Ion-implanted one-dimensional electron gas GaN-based HEMT (high electron mobility transistor) device and preparation method

Abstract

The invention discloses an ion-implanted one-dimensional electron gas GaN-based HEMT (high electron mobility transistor) device and a preparation method. The problems of poorer high-temperature high-voltage characteristics, frequency characteristics and power characteristics of the conventional one-dimensional electron gas device are mainly solved. The device comprises a substrate, buffer layer, a potential barrier layer, a passivation layer and a protective layer from bottom to top, wherein a source and a drain are arranged at two ends on the potential barrier layer respectively; the passivation layer is positioned on the potential barrier layer between the source and the drain; a gate trough is formed in the passivation layer, and a gate is arranged in the gate trough; the buffer layer is made from GaN, and the potential barrier layer is made from AlGaN; anions are implanted into local areas on the potential barrier layer, and the areas where the anions are implanted are a plurality of spaced strips; the widths of areas where the anions are not implanted between the strips are at a nanometer order of magnitude, and a one-dimensional electron gas is formed in heterogeneous junctions below the areas where the anions are implanted. Compared with Si-based and GaAs-based devices, the device has good high-temperature high-voltage characteristics, good frequency characteristics and good power characteristics, and a one-dimensional electron gas device with super-high speed and low power consumption can be manufactured.

Description

technical field [0001] The invention belongs to the technical field of microelectronics and relates to a semiconductor device, in particular a one-dimensional electron gas HEMT device based on a GaN semiconductor material heterojunction structure, which can be used as a basic device of a microwave, millimeter wave communication system and a radar system. Background technique [0002] III-V compound semiconductor materials are the third-generation semiconductor materials that have been developed rapidly for more than ten years, such as GaN-based, GaAs-based, InP-based and other semiconductor materials, which have a large band gap and can be combined with InN, AlN, etc. Alloy semiconductors are formed to make their forbidden band width adjustable. People usually use these III-V compound semiconductor materials to form various heterojunction structures. Due to the large difference in the forbidden band width of the III-V compound semiconductor materials on both sides of the het...

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Problems solved by technology

[0017] one. Due to the small bandgap of Si and GaAs semiconductor materials, the intrinsic carrier concentration is high and the breakdown electric field is small, which makes the prepared Si-based and GaAs-based devices have poor high-temperature and high-voltage characteristics and poor radiation resistance. weak;

[0018] two. Due to the poor electron transport characteristics of Si and GaAs semiconductor materials, the frequency characteristics of Si-based and GaAs-based devices prepared are poor;

[0019] three. Due to the poor polarization characteristics of Si and GaAs semiconductor materials when forming heterojunctions, the electron concentration is greatly limited, making the prepared Si-based and GaAs-based devices have poor power characteristics.

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