Time of flight sensor device and time of flight sensor arrangement

Abstract

The disclosure relates to a time of flight sensor device and a time of flight sensor arrangement. According to an embodiment, The time of flight sensor device comprises: a semiconductor substrate comprising a conversion region to convert an electromagnetic signal in photo-generated charge carriers, and comprising a substrate doping region having a n doping type, wherein the substrate doping regionextends from a first main surface region of the semiconductor substrate into the semiconductor substrate, wherein the semiconductor substrate has adjacent to the substrate doping region doped region,and wherein the substrate doping region at least partially forms the conversion region in the semiconductor substrate, a readout node arranged in the semiconductor substrate within the substrate doping region and having the n-doping type, wherein the readout node is configured to readout the photo generated charge carriers; and a control electrode arranged in the substrate doping region of the semiconductor substrate and in the substrate doping region and having the p-doping type.

Description

technical field [0001] Embodiments relate generally to the field of integrated circuits, and more particularly, to the field of optical sensor devices adapted to detect time-of-flight of electromagnetic signals. Accordingly, embodiments relate to time-of-flight (TOF) sensor devices. Other embodiments relate to N-epi time-of-flight sensor devices having an n-doped semiconductor region in a semiconductor substrate (eg, a bulk or epitaxially grown semiconductor substrate). Background technique [0002] Existing optical time-of-flight sensors employ a photogate structure for redirecting photogenerated charge carriers in a semiconductor substrate to a readout node for obtaining time-of-flight information of an amplitude-modulated electromagnetic signal generated by a radiation source, Wherein the electromagnetic signal is directed to the object and reflected to the time-of-flight sensor device. [0003] However, existing designs of optical time-of-flight sensor devices are limi...

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Problems solved by technology

[0003] However, existing designs of optical time-of-flight sensor devices are limited by the sensor signal quality (i.e., in the transfer efficiency of the photogenerated charge to the readout node(s), cannot achieve good signal-to-noise ratio and high temperature reliability. Operability (i.e., in terms of transfer efficiency of photogenerated charge to the readout node(s))

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