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Compensation for substrate doping in edge reconstruction for in-situ electromagnetic inductive monitoring

An electromagnetic induction and in-situ technology, which is applied in the direction of circuit, electrical components, semiconductor/solid-state device testing/measurement, etc., can solve problems such as in-wafer or wafer inhomogeneity, improve reliability, reduce inhomogeneity, and avoid The effect of undergrinding

Pending Publication Date: 2020-11-03
APPLIED MATERIALS INC
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  • Application Information

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Problems solved by technology

Therefore, determining the grinding endpoint based solely on grinding time can lead to non-uniformity within or between wafers

Method used

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  • Compensation for substrate doping in edge reconstruction for in-situ electromagnetic inductive monitoring
  • Compensation for substrate doping in edge reconstruction for in-situ electromagnetic inductive monitoring
  • Compensation for substrate doping in edge reconstruction for in-situ electromagnetic inductive monitoring

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Embodiment Construction

[0025] One monitoring technique for grinding operations is sensing the current in a conductive layer on the substrate. The induced current can be measured in situ by an inductive monitoring system during grinding to generate a signal. Assuming that the outermost layer undergoing grinding is a conductive layer, the signal from the sensor should depend on the thickness of the conductive layer. Based on the monitoring, the control parameters for grinding can be adjusted, for example, so that the layer locations have substantially the same thickness after grinding, or so that grinding of the layer locations is completed at about the same time. This profile control may be referred to as real-time profile control (RTPC). Additionally, the milling operation may be terminated based on an indication that the monitored thickness has reached a desired endpoint thickness.

[0026] In situ monitoring systems may suffer from signal distortion for measurements made at locations close to th...

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Abstract

A method of compensating for a contribution of conductivity of the semiconductor wafer to a measured trace by an in-situ electromagnetic induction monitoring system includes storing or generating a modified reference trace. The modified reference trace represents measurements of a bare doped reference semiconductor wafer by an in-situ electromagnetic induction monitoring system as modified by a neutral network. The substrate is monitored with an in-situ electromagnetic induction monitoring system to generate a measured trace that depends on a thickness of the conductive layer, and at least a portion of the measured trace is applied to a neural network to generate a modified measured trace. An adjusted trace is generated, including subtracting the modified reference trace from the modifiedmeasured trace.

Description

technical field [0001] The present disclosure relates to chemical mechanical polishing, and more particularly to monitoring conductive layers during chemical mechanical polishing. Background technique [0002] Integrated circuits are typically formed on a substrate by sequentially depositing conductive, semiconducting, or insulating layers on a silicon wafer. Various fabrication processes require planarization of layers on a substrate. For example, one fabrication step includes depositing a filler layer over a non-planar surface and planarizing the filler layer. For some applications, the filler layer is planarized until the top surface of the patterned layer is exposed. For example, a metal layer can be deposited on a patterned insulating layer to fill trenches and holes in the insulating layer. After planarization, the remainder of the metal in the trenches and holes of the patterned layer forms vias, plugs, and wires to provide conductive paths between thin film circui...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/66B24B1/00H01L21/30H01L21/321
CPCH01L22/20H01L22/26B24B37/005H01L22/14H01L21/7684B24B37/013G06N3/08
Inventor D·A·伊万诺夫许昆D·M·盖奇H·Q·李H·G·伊拉瓦尼D·E·本内特K·L·什里斯塔
Owner APPLIED MATERIALS INC
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