Method for testing recombination current of metal semiconductor interface

Abstract

The invention discloses a method for testing the recombination current of a metal semiconductor interface. The method for testing the recombination current of the metal semiconductor interface comprises the following steps: providing a test sample set, wherein test samples are first samples provided with first surfaces and second surfaces; detecting the first current density of the first surfacesin the first samples; forming first metal layers on the first surfaces so as to form second samples, wherein each first metal layer comprises N similar metal patterns, and first area ratios corresponding to different metal patterns are different; using a Suns-Voc tester to detect second current density corresponding to each metal pattern in the second samples; and based on the first current density, the first area ratio of each metal pattern and the corresponding second current density, obtaining the recombination current density of the first metal layer and the semiconductor interface. According to the scheme provided by the invention, the recombination current density testing for the metal semiconductor interface is realized simply and quickly, and the effect that the test result is trueand accurate is achieved.

Description

technical field [0001] The embodiment of the present invention relates to a current density testing technology, in particular to a testing method for the recombination current density of a metal-semiconductor interface. Background technique [0002] The recombination current density between metal and semiconductor interfaces has important applications in many fields. For example, the recombination of carriers in a solar cell is one of the most important factors affecting the efficiency of a solar cell, and the recombination at the metal-semiconductor interface occupies an important proportion. Accurate and convenient testing of the recombination current density at the metal-semiconductor interface plays an important role in improving battery design and optimizing process technology. [0003] At this stage, the metal paste separating the parallel line patterns is printed on the semiconductor material and sintered to form the sample to be tested. When measuring the recombina...

AI Technical Summary

Problems solved by technology

[0004] Since no metal can appear during the QSSPC test, the existing test method needs to corrode the sintered metal in the sample to be tested first, and the corrosion process will destroy the surface state of the non-metallic area

The corroded metal needs to be completely cleaned, and QSSPC has high requirements on the cleanliness of the cleaning, otherwise the test results will be inaccurate or the test data will not be available.

Moreover, since the metal will be corroded during the QSSPC test, the measured metal interface recombination current density is the interface recombination current density after corroding the metal, that is, the measured result is an equivalent value, not the real recombination current density of the metal interface

[0005] The composite current density test method of the metal interface in the prior art is complicated to operate, requires high cleaning and cleanliness, and the test results fluctuate greatly and the accuracy is not high

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