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Array type terahertz vacuum diode device and manufacturing method thereof

A vacuum diode, terahertz technology, used in the field of optoelectronics

Inactive Publication Date: 2019-05-24
BEIHANG UNIV +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the bottleneck in the development of miniaturized, high-power, and broadband continuous-wave terahertz radiation sources lies in the fact that the frequency band involved is just in the transition zone from macroelectronics to microphotonics, because of its physical mechanism and technical limitations. There are many problems in the research and development of radiation generation and detection devices

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  • Array type terahertz vacuum diode device and manufacturing method thereof
  • Array type terahertz vacuum diode device and manufacturing method thereof
  • Array type terahertz vacuum diode device and manufacturing method thereof

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Embodiment Construction

[0040] In order to make the purpose, technical solutions and advantages of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the present invention Examples, not all examples. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0041] The exploration and research of terahertz spectrum resources and the development and application of terahertz science and technology have always been restricted by the performance of terahertz sources and detectors. Vacuum electronics has been an important technological route to provide high power sources. Vacuum microelectronic devices can enable electrons to achieve bal...

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Abstract

The embodiments of the present invention disclose an array type terahertz vacuum diode device and a manufacturing method thereof. The array type terahertz vacuum diode device comprises a substrate anda plurality of terahertz vacuum diodes; the plurality of terahertz vacuum diodes are arranged in an array on the substrate; each of the terahertz vacuum diodes comprises a photocathode, a vacuum channel layer and an anode; the vacuum channel layer is provided with a vacuum channel; the vacuum channel extends through the vacuum channel layer; the photocathode and the anode are disposed at two endsof the vacuum channel respectively; a sealed cavity is formed among the photocathode, the vacuum channel layer and the anode; the vacuum channel is in the shape of a circular truncated cone; and thecontact area of the photocathode and the vacuum channel is smaller than the contact area of the anode and the vacuum channel. The array type terahertz vacuum diode device provided by the embodiments of the present invention is a novel terahertz vacuum electronic device.

Description

technical field [0001] The embodiment of the present invention relates to the field of optoelectronic technology, in particular to an array type terahertz vacuum diode device and a manufacturing method thereof. Background technique [0002] The frequency range of terahertz (THz) electromagnetic wave is 0.1-10THz, and the wavelength range is 0.03-3mm. It is an electromagnetic wave between microwave, millimeter wave and infrared. Terahertz electromagnetic waves are just in the frequency domain of the transition from macroelectronics to microphotonics, because of their high frequency, wide frequency bandwidth, good coherence, strong anti-interference, good penetration ability, easy anti-stealth, and low photon energy, etc. A series of excellent technical characteristics make national defense weapons and equipment, applied electronic systems and scientific detection instruments located in these frequency bands in high-transmission rate data transmission, large-capacity channel c...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J21/20H01J21/04H01J19/54H01J9/12
Inventor 阮存军戴军徐向晏刘虎林丁一坤
Owner BEIHANG UNIV
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