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56results about How to "Increased power range" patented technology

Power amplifier

InactiveUS20050030104A1Highly efficiently controlled transmission powerContinuous levelAmplifier modifications to reduce non-linear distortionGain controlAudio power amplifierAmplitude control
A power amplifier (1) for receiving and amplifying an input signal (10) and outputting an output signal (11) is disclosed. The power amplifier comprises: N power amplifying units (12) (N is an integer larger than 1) connected in parallel so as to output amplified signals in response to the input signal (10); an output combining unit (14) for combining the output signals from the N power amplifying units (12) and outputting a combined signal as the output signal (11) of the power amplifier; and an amplitude controlling unit (15) for selectively turning ON each of the N power amplifying units (12) based on an amplitude of the input signal (10). In the power amplifier, the amplitude controlling unit (15) may comprise N amplitude adjusters (113) connected in parallel for adjusting the amplitude of the input signal (110) of the power amplifier; and a controller (115) for selectively turning ON each of the N power amplifying units (112) and controlling the amplitude adjusters (113) so that an amplitude of the output signal (111) becomes a substantially continuous function with respect to the amplitude of the input signal (110). The power amplifier may further comprise a local oscillator (222) outputting an constant envelope signal, receiving a modulation signal (210) as the input signal of the power amplifier and outputting an amplified modulated signal (211) as the output signal of the power amplifier; wherein the N power amplifying units comprise N saturation amplifying units connected in parallel so as to amplify the constant envelope signal from the local oscillator; and the amplitude controlling unit comprises an amplifying controller (215) for selectively turning ON each of the N saturation amplifying units (212) based on an amplitude of the modulation signal (210).
Owner:NTT DOCOMO INC

Fuel cell stack test board and back pressure control method thereof

The invention discloses a fuel cell stack test board and a back pressure control method thereof. The test board comprises a hydrogen system and an air system. The hydrogen system is communicated witha hydrogen inlet of a fuel cell stack through an air inlet pipeline; the air system is communicated with an air inlet of the fuel cell stack through an air inlet pipeline; flow meters for detecting the flow of the air inlet pipelines are arranged on the air inlet pipelines; a hydrogen outlet and an air outlet of the fuel cell stack are respectively provided with an air outlet pipeline; first backpressure valves and second back pressure valves are arranged on the air outlet pipelines in parallel; the back pressure range of the first back pressure valve is smaller than that of the second back pressure valve; and pressure sensors used for detecting the pressure are arranged on pipeline sections between the air inlet pipeline or/and the air outlet pipeline and the first back pressure valve and between the air inlet pipeline or/and the air outlet pipeline and the second back pressure valve. According to the back pressure control method, double back pressure valves and two-way control are utilized, and back pressure control is rapidly achieved through different flow, higher-precision control is realized, and meanwhile, the coverage of a larger power range is realized, and the cost of the test board of a client is saved.
Owner:WUHAN GROVE HYDROGEN AUTOMOBILE CO LTD

Bridge type single-firing line power taking circuit

The invention discloses a bridge type single-firing line power taking circuit. The bridge type single-firing line power taking circuit comprises a bridge type power taking circuit, an energy storage system, a detection system, a driving system and a control system, wherein the bridge type power taking circuit comprises a first diode (D1), a second diode (D2), a first metal oxide semiconductor (MOS) transistor (Q1) and a second MOS transistor (Q2), the first diode (D1), the second diode (D2), a parasitic diode (D3) of the first MOS transistor (Q1) and a parasitic diode (D4) of the second MOS transistor (Q2) form a rectification bridge structure when the first MOS transistor (Q1) and the second MOS transistor (Q2) are in switch-off states, the energy storage system is used for storing energy taken by the bridge type power taking circuit, and a voltage detection part in the detection system is used for detecting the taken voltage VCC, comparing the voltage VCC with a set judgment voltage and then converting a comparison value to a signal to be sent to the control system. By the bridge type single-firing line power taking circuit, the risk that a stable voltage of a single firing line in the prior art is taken to enable that the power taking circuit cannot be damaged by an impact current is solved.
Owner:NANJING IOT SENSOR TECH

Ion-implanted one-dimensional electron gas GaN-based HEMT (high electron mobility transistor) device and preparation method

The invention discloses an ion-implanted one-dimensional electron gas GaN-based HEMT (high electron mobility transistor) device and a preparation method. The problems of poorer high-temperature high-voltage characteristics, frequency characteristics and power characteristics of the conventional one-dimensional electron gas device are mainly solved. The device comprises a substrate, buffer layer, a potential barrier layer, a passivation layer and a protective layer from bottom to top, wherein a source and a drain are arranged at two ends on the potential barrier layer respectively; the passivation layer is positioned on the potential barrier layer between the source and the drain; a gate trough is formed in the passivation layer, and a gate is arranged in the gate trough; the buffer layer is made from GaN, and the potential barrier layer is made from AlGaN; anions are implanted into local areas on the potential barrier layer, and the areas where the anions are implanted are a plurality of spaced strips; the widths of areas where the anions are not implanted between the strips are at a nanometer order of magnitude, and a one-dimensional electron gas is formed in heterogeneous junctions below the areas where the anions are implanted. Compared with Si-based and GaAs-based devices, the device has good high-temperature high-voltage characteristics, good frequency characteristics and good power characteristics, and a one-dimensional electron gas device with super-high speed and low power consumption can be manufactured.
Owner:陕西半导体先导技术中心有限公司

Voltage-reducing and electricity-saving controller of motor

The invention discloses a voltage-reducing and electricity-saving controller of a motor, comprising a power supply circuit, a microprocessor circuit and a power factor angle acquisition circuit, wherein the power supply circuit is connected with the microprocessor circuit; the controller also comprises a current acquisition circuit, a synchronous information acquisition circuit, a silicon-controlled drive circuit, a silicon-controlled circuit and a control signal input circuit which are respectively connected with the microprocessor circuit, wherein the silicon-controlled circuit comprises a first silicon-controlled group, a second silicon-controlled group and a third silicon-controlled group; each silicon-controlled group comprises two pieces of one-way controlled silicon which are reversely connected in parallel; one end of each group of three silicon-controlled groups is the input end of the controller and the other end is the output end of the controller; and the silicon-controlled drive circuit comprises a first drive circuit, a second drive circuit and a third drive circuit which are connected with the trigger ends of the first, the second and the third silicon-controlled groups in sequence. The invention has the advantages of favorable real-time property, high accuracy and commonality.
Owner:JIANGSU LEAP MACHINE
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