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Method for enhancing LED luminous efficiency based on 3D printing ferromagnetic layer

A 3D printing, luminous efficiency technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of high regularity requirements, high cost, high equipment and process requirements, etc., to improve radiation recombination rate and enhance luminous efficiency. , the effect of improving production efficiency

Active Publication Date: 2018-04-13
TAIYUAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

PSS has high requirements on the regularity of the pattern, and the sapphire substrate is relatively hard. Whether it is dry etching or wet etching process, it is difficult to achieve the consistency and uniformity of the entire pattern, and the production process High requirements on equipment and process, resulting in high cost
The manufacturing process of DBR and photonic crystal is relatively complex and costly, and the surface roughening technology adopts dry etching or wet etching process, which also presents great challenges

Method used

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  • Method for enhancing LED luminous efficiency based on 3D printing ferromagnetic layer
  • Method for enhancing LED luminous efficiency based on 3D printing ferromagnetic layer
  • Method for enhancing LED luminous efficiency based on 3D printing ferromagnetic layer

Examples

Experimental program
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Effect test

Embodiment 1

[0031] A method based on 3D printing ferromagnetic layer to enhance LED luminous efficiency,

[0032] Step 1: Provide a sapphire substrate, and grow a low-temperature GaN nucleation layer, unintentionally doped GaN layer, n-GaN, InGaN / GaN MQW, and p-GaN epitaxial wafers sequentially on the substrate;

[0033] Step 2: Etching the n-type layer mesa on the epitaxial wafer, and the etching depth reaches the n-GaN layer;

[0034] Step 3: Write the motion path program of each 3D printing head according to the structural design, put the cleaned epitaxial wafer into the 3D printer as the substrate, and use a single or array 3D mirror material printing head to print thickness on the p-GaN layer 100nm ohmic contact mirror;

[0035] Print an n-type electrode with a thickness of 220nm on the n-type layer mesa using a single or array 3D n-type electrode material printing head;

[0036] Use a single or array 3D p-type electrode material printing head to print a p-type electrode with a thi...

Embodiment 2

[0041] A method based on 3D printing ferromagnetic layer to enhance LED luminous efficiency,

[0042] Step 1: Provide a sapphire substrate, and grow a low-temperature GaN nucleation layer, unintentionally doped GaN layer, n-GaN, InGaN / GaN MQW, and p-GaN epitaxial wafers sequentially on the substrate;

[0043] Step 2: Etching the n-type layer mesa on the epitaxial wafer, and the etching depth reaches the n-GaN layer;

[0044] Step 3: Write the motion path program of each 3D printing head according to the structural design, put the cleaned epitaxial wafer into the 3D printer as the substrate, and use a single or array 3D mirror material printing head to print thickness on the p-GaN layer 150nm ohmic contact mirror;

[0045] Use a single or array type 3D n-type electrode material printing head to print n-type electrodes with a thickness of 300nm on the n-type layer mesa;

[0046] Use a single or array 3D p-type electrode material printing head to print a p-type electrode with a...

Embodiment 3

[0051] A method based on 3D printing ferromagnetic layer to enhance LED luminous efficiency,

[0052] Step 1: Provide a sapphire substrate, and grow a low-temperature GaN nucleation layer, unintentionally doped GaN layer, n-GaN, InGaN / GaN MQW, and p-GaN epitaxial wafers sequentially on the substrate;

[0053] Step 2: Etching the n-type layer mesa on the epitaxial wafer, and the etching depth reaches the n-GaN layer;

[0054] Step 3: Write the motion path program of each 3D printing head according to the structural design, put the cleaned epitaxial wafer into the 3D printer as the substrate, and use a single or array 3D mirror material printing head to print thickness on the p-GaN layer 200nm ohmic contact mirror;

[0055] Use a single or array type 3D n-type electrode material printing head to print n-type electrodes with a thickness of 150nm on the n-type layer mesa;

[0056] Use a single or array 3D p-type electrode material printing head to print a p-type electrode with a...

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Abstract

The invention belongs to the field of photoelectronic devices, specifically a method for improving the light-emitting efficiency of an LED based on the 3D printing of a ferromagnetic layer. The method employs an MOCVD or MBE growth epitaxial wafer which is provided with a nucleating layer, an unintentionally doped layer, an n-type layer, a multi-cycle quantum well active layer and a p-type layer, etches an n-type layer table surface, and carries out 3D printing of an ohmic contact reflector, an n-type electrode, a p-type electrode, a ferromagnetic material layer, and a ferromagnetic material protection layer. The method improves the light-emitting efficiency of the LED through employing the 3D printing of the ferromagnetic layer. A magnetic field generated by the ferromagnetic material layer acts on a multi-quantum-well active region, can enable carriers to be limited in an In-abundant region, and improves the radiative recombination rate of carriers, thereby improving the light-emitting efficiency. Moreover, the 3D printing is simple in production process, and can effectively improve the production efficiency.

Description

technical field [0001] The invention belongs to the field of optoelectronic devices, in particular to a method for enhancing LED luminous efficiency based on 3D printing ferromagnetic layers. Background technique [0002] Light Emitting Diode (LED) has the characteristics of high brightness, low energy consumption, long life, fast response and environmental protection, and is widely used in indoor and street lighting, traffic signals and outdoor displays, automotive lighting, LCD backlight and many other fields. [0003] At present, the internal quantum efficiency of blue GaN-based LEDs can reach more than 80%, while that of green LEDs is only 40%. However, the external quantum efficiency of high-power blue LED chips is usually only about 40%, while green light is even lower. The main factor that restricts the improvement of external quantum efficiency is the low extraction efficiency of light caused by total internal reflection at the GaN interface and the air interface. ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/14B22F3/115
CPCB22F3/115H01L33/0075H01L33/14
Inventor 卢太平朱亚丹赵广洲许并社
Owner TAIYUAN UNIV OF TECH
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