Monolithic integrated white light diode

Abstract

This invention relates to a single-chip integrated white light LED with type-P electrode and type-N electrode on the surface, a distributive Bragg reflector, a substrate, a buffer layer, a first cladding, a first active region, a first upper cladding, a photon crystal layer, a second lower cladding, a second active region, a second upper cladding, a P type cladding and a P type ohm contact layer are set upwards from the bottom in it, in which, a first optical feedback cavity is composed of the distributive Bragg reflector and the top surface of the single-chip integrated white light LED, a second cavity is composed of the photon crystal layer and the top surface of the single-chip integrated white LED, lights emitted by the two active regions are compensated mutually, so it can emit white light directly not needing light conversion of fluorescent powder.

Description

technical field

[0001] The invention relates to a monolithic integrated white light emitting diode with high light color quality and high luminous efficiency. Background technique

[0002] The semiconductor lighting source based on white light-emitting diode (LED) has the advantages of high efficiency, energy saving, and environmental protection. It is expected to become a new generation of electric light source and enter thousands of households, and has a very attractive application prospect. At present, the realization of semiconductor white light source mainly focuses on three methods: the first is red, green and blue LED mixed packaging to obtain white light, which must have a complex drive circuit and feedback control system; the second is to paint on the blue LED chip Apply yellow light phosphor, the blue light excites the phosphor to emit yellow light, and the blue light and yellow light mix to obtain white light; the third is to coat the three-color phosphor on the u...

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