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Near-infrared light-emitting diode and manufacturing method thereof

A technology of light-emitting diodes and manufacturing methods, which is applied to electrical components, circuits, semiconductor devices, etc., can solve the problems that near-infrared light-emitting diodes cannot meet power requirements, and achieve the effects of increased luminous power and simple manufacturing processes

Active Publication Date: 2014-04-09
XIAMEN CHANGELIGHT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] As the demand for the power of near-infrared light-emitting diodes is getting higher and higher, the existing near-infrared light-emitting diodes cannot meet the power requirements, and the epitaxial structure with double-sided quantum wells can obtain greater power by using metal organic compound vapor phase epitaxy growth , the case arises from

Method used

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  • Near-infrared light-emitting diode and manufacturing method thereof
  • Near-infrared light-emitting diode and manufacturing method thereof
  • Near-infrared light-emitting diode and manufacturing method thereof

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Embodiment 1

[0066] refer to Figure 1 to Figure 6 As shown, the first embodiment of the near-infrared light-emitting diode disclosed by the present invention, such as figure 1 The first epitaxial structure of the shown near-infrared light-emitting diode, the first epitaxial on the top of the AlGaAs substrate 1, from bottom to top, is the top first-type current spreading layer 11, the top first-type confinement layer 12, and the top has The source layer 13 , the top second-type confinement layer 14 , the top second-type current spreading layer 15 , the first protection layer 16 and the second protection layer 17 , the first protection layer 16 and the second protection layer 17 form a protection layer.

[0067] The substrate 1 is made of AlGaAs with 20% Al composition, the thickness is 300 μm, and it is doped with the first type, and the doping concentration is 1.0E+18. The quantum well of the top active layer 13 adopts the AlGaInAs / AlGaAs quantum well structure, the logarithm of the top ...

Embodiment 2

[0076] refer to Figure 7 to Figure 12 As shown, the second embodiment of the near-infrared light-emitting diode disclosed by the present invention, such as Figure 7 The first epitaxial structure of the shown near-infrared light-emitting diode, the first epitaxial on the top of the GaAs substrate 2, from bottom to top, is the top first-type current spreading layer 21, the top first-type confinement layer 22, and the top has The source layer 23 , the top second-type confinement layer 24 , the top second-type current spreading layer 25 , the first protection layer 26 and the second protection layer 27 , the first protection layer 26 and the second protection layer 27 form a protection layer.

[0077] Wherein, the substrate 2 has a thickness of 300 μm and is doped with the first type, and the doping concentration is 1.0E+18. The quantum well of the top active layer 24 adopts the quantum well structure of GaInAs / AlGaAs, the logarithm of the top quantum well is 3 pairs, and the l...

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Abstract

The invention discloses a near-infrared light-emitting diode. A top first type current expanding layer, a top first type limiting layer, a top active layer, a top second type limiting layer and a top second type current expanding layer are formed from bottom to top in sequence at the top of a GaAs or AlGaAs substrate, a first type tunnel junction, a second type tunnel junction, a bottom second type current expanding layer, a bottom second type limiting layer, a bottom active layer, a bottom first type limiting layer and a bottom first type current expanding layer are formed in sequence from bottom to top at the bottom of the substrate, the second type tunnel junction is of a multi-layer film epitaxy structure, a doping source of the second type tunnel junction is Mg, and the doping concentration is more than 2.0 * 1019. The light-emitting power of the near-infrared light-emitting diode is greatly improved, and the manufacturing technology of the near-infrared light-emitting diode is simple.

Description

technical field [0001] The invention relates to a near-infrared light-emitting diode and a manufacturing method thereof. Background technique [0002] Near-infrared light-emitting diodes are widely used in communication and remote sensing devices due to their low power consumption, small size and high reliability. [0003] In the prior art, near-infrared light-emitting diodes are mainly grown by liquid phase epitaxy, and the AlGaAs heterojunction is used as the active layer. The infrared diodes grown by this method have low internal quantum efficiency. Even a near-infrared light-emitting diode with a quantum well structure grown by metal-organic compound vapor phase epitaxy has relatively low power due to the use of a single epitaxial structure. [0004] As the demand for the power of near-infrared light-emitting diodes is getting higher and higher, the existing near-infrared light-emitting diodes cannot meet the power requirements, and the epitaxial structure with double-s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/30H01L33/06H01L33/00
CPCH01L33/0062H01L33/06H01L33/14H01L33/30
Inventor 林志伟陈凯轩蔡建九张永林志园尧刚姜伟
Owner XIAMEN CHANGELIGHT CO LTD
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