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Manufacture method of HV LED (high voltage light emitting diode) of stereoscopic light emitting structure

A technology of light-emitting diodes and light-emitting structures, which is applied in the direction of electric solid-state devices, semiconductor devices, electrical components, etc., and can solve the problems of packaging cost reduction and other issues

Active Publication Date: 2015-07-01
XIAMEN CHANGELIGHT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, the luminous power of the prior art high-voltage light-emitting diodes needs to be further improved, and at the same time, the packaging cost needs to be further reduced.

Method used

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  • Manufacture method of HV LED (high voltage light emitting diode) of stereoscopic light emitting structure
  • Manufacture method of HV LED (high voltage light emitting diode) of stereoscopic light emitting structure
  • Manufacture method of HV LED (high voltage light emitting diode) of stereoscopic light emitting structure

Examples

Experimental program
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Effect test

Embodiment 1

[0124] A high-voltage light-emitting diode with a three-dimensional light-emitting structure, which is composed of seven sub-level light-emitting diodes with independent light-emitting structures connected in series. Each sub-level light-emitting diode in series is divided into two layers, and the bottom layer is composed of four bottom sub-level light-emitting diodes. The top layer consists of three top sub-level LEDs, as Figure 8 shown.

[0125] Each of the sub-level light emitting diodes includes an independent active layer 4 , the first type conductive layer 3 is arranged on the first contact surface of the active layer 4 , and the second type conductive layer 5 is arranged on the second contact surface of the active layer 4 . The first-type conductive layer 3 is made of Si-doped GaN III-V compound, and has a thickness of 2 μm. The active layer 4 adopts a cross-growth structure of 6 pairs of quantum wells and quantum barriers. The quantum barrier is made of GaN III-V co...

Embodiment 2

[0151] A high-voltage light-emitting diode with a three-dimensional light-emitting structure, which is composed of nine sub-level light-emitting diodes with independent light-emitting structures connected in series. Each sub-level light-emitting diode in series is divided into two layers, and the bottom layer is composed of five bottom sub-level light-emitting diodes. The top layer consists of four top sub-level LEDs as Figure 22 shown.

[0152] Each of the sub-level light emitting diodes includes an independent active layer 4 , the first type conductive layer 3 is arranged on the first contact surface of the active layer 4 , and the second type conductive layer 5 is arranged on the second contact surface of the active layer 4 . The first-type conductive layer 3 is composed of a first-type current spreading layer and a first-type confinement layer. Specifically, the first type of current spreading layer consists of (Al 0.4 Ga 0.6 ) 0.5 In 0.5 Composed of P-three and five...

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Abstract

The invention discloses a manufacture method of an HV LED (high voltage light emitting diode) of a stereoscopic light emitting structure. The HV LED manufactured through the manufacture method is composed of at least two layers of sublevel LEDs which are bonded in staggered mode, wherein the number of the sublevel LEDs on one layer is n+1, the layer with the n+1 sublevel LEDs is used as a bottom layer, all the sublevel LEDs on the bottom layer are located on one plane, the number of the sublevel LEDs on the other layer is n, the layer with the n sublevel LEDs is used as a top layer, all the sublevel LEDs on the top layer are located on the other plane, each two adjacent sublevel LEDs respectively located on the bottom layer and the top layer are arranged on the two different planes, all the sublevel LEDs are provided with independent light emitting structures, and all the sublevel LEDs are connected in series. According to the manufacture method of the HV LED of the stereoscopic light emitting structure, all the sublevel LEDs are connected in series, the stereoscopic light emitting structure composed of the at least two layers is formed, light emitting efficiency per unit area is obviously increased, the area of a high voltage chip module having the same voltage as an existing high voltage chip module is nearly reduced to one half of the area of the existing high voltage chip module, and packaging cost of the high voltage chip module is effectively reduced.

Description

technical field [0001] The invention relates to the technical field of light-emitting diodes, in particular to a method for manufacturing a high-voltage light-emitting diode with a three-dimensional light-emitting structure. Background technique [0002] Light-emitting diodes have the advantages of low power consumption, small size and high reliability, and have been rapidly developed as the main light source. In recent years, the field of utilization of light-emitting diodes is expanding rapidly, and improving the brightness of light-emitting diodes and reducing the cost of light-emitting diodes has become the technical goal of LED development. [0003] High-voltage light-emitting diodes (HV-LEDs) can significantly reduce the cost of light-emitting diodes. HV-LEDs have two advantages: first, effectively reduce the cost and weight of LED lighting fixtures, and second, greatly reduce the design requirements for heat dissipation systems , to solve the technical barriers of he...

Claims

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Application Information

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IPC IPC(8): H01L27/15H01L33/38H01L33/62
Inventor 林志伟陈凯轩张永卓祥景姜伟方天足张银桥
Owner XIAMEN CHANGELIGHT CO LTD
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