Light-emitting diode based on N-type doped stack and functional layer

Abstract

The invention relates to a light-emitting diode based on an N-type doped stack and a functional layer. The light-emitting diode comprises a substrate layer, a buffer layer located on the substrate layer, an N-type semiconductor layer located on the buffer layer, an N-type doped laminated layer located on the N-type doped layer, a quantum well light-emitting layer located on the N-type doped laminated layer, a functional layer located on the quantum well light-emitting layer, a P-type doped layer located on the functional layer, and a P-type semiconductor layer located on the P-type doped layer, wherein and the N-type doped laminated layer comprises a plurality of first N-type doped layers and a plurality of second N-type doped layers; and the functional layer comprises an electron blockinglayer, a first hole injection layer and a second hole injection layer. The light-emitting diode provided by the invention is provided with the N-type doped laminated layer, so that the migration rateof electrons can be reduced, and the probability of radiative recombination between holes and electrons in the quantum well light-emitting layer can be improved by adjusting the rate of the electronsmigrated to the quantum well light-emitting layer, so that the light emitting efficiency of the light-emitting diode is improved.

Description

technical field [0001] The invention relates to the technical field of light-emitting elements, in particular to a light-emitting diode based on an N-type doped stack and a functional layer. Background technique [0002] Light Emitting Diode (LED for short) is a light emitting device that emits ultraviolet, visible or infrared light when a forward voltage is applied across a semiconductor p-n junction. It is a new generation of solid light source. Because of its small size, long life, low driving voltage, fast response, shock resistance, heat resistance and other characteristics, the efficiency of light-emitting diodes for semiconductor lighting has been continuously improved in recent years. [0003] At present, a light-emitting diode generally includes a substrate layer, a buffer layer, an N-type semiconductor layer, a multi-quantum well light-emitting layer, and a P-type semiconductor layer. Among them, the N-type semiconductor layer is used to provide electrons; the P-t...

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Problems solved by technology

[0004] However, at present, because the mobility of electrons is much higher than that of holes, the number of electrons injected into the multi-quantum well light-emitting layer is too large, and it is easy to transition from the multi-quantum well light-emitting layer to the P-type semiconductor layer and undergo non-radiative recombination with holes. Affect the luminous efficiency of light-emitting diodes

And because the mobility of electrons is much higher than that of holes, the electrons generated in the N-type semiconductor layer can quickly enter the quantum well light-emitting layer, and the excess electrons will jump from the quantum well light-emitting layer to the P-type semiconductor layer, so that the electrons and Non-radiative recombination of holes affects the luminous efficiency of light-emitting diodes

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