Boron-doped graphene nanoribbons and preparation method thereof

A graphene nanoribbon and boron doping technology, which is applied in graphene, nanocarbon, nanotechnology, etc., can solve the problems of graphene nanoribbon size control difficulty, CNW structure damage, low output, etc., to save the cost of research and development equipment , complete structure, and the effect of lowering the reaction temperature

Active Publication Date: 2014-07-16
OCEANS KING LIGHTING SCI&TECH CO LTD +2
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, whether it is the early preparation method or the recent preparation method, it will involve the reaction in the plasma atmosphere, which will cause certain damage to the structure of CNW.
In addition, there are problems of difficult size control and low yield during the preparation of graphene nanoribbons, which also limit its application.

Method used

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  • Boron-doped graphene nanoribbons and preparation method thereof
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  • Boron-doped graphene nanoribbons and preparation method thereof

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preparation example Construction

[0024] The preparation process of the boron-doped graphene nanobelt of the present invention is roughly divided into the following steps: 1. Etching the substrate: putting the substrate into a dilute acid solution with a concentration of 0.01 to 1mol / L and etching it for 0.5 to 10 minutes, Clean with deionized water, ethanol, acetone after etching.

[0025] The purpose of this step is to: produce defects on the etched surface of the metal substrate by etching the metal substrate, effectively improve the surface structure of the metal substrate, and enable carbon nanowalls to grow on the surface of the metal substrate.

[0026] Wherein, the preferred time for etching the metal substrate is 60-180 seconds, and the preferred acid solution concentration for etching the metal substrate is 0.1-0.5 mol / L. The above optimal etching conditions can achieve a good etching effect and improve the growth efficiency of the carbon nanowall.

[0027] 2. Preparation of carbon nanowall: Put the...

Embodiment 1

[0037] Example 1: 1. Etching the substrate: put the nickel foil into a dilute hydrochloric acid solution with a concentration of 1 mol / L and etch for 0.5 minutes, and clean it with deionized water, ethanol, and acetone after etching.

[0038] 2. Preparation of carbon nanowall: Put the cleaned nickel foil into the reaction chamber and remove the air in the reaction chamber, heat the nickel foil to 900°C, and then turn on the ultraviolet light source equipment to irradiate the ultraviolet light on the nickel foil On the surface, carbonaceous material methane (flow rate of 200sccm) and protective gas nitrogen are introduced, and the volume ratio of methane to nitrogen is 2:1, and kept for 100 minutes.

[0039] After the reaction is completed, stop feeding carbonaceous substances, stop heating the nickel foil and turn off the light source equipment, and stop feeding nitrogen after the reaction chamber cools to room temperature. Carbon nanowalls can be obtained on the surface of the...

Embodiment 2

[0042] Example 2: 1. Etching the substrate: Put the iron foil into a dilute sulfuric acid solution with a concentration of 0.5 mol / L to etch for 4 minutes, and clean it with deionized water, ethanol, and acetone after etching.

[0043] 2. Preparation of carbon nanowalls: Put the cleaned nickel foil into the reaction chamber and remove the air in the reaction chamber, then heat the iron foil to 600°C, then turn on the ultraviolet light source equipment to irradiate the iron foil with ultraviolet light On the surface, the carbonaceous substance ethane (flow rate: 100 sccm) and the protective gas argon are introduced, and the volume ratio of methane to argon is 5:1, and kept for 200 minutes.

[0044] After the reaction is completed, stop feeding carbonaceous substances, stop heating the iron foil and turn off the light source equipment, and stop feeding the protective gas after the reaction chamber cools down to room temperature. Carbon nanowalls can be obtained on the surface of ...

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Abstract

The invention relates to boron-doped graphene nanoribbons and a preparation method thereof. The preparation method comprises the following steps: preparation of oxidized carbon nano wall slurry; and preparation of the boron-doped graphene nanoribbons. The boron-doped graphene nanoribbons belong to P-type doping, the hole concentration can be increased, at the same time, the potential for lithium can be improved, moreover, the yield of the boron-doped graphene nanoribbons is high, raw materials can be self-prepared, and the production cost is reduced. Devices required in the preparation process are all common chemical devices, so that the cost of the research and development devices can be saved, and mass production is fitted.

Description

technical field [0001] The invention relates to the field of chemical material synthesis, in particular to a boron-doped graphene nanobelt and a preparation method thereof. Background technique [0002] Types of carbon materials include zero-dimensional fullerenes (C 60 etc.), one-dimensional carbon nanotubes, carbon nanofibers, etc., two-dimensional graphene, three-dimensional graphite, diamond, etc. Carbon nanowalls (abbreviated as CNW) are carbon nanostructures with a two-dimensional diffusion structure. Leenes, carbon nanotubes, graphene, etc. have completely different characteristics and can be used as raw materials for preparing other carbon materials. [0003] Before the discovery of graphene, people began to study the preparation of carbon nanowalls. In 2002, there were reports on the preparation of carbon nanowalls and their related applications. Graphene nanoribbons not only have the performance of graphene, but also have some special properties, such as its lar...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/04B82Y30/00C01B32/184
Inventor 周明杰袁新生王要兵钟辉
Owner OCEANS KING LIGHTING SCI&TECH CO LTD
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