Vertical type nano gap vacuum transistor with extended gate structure and preparation method thereof

A gate structure, vertical technology, applied in the field of vertical nano-gap vacuum transistors and its preparation, can solve the problems of miniaturization, light weight and integration, bulky and bloated vacuum electronic systems, etc., and improve emission efficiency And the effects of current density, enhanced surface electric field strength, and reduced gate leakage current

Inactive Publication Date: 2019-10-08
SOUTHEAST UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, limited by complex mechanical processing and other reasons, traditional vacuum electronic systems

Method used

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  • Vertical type nano gap vacuum transistor with extended gate structure and preparation method thereof
  • Vertical type nano gap vacuum transistor with extended gate structure and preparation method thereof
  • Vertical type nano gap vacuum transistor with extended gate structure and preparation method thereof

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Embodiment 1

[0047] figure 2 It is a schematic cross-sectional view of an extended gate structure in the present invention, including a back gate 1 , an emitter 2 , an extended gate 3 , a collector 4 and oxide insulating substrates 5 , 6 and 7 . The oxide substrate 5 is arranged between the back gate 1 and the emitter 2, the oxide substrate 6 is arranged between the emitter 2 and the extension gate 3, and the oxide substrate 7 is arranged on the extension Both the gate 3 and the collector 4 are used to isolate the leakage current between the electrodes; the distance between the emitter 2 and the collector 4 is on the scale of sub-100 nanometers.

Embodiment 2

[0049] image 3 It is a schematic cross-sectional view of a T-shaped extended gate structure in the present invention, increasing the area opposite the gate to the emitter, thereby effectively increasing the electric field intensity on the surface of the emitter, and improving the electron emission capability and current density of the device. It includes a back gate 1, an emitter 2, a T-shaped extended gate 3, a collector 4 and oxide insulating substrates 5, 6 and 7. The oxide substrate 5 is arranged between the back gate 1 and the emitter 2, the oxide substrate 6 is arranged between the emitter 2 and the T-shaped extended gate 3, and the oxide substrate 7 is arranged Between the T-shaped extended gate 3 and the collector 4, both are used to isolate the leakage current between the electrodes; the distance between the emitter 2 and the collector 4 is on the scale of sub-100 nanometers.

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Abstract

The invention discloses a vertical type nano gap vacuum transistor with an extended gate structure and a preparation method thereof. The vertical type nano gap vacuum transistor includes an emitter, acollector, a gate and an oxide insulating layer, and the nano gap refers to distances between the collector and the emitter and between the gate and the emitter in a sub-100 nm scale. The vertical type nano gap vacuum transistor is advantaged in that dimensions of vacuum devices are compressed to the sub-100 nm scale, device processing requirements are similar to traditional semiconductor processes, a problem that traditional electric vacuum devices require complex machining and assembling is ameliorated, more importantly, and the possibility of realizing miniaturization and integration of vacuum components, integrated circuits and vacuum electronic systems in the future is provided.

Description

technical field [0001] The invention relates to a vertical nano-gap vacuum transistor with an extended gate structure and a preparation method thereof, belonging to the fields of novel micro-nano structures and vacuum nano-electronic devices. Background technique [0002] Vacuum electronic devices have technical advantages such as high power, wide frequency bandwidth and high frequency, and are widely used in technical fields such as communication, radar, navigation and imaging. However, limited by complex machining and other reasons, traditional vacuum electronic systems are often bulky and bloated, making it difficult to achieve miniaturization, light weight and integration. The development of nanotechnology, whether it is advanced processing technology or the emergence of new nanomaterials, provides the possibility to break through the bottleneck of traditional vacuum electronic devices. In recent years, the emergence of nanogap structures has injected new vitality into ...

Claims

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Application Information

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IPC IPC(8): H01J19/02H01J19/32H01J19/38H01J9/00H01J9/02H01J9/14
CPCH01J9/00H01J9/02H01J9/148H01J19/02H01J19/32H01J19/38
Inventor 徐季张晓兵张建王琦龙杨文鑫
Owner SOUTHEAST UNIV
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