Double-conduction semiconductor component and manufacturing method thereof

Abstract

The invention discloses a double-conduction semiconductor component. The double-conduction semiconductor component comprises a semiconductor substrate, a first substrate doping area, a second substrate doping area and a grid insulation layer, wherein the semiconductor substrate is provided with a first conduction type, and both the first substrate doping area and the second substrate doping area are provided with second conduction types. The semiconductor substrate is provided with a first groove, the first substrate doping area and the second substrate doping area are respectively arranged in the semiconductor substrate on two sides of the first groove, the grid insulation layer covers the surface of the first groove and is provided with a first part, a second part and a third part, wherein the first part is adjacent to the first substrate doping area, the second part is adjacent to the second substrate doping area, and the third part is arranged at a turning position of the bottom and the side wall of the first groove. The thickness of each of the first part and the second part is smaller than that of the third part. Therefore, withstand voltage of the double-conduction semiconductor component can be increased.

Description

technical field [0001] The invention relates to a double conduction semiconductor component and a manufacturing method thereof, in particular to a double conduction semiconductor component and a manufacturing method thereof, the bottom thickness of the gate insulating layer is greater than the side wall thickness. Background technique [0002] A conventional bilateral conduction semiconductor device is installed in a battery and is used to protect the battery from damage due to charging and discharging during the charging and discharging process of the battery. In order to have the effect of protecting the battery, the known dual-conduction semiconductor component is composed of two N-type power MOSFETs (MOSFETs), and the drains of the two N-type power MOSFETs are electrically connected to Together. Moreover, each N-type power metal oxide semiconductor field effect transistor has a parasitic diode (diode), and the P terminal of the diode is electrically connected to the sou...

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Problems solved by technology

In this way, the withstand voltage capability of the N-type epitaxial layer 14 can be improved. However, the provided P-type substrate 12 and the N-type epitaxial layer 14 have different conductivity types, so an additional epitaxial process is required to form on the P-type substrate 12. N-type epitaxial layer 14, while increasing production cost

Therefore, at present, there are also developments to manufacture double-conduction semiconductor components on N-type substrates, but the double-conduction semiconductor components produced have poor withstand voltage capability.

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