the audio electronic tube, and thus the tones of the high, middle, and low audio frequencies of the audio electronic tube are better and more satisfactory than the tone of the prior audio electronic tube.

The invention provides an audio electronic tube with a composite anode, comprising a glass tube shell, an anode, a cathode, a grid, a core column, an upper and lower spacer plates, a top sheet, a leadwire, a degassing agent ring, and a tube base of a lower part of the glass tube shell, wherein the anode molybdenum net and graphite are superposed to form a composite anode. The invention has simplestructure and good sound performance.

Embodiments of the invention disclose a terahertz vacuum diode and a manufacturing method thereof. The terahertz vacuum diode includes a photocathode, a vacuum channel layer and an anode; the vacuum channel layer is provided with a vacuum channel; the vacuum channel penetrates the vacuum channel layer; the photocathode and the anode are arranged on the two ends of the vacuum channel; sealing cavities are formed between the photocathode, the vacuum channel layer and the anode; the vacuum channel is in a circular truncated cone shape; and the contact area of the photocathode and the vacuum channel is less than that of the anode and the vacuum channel. A novel terahertz vacuum electronic device can be provided through the provided terahertz vacuum diode and the manufacturing method thereof.