The invention discloses an ion-implanted one-dimensional electron gas GaN-based HEMT (high electron mobility transistor) device and a preparation method. The problems of poorer high-temperature high-voltage characteristics, frequency characteristics and power characteristics of the conventional one-dimensional electron gas device are mainly solved. The device comprises a substrate, buffer layer, a potential barrier layer, a passivation layer and a protective layer from bottom to top, wherein a source and a drain are arranged at two ends on the potential barrier layer respectively; the passivation layer is positioned on the potential barrier layer between the source and the drain; a gate trough is formed in the passivation layer, and a gate is arranged in the gate trough; the buffer layer is made from GaN, and the potential barrier layer is made from AlGaN; anions are implanted into local areas on the potential barrier layer, and the areas where the anions are implanted are a plurality of spaced strips; the widths of areas where the anions are not implanted between the strips are at a nanometer order of magnitude, and a one-dimensional electron gas is formed in heterogeneous junctions below the areas where the anions are implanted. Compared with Si-based and GaAs-based devices, the device has good high-temperature high-voltage characteristics, good frequency characteristics and good power characteristics, and a one-dimensional electron gas device with super-high speed and low power consumption can be manufactured.