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Luminescent thin film material and preparation method thereof

A luminescent thin film and raw material technology, applied in luminescent materials, chemical instruments and methods, zinc oxide/zinc hydroxide, etc., can solve the problem of low luminous efficiency

Active Publication Date: 2011-12-14
深圳市海洋王照明技术有限公司 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, due to the defects of ZnO itself and the high refractive index shared by semiconductor materials, ZnO-based light-emitting devices that are about to enter the market, like other light-emitting devices that have been commercialized, face the problem of low luminous efficiency, so improving the luminous efficiency of ZnO thin films It is an important step in the complete practicality and high efficiency of ZnO-based light-emitting devices

Method used

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preparation example Construction

[0020] The preparation method of the above-mentioned luminescent film material can be a sol-gel method, which includes the following steps:

[0021] (1) Prepare M ion solution. The raw material containing M is dissolved in the first solvent to prepare a 0.001mol / L-0.01mol / L M ion solution. Wherein the raw material of M can be the salt of this M, preferably chloroauric acid (HAuCl 4 4H 2 O), chloroplatinic acid (H 2 PtCl 6 ·6H 2 O), silver nitrate (AgNO 3 ) or palladium chloride (PdCl 2 ) at least one of. The first solvent is preferably absolute ethanol or deionized water.

[0022] (2) Prepare the precursor solution. The raw material of zinc and the raw material of rare earth can be weighed according to the ratio of Zn: Re=(1-x):x, add stabilizer and aforementioned M ion solution, and be prepared with the second solvent so that the total concentration of zinc ion and rare earth ion is 0.05mol / L~0.70mol / L precursor solution. Wherein the raw material of zinc can be zi...

Embodiment 1

[0029] Take by weighing silver nitrate 0.8494g, be made into the aqueous solution 1000mL that concentration is 0.005mol / L; According to chemical formula Zn 0.99 Eu 0.01 For the molar ratio of each element in O, 1.3494g of zinc chloride, 0.0446g of europium nitrate and 1.26mL of ethanolamine were weighed respectively, and then 12mL of silver nitrate solution was added, and the total molar concentration of zinc ions and europium ions was prepared with ethanol to be 0.2mol / L. 50mL of ethanol solution; followed by stirring in a water bath at 65°C for 4h to obtain a uniform Zn 0.99 Eu 0.01 O precursor solution; finally the resulting Zn 0.99 Eu 0.01 The O precursor solution was aged in an oven at 60 °C for 60 h to obtain Zn doped with silver ions 0.99 Eu 0.01 O colloid.

[0030] The obtained Zn added with silver ions 0.99 Eu 0.01 O colloid is coated on the substrate, and the coating is applied by spin coating, and the number of times is 8 times. After each coating, the film ...

Embodiment 2

[0032] Take by weighing 1.6987g of silver nitrate, and make it into 1000mL of ethanol solution with a concentration of 0.01mol / L; according to the chemical formula Zn 0.96 Tb 0.04 For the molar ratio of each element in O, weigh 1.4280g of zinc nitrate, 0.0747g of terbium chloride and 0.63mL of ethanolamine, then add 2.5mL of silver nitrate solution, and prepare the total molar concentration of zinc ions and terbium ions with ethanol to be 0.1mol / L 50mL of ethanol solution; followed by stirring in a water bath at 50°C for 8h to obtain a uniform Zn 0.96 Tb 0.04 O precursor solution, and finally the resulting Zn 0.96 Tb 0.04 The O precursor solution was aged in an oven at 55 °C for 88 h to obtain Zn doped with silver ions 0.96 Tb 0.04 O colloid.

[0033] The obtained Zn added with silver ions 0.96 Tb 0.04 O colloid is coated on the substrate, and the coating is applied by spin coating, and the number of times is 10 times. After each coating, the film is placed in an oven ...

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Abstract

A luminescence film material contains rare-earth zinc oxide and metal nanoparticles doped in the rare-earth zinc oxide. The general formula of the luminescence film material is Zn1-xRexO:M, wherein x is larger than 0 and less than or equal to 0.05; Re contains at least one element selected from europium (Eu), terbium (Tb), erbium (Er) and dysprosium (Dy); and M contains at least one element selected from aurum (Au), argentums (Ag), platinum (Pt) and palladium (Pd). The mol ratio of the rare-earth zinc oxide to the metal nanoparticles is 1: (2*10-5-1*10-2). The luminescence film material has high luminescent efficiency. The invention also provides a preparation method of the above luminescence film material.

Description

【Technical field】 [0001] The invention relates to a luminescent film material, in particular to a luminescent film material containing zinc oxide and a preparation method thereof. 【Background technique】 [0002] Zinc oxide (ZnO) is an important II-VI wide band gap and direct band gap semiconductor material. Its band gap at room temperature is 3.20eV and the exciton binding energy is 60meV. Another new type of optoelectronic material has broad application prospects in high-tech fields such as information storage and display, optical communication, semiconductor white light lighting, medicine and biology. At present, people have been able to use methods such as molecular beam epitaxy (MBE), metal organic chemical vapor deposition (MOCVD) and magnetron sputtering to prepare ZnO thin films with better quality to replace traditional indium tin oxide (ITO) conductive thin films. The window material of solar cells, photoelectric sensors and flat panel display devices can also be a...

Claims

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Application Information

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IPC IPC(8): C01G9/02C09K11/78
Inventor 周明杰王烨文吕婷马文波
Owner 深圳市海洋王照明技术有限公司
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