High-efficient GaN-based semiconductor light emitting diode

Abstract

The invention discloses a GaN-based semiconductor light emitting diode (LED), which is capable of enhancing a luminous efficiency under high injection currents. The GaN-based LED is composed of a substrate, an N type doping layer, a multi-quantum well luminescent layer, a P type doping layer and electrodes. A band gap of a last barrier in the multi-quantum well luminescent layer decreases linearly along a growth direction, wherein the last barrier approaches a P type AlGaN electronic barrier layer; and the material of the band gap is alloy that is formed by other barrier materials in the multi-quantum well structure and InN or GaN; moreover, the content of the InN or the GaN increases linearly along the growth direction.

Description

technical field [0001] The invention relates to a semiconductor light-emitting diode (LED), in particular to a GaN-based semiconductor light-emitting diode capable of enhancing luminous efficiency under high injection current. Background technique [0002] Since the 1990s, with a series of major breakthroughs in the growth process of GaN-based semiconductor materials, a new generation of semiconductor materials represented by GaN has gradually emerged. GaN-based semiconductor materials can be made into highly efficient blue, green and white light-emitting diodes. As a new type of high-efficiency solid-state light source, they have the characteristics of long life, energy saving, and environmental protection. They have been widely used in large-screen color displays, automotive lighting, traffic signals, multimedia displays, and optical communications. They will also replace incandescent lamps, Fluorescent lamps have achieved another revolution in the history of human lighti...

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