Power increasing method of infrared LED chip made of gallium aluminum arsenic materials

A technology of LED chips and gallium aluminum arsenic, which is applied in the field of power improvement of infrared LED chips, can solve the problems of small light-emitting area and affect the light-emitting power of infrared LED chips, etc. Effect
CN111162155AActive Publication Date: 2020-05-15深圳市奥伦德元器件有限公司
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
深圳市奥伦德元器件有限公司
Publication Date
2020-05-15

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Abstract

The invention discloses a power increasing method of an infrared LED chip made of gallium aluminum arsenic materials. The method comprises the steps of: coating the infrared LED chip with photoresistand baking the infrared LED chip; carrying out photoetching processing on the P surface of the infrared LED chip to generate a light guide hole in the P surface, and then carrying out baking processing; soaking the infrared LED chip into a first mixed solution formed by mixing phosphoric acid and hydrogen peroxide for etching treatment; soaking the etched infrared LED chip into a second mixed solution formed by mixing nitric acid, glacial acetic acid and water for roughening treatment; and carrying out photoresist removing treatment and cleaning treatment on the infrared LED chip after roughening treatment. The light guide hole is formed in the P surface through photoetching treatment, so that the light-emitting area is increased, and the light-emitting power is improved; the open light guide hole can be formed through etching treatment, so that most of light rays cannot be reflected or absorbed, and the luminous power is improved; in addition, the light-emitting area can be increasedand the light-emitting power can be improved by roughening the surfaces of the P surface, the N surface and the side surface and roughening the light guide hole.
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Description

technical field

[0001] The invention relates to the technical field of electronic devices, in particular to a method for increasing the power of an infrared LED chip made of gallium aluminum arsenic. Background technique

[0002] For infrared LED chips made of gallium aluminum arsenic with a wavelength of 850nm and 940nm, its application range is becoming wider and wider. In the military, it is mainly used in artillery, tanks and individual night vision devices, range finders, stealth monitoring and equipment remote control, etc.; in civilian use, it is mainly used in computer cameras, digital cameras, video cameras, security monitoring, traffic monitoring and home appliance remote controls. With the improvement of people's living standards, the pursuit of long-distance and high-definition is getting higher and higher, so there is an increasing demand for high-power GaAlAs material infrared LED chips. For the existing infrared LED chip made of gallium aluminum arsenic mate...

Claims

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