Monitoring semiconductor substrate test structures and test methods for integrated passive devices

A technology for integrating passive devices and test structures, applied in semiconductor devices, semiconductor/solid-state device parts, electric solid-state devices, etc., can solve problems such as reducing inductance and Q coefficient, small resistivity, high-frequency signal loss, etc.
CN102509725BActive Publication Date: 2016-06-29SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
Publication Date
2016-06-29

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Abstract

The invention provides a semiconductor substrate testing structure and testing method for monitoring integrated passive devices. The test structure for monitoring a semiconductor substrate for integrating passive devices according to the present invention includes: the two ends of the semiconductor circuit on the semiconductor substrate that are connected to the two ends of the inductance, capacitance and resistance tester are separated by a specific distance. The first metal wire and the second metal wire, wherein a test signal is added to one end of the LCR tester to obtain a C-V curve, and the doping concentration of the semiconductor substrate is determined through the C-V curve. According to the test structure for monitoring semiconductor substrates used for integrated passive devices, the C-V curves reflect the characteristics of metal-oxide-substrate capacitors, and the characteristics of metal-oxide-substrate capacitors are as the semiconductor substrate is doped. The C-V curve reflects the doping concentration of the semiconductor substrate. Furthermore, the change of the resistivity of the semiconductor substrate can be judged by the doping concentration of the semiconductor substrate.
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Description

technical field

[0001] The invention relates to the field of semiconductor device manufacturing, more specifically, the invention relates to a semiconductor substrate test structure for monitoring integrated passive devices and a method for monitoring the semiconductor substrate test for integrated passive devices. Background technique

[0002] In the semiconductor chip manufacturing process, for high-frequency (for example, not less than 2.4G) applications, it is necessary to integrate some passive devices in the circuit in many cases.

[0003] For this process of integrating passive devices for high-frequency applications, a high-resistance semiconductor substrate can provide high Q and high inductance. Therefore, it is desirable to use high-resistance semiconductor substrates for processes integrating passive devices for high-frequency applications.

[0004] However, the resistivity of semiconductor substrates usually used in the manufacture of semiconductor devices is r...

Claims

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