5results about How to "Improve localization" patented technology

This application discloses a GaN-based micro-LED epitaxial structure, device, and fabrication method. The GaN-based micro-LED epitaxial structure includes, along the growth direction, a substrate, a buffer layer, an N-type doped GaN electron injection layer, an active region, and an Al2O3 layer. y Ga 1‑y The substrate consists of an N-type electron blocking layer and a P-type doped GaN hole injection layer; the substrate is selected from a (111) crystal plane single-crystal silicon substrate, a c-axis single-crystal sapphire substrate, a c-axis single-crystal silicon carbide substrate, or a c-axis self-supporting single-crystal gallium nitride substrate; the active region includes an InGaN-based light-emitting structure, which is at least one of an InGaN / GaN alternating multi-quantum-well structure, a GaN / InGaN / GaN single-quantum-well structure, and an InGaN quantum dot structure. This application shortens the carrier radiative recombination lifetime, weakens the quantum-confined Stark effect, and improves the radiative recombination rate by employing a thin quantum well or quantum dot active region structure, thereby enhancing the device's modulation bandwidth and photoelectric efficiency, meeting the performance requirements of light sources for applications such as data center optical interconnects, co-packaged optics, and high-speed visible light communication.

The invention discloses a GaN-based semiconductor laser with a limiting factor enhancement layer, which sequentially comprises a substrate, a lower coating layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper coating layer from bottom to top, and is characterized in that the limiting factor enhancement layer is arranged between the electron blocking layer and the upper coating layer; the limiting factor enhancement layer comprises a first limiting factor enhancement layer and a second limiting factor enhancement layer; and the thickness of the limiting factor enhancement layer is 5-1000 nm. According to the invention, refractive index coefficients, electron mobility, breakdown field strength and change angles and change curves of electron affinity of the first limiting factor enhancement layer and the second limiting factor enhancement layer are designed, an effective refractive index difference is regulated and controlled to realize a high kink level, a far-image FFP image with a low aspect ratio is realized, a horizontal divergence angle is reduced, stray light and leakage light are reduced, and the performance of the device is improved. The far-field FFP image with local interference is reduced, and the optical confinement effect and the light beam quality factor are improved.

This invention discloses a coaxial laser and jet electrolysis composite machining system, belonging to the field of special machining technology, which can solve the problem of the high difficulty of laser and electrolysis composite machining of precision micro-holes in the prior art. The system includes: a laser unit, an output optical fiber, a machining head, a liquid supply unit, and a first power supply; the laser unit provides a laser beam to the output optical fiber; the machining head is provided with a laser channel, and the output optical fiber is disposed within the laser channel for transmitting the laser beam to the area to be machined on the workpiece; a conductive structure is coaxially disposed on the outer side of the output optical fiber; a liquid channel is provided on the machining head, and the liquid channel is connected to the nozzle of the machining head; the liquid supply unit provides electrolyte to the liquid channel, so that the electrolyte is coaxially jetted from the gap between the nozzle sidewall and the conductive structure into the area to be machined on the workpiece; the anode of the first power supply is connected to the workpiece, and the cathode of the first power supply is connected to the conductive structure. This invention is used for laser and electrolysis composite machining.

The invention belongs to the technical field of semiconductor devices, and particularly discloses a high-electron-mobility transistor with an InGaN insertion layer and a double-barrier cap layer and a preparation method of the high-electron-mobility transistor. The high-electron-mobility transistor comprises a substrate, a nucleating layer, an AlGaN gradient buffer layer, a GaN channel layer, an InGaN insertion layer, an AlGaN barrier layer, a barrier protection layer, a double-barrier cap layer (an AlGaN layer, a GaN layer and an AlGaN layer) and a gate electrode which are sequentially arranged in a contact mode. Ohmic contact regions are arranged on the two sides of the AlGaN barrier layer and the barrier protection layer respectively and are electrically connected with the source electrode and the drain electrode respectively. By introducing the specific epitaxial layer combination and doping design, the distribution and control of two-dimensional electron gas are optimized, the confinement to electrons is increased, the output characteristic of the device is improved, the current collapse effect is inhibited, the leakage current is reduced, and the threshold voltage stability and switching characteristic of the device are improved.

A wheel drive unit (5) fitted on a chassis of a heavy vehicle (2), the wheel drive unit comprising: at least one axle (50, 52) configured to drive a wheel in rotation; at least one electric motor (8) capable of generating a torque; a gearbox (20) for transmitting the torque of the motor to the wheel axle; the transmission system is located between the electric motor and the gearbox, and the transmission system is composed of a gear train; and wherein the axis of rotation of the electric motor is parallel to the axis of rotation of the wheel axle.