Ultraviolet LED epitaxial wafer and preparation method and application thereof

Abstract

The invention discloses an ultraviolet LED epitaxial wafer and a preparation method and application thereof. The ultraviolet LED epitaxial wafer comprises an n-type semiconductor layer, an active layer, an electron blocking layer and a p-type semiconductor layer which are sequentially grown in an epitaxial mode; the electron blocking layer is composed of a superlattice structure formed by alternately growing a first sub-layer and a second sub-layer, the first sub-layer is a boron nitride aluminum layer, and the second sub-layer is an aluminum gallium nitride layer. According to the ultravioletLED epitaxial wafer provided by the invention, the electron blocking layer is formed by the boron nitride aluminum layer and the aluminum gallium nitride layer which grow alternately, so the energy level position of a conduction band of the electron blocking layer is higher, the effective barrier height of electrons is improved, and the electrons are effectively prevented from jumping to the p-type semiconductor layer; meanwhile, the hole barrier height of the electron blocking layer and the active region is reduced, and the injection efficiency of the hole injection active layer is remarkably improved; therefore, the radiation recombination rate of the active region can be improved, and the luminous efficiency of the ultraviolet LED is improved.

Description

technical field [0001] The invention relates to the technical field of diodes, in particular to an ultraviolet LED epitaxial wafer and a preparation method and application thereof. Background technique [0002] An ultraviolet light emitting diode (LED) generally includes an epitaxial wafer and electrodes prepared on the epitaxial wafer. AlGaN-based ultraviolet LED epitaxial wafers generally include: a substrate and a buffer layer, n-type semiconductor layer, active layer, electron blocking layer and p-type semiconductor layer that are epitaxially grown on the substrate in sequence. When a current is injected into the AlGaN-based ultraviolet LED, the electrons injected into the n-type semiconductor layer and the holes injected into the p-type semiconductor layer will enter the multi-quantum well active region under the action of the current and recombine to emit ultraviolet light. Among them, the electron blocking layer is generally an AlGaN electron blocking layer with a hi...

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Problems solved by technology

[0004] In order to solve the problem that electrons are easy to escape from the active area and holes are not easy to inject into the active area in the ultraviolet LED device, resulting in low luminous efficiency of the ultraviolet LED device, the inventor thought of improving the structure of the electron blocking layer on the ultraviolet LED epitaxial wafer, To provide a specially structured electron blocking layer with a higher conduction band energy level and a smaller valence band energy level, thereby effectively improving the radiative recombination efficiency of electrons and holes in the active region and improving the luminous efficiency of ultraviolet LED devices

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