Monolithic integrated white light diode

A monolithic integration and diode technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., to achieve the effects of improving luminous efficiency and luminous power, increasing power ratio, improving chromaticity quality and color rendering index

Inactive Publication Date: 2007-03-21
HUAZHONG UNIV OF SCI & TECH
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0005] The technical problem to be solved by the present invention is to provide a monolithic integrated white light diode, which can not only eliminate the adverse effect of too small long-wavelength light power on the color of white light, but also solve the problem that short-wavelength photons are absorbed by long-wavelength light-emitting regions , with good white light quality, high color rendering index and high luminous efficiency

Method used

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  • Monolithic integrated white light diode

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Embodiment Construction

[0013] The present invention will be further described below in conjunction with the embodiments and accompanying drawings.

[0014] The monolithic integrated white light LED provided by the present invention is provided with a photonic crystal layer 6 and two optical feedback cavities.

[0015] The specific structure of monolithic integrated white light LED is shown in the figure: P-type electrodes 12 and N-type electrodes 13 are arranged on the surface, and distributed Bragg reflectors 14, substrate 1, buffer layer 2, First lower cladding layer 3, first active region 4, first upper cladding layer 5, photonic crystal layer 6, second lower cladding layer 7, second active region 8, second upper cladding layer 9, P-type cladding layer Layer 10, P-type ohmic contact layer 11. Among the two optical feedback cavities, the first optical feedback cavity 17 is composed of a distributed Bragg reflector 14 and the upper surface of a monolithic integrated white LED, and the light emitte...

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Abstract

This invention relates to a single-chip integrated white light LED with type-P electrode and type-N electrode on the surface, a distributive Bragg reflector, a substrate, a buffer layer, a first cladding, a first active region, a first upper cladding, a photon crystal layer, a second lower cladding, a second active region, a second upper cladding, a P type cladding and a P type ohm contact layer are set upwards from the bottom in it, in which, a first optical feedback cavity is composed of the distributive Bragg reflector and the top surface of the single-chip integrated white light LED, a second cavity is composed of the photon crystal layer and the top surface of the single-chip integrated white LED, lights emitted by the two active regions are compensated mutually, so it can emit white light directly not needing light conversion of fluorescent powder.

Description

technical field [0001] The invention relates to a monolithic integrated white light emitting diode with high light color quality and high luminous efficiency. Background technique [0002] The semiconductor lighting source based on white light-emitting diode (LED) has the advantages of high efficiency, energy saving, and environmental protection. It is expected to become a new generation of electric light source and enter thousands of households, and has a very attractive application prospect. At present, the realization of semiconductor white light source mainly focuses on three methods: the first is red, green and blue LED mixed packaging to obtain white light, which must have a complex drive circuit and feedback control system; the second is to paint on the blue LED chip Apply yellow light phosphor, the blue light excites the phosphor to emit yellow light, and the blue light and yellow light mix to obtain white light; the third is to coat the three-color phosphor on the u...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/10
Inventor 黄黎蓉刘德明文锋陆奎马磊
Owner HUAZHONG UNIV OF SCI & TECH
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