51results about "Current density measurements" patented technology

The invention relates to the technical field of bushing detection, and discloses a bushing insulation state detection method based on multi-parameter real-time monitoring. The method comprises the following steps: acquiring multi-dimensional monitoring data such as a partial discharge pulse sequence, dielectric loss angle tangent value fluctuation data and surface leakage current density distribution in a bushing operation environment in real time; carrying out insulation defect feature extraction on the data set, and generating an insulation defect distribution map containing a creeping discharge track, an internal air gap position mark and a carbonization channel density index; high-risk and potential defect areas are divided by adopting a dynamic threshold segmentation algorithm, boundary coordinates are determined, and an insulation state evaluation vector containing parameters such as a surface discharge intensity index and the like is constructed according to the boundary coordinates; and inputting the vector into a pre-trained insulation aging prediction model, and outputting a bushing residual insulation life estimated value and a defect development priority sequence. According to the method, all-around accurate monitoring and pre-judgment of the insulation state of the sleeve are achieved, and scientific support is provided for operation and maintenance decision making of the sleeve.

The invention discloses an electroplating production full-process monitoring system and method, and the method comprises the steps: monitoring a current density signal and plating solution temperature distribution data in an electroplating bath in real time, and generating a process coupling response value through density gradient analysis and hot spot migration track extraction; screening an abnormal process component by utilizing a process coupling response value, positioning a plating solution circulation transmission path and constructing a sensor network arrangement matrix; identifying a quality risk area through a big data processing technology, and extracting a coating thickness gradient field to determine a key monitoring node; adjusting equipment monitoring frequency according to the key monitoring nodes, forming a self-adaptive acquisition sequence and extracting a core monitoring set; performing energy consumption analysis by using the power change component, determining a monitoring period through load matching, and forming a monitoring convergence field; and a process control window is determined by using the monitoring convergence field and is converted into an intelligent monitoring instruction, so that comprehensive intelligent analysis and optimal management and control of production operation and maintenance of the electroplating bath are realized, and the quality stability and operation and maintenance efficiency of electroplating production are improved.

The invention provides a method for plasma bombardment energy distribution detection and life prediction of a silicon carbide part, and belongs to the technical field of semiconductor processing based on deep learning. The method comprises the following steps: firstly, arranging a magnetic probe array to obtain local electromagnetic parameters, and obtaining plasma luminescence characteristics by using optical imaging and spectrum acquisition equipment; preprocessing the acquired data to obtain multi-source fusion features; designing an energy distribution reconstruction framework based on a generative adversarial network, wherein a generator is used for deducing a three-dimensional energy distribution field of plasma; and inputting the three-dimensional energy distribution field time sequence characteristics into a bombardment dynamic characteristic modeling time sequence depth network, establishing a nonlinear mapping relation between energy distribution and material aging, further obtaining life prediction parameters, and finally obtaining the remaining service life of the silicon carbide part. According to the method, a complex degradation mechanism can be reflected more accurately, and the precision and robustness of life prediction are remarkably improved.

The invention relates to the technical field of NV color centers, and discloses an NV color center magnetic field and current measurement method and system. The method comprises the following steps: performing decomposition and noise reduction on the two to generate target three-dimensional data, and constructing a joint response equation by combining the resonant frequency offset and the fluorescence intensity change value of the target three-dimensional data; and finally, decoupling the equation to obtain a global magnetic field estimation value, and determining a current density distribution diagram according to the value and the vacuum magnetic conductivity. According to the method, the initial signal quality is improved through the quantum coherence enhanced pulse sequence, the influence of interference such as environmental thermal noise on the magnetic field signal is effectively weakened through decomposition noise reduction and joint response equation decoupling, and the magnetic field characteristics are accurately extracted, so that high-precision data support is provided for subsequent magnetic field analysis and current density distribution determination. The technical problem that in the prior art, interference such as environmental thermal noise exists generally, so that initially-collected magnetic field signals are mixed with a large amount of noise, and follow-up magnetic field and current analysis is seriously affected is solved.

The invention relates to the technical field of self-baking electrodes, in particular to an alternating-current variable-frequency self-baking electrode baking state prediction method for an iron alloy submerged arc furnace, which comprises the following steps: acquiring input parameters of a self-baking electrode, and simplifying an electromagnetic field and a heat transfer process related to the self-baking electrode into a two-dimensional axial symmetry state; constructing an electromagnetic field mathematical model, and obtaining expressions of the magnetic field intensity and the current density of the self-baking electrode; constructing a temperature field mathematical model of the self-baking electrode of the submerged arc furnace and an expression of electrode pressure release time; a finite volume method is utilized to discretize an electromagnetic field mathematical model and a temperature field mathematical model, and on the basis of input parameters and electromagnetic thermal boundary conditions, an implicit solution method which is good in convergence and stability and can achieve a large grid size is adopted to solve the magnetic field intensity, the current density, the temperature distribution and the electrode pressure release time of the self-baking electrode. The method can accurately and quickly predict the electrode pressure release time, and effectively reduces the roasting control cost of the self-roasting electrode of the submerged arc furnace.

The invention discloses a semiconductor device parameter testing method and structure, and belongs to the field of semiconductor testing. The testing method comprises the steps that a testing structure is provided, the testing structure comprises a two-dimensional electron gas channel and a multi-end testing pattern, testing branches are arranged at the positions, close to the two ends, in the two-dimensional electron gas channel, and the two ends of the two-dimensional electron gas channel and the testing branches are connected with the testing ends of the multi-end testing pattern in a one-to-one correspondence mode; respectively connecting the test ends connected with the two ends of the two-dimensional electron gas channel with a bias voltage and the ground, and measuring the channel current and the voltage of the test ends connected with the test branches; and calculating one or more of the source end contact resistance, the drain end contact resistance, the channel square resistance and the current surface density of the two-dimensional electron gas channel according to the size parameters of the two-dimensional electron gas channel and the measured voltage and channel current. The method is more accurate in test result, richer in data dimension and high in test flexibility.

The invention discloses a high-frequency transformer litz wire loss prediction method, and relates to the technical field of circuits, and the method comprises the steps: collecting an electromagnetic physical quantity, a structural physical quantity and a thermal physical quantity of a high-frequency transformer, so as to generate a multi-physical-quantity original feature set; carrying out litz wire equivalent copper foil conversion based on the multi-physical-quantity original feature set to obtain litz wire equivalent structure parameters; based on the litz wire equivalent structure parameters, determining three-dimensional magnetic field distribution of the litz wire, and decomposing the three-dimensional magnetic field distribution into a magnetic field component parallel to the strand and a magnetic field component perpendicular to the strand in combination with the litz wire torsion angle so as to generate a magnetic field component representation result; on the basis of the equivalent structure parameters of the Litz wire and the corresponding current harmonic characteristics, calculating the unit length loss of the Litz wire according to the magnetic field component characterization result so as to determine a basic loss value; and superposing the harmonic loss values to the basic loss value through the mutual impedance equivalent circuit of the litz wire to obtain the predicted loss value of the litz wire, thereby improving the loss prediction precision.

The application provides a training method and device of a current density distribution identification model, the method comprising: inputting a plurality of sampling source points into the current density distribution identification model, and obtaining a loss function in the current density distribution identification model, which is constructed based on a current density distribution function and an electric field integral equation; wherein the loss function comprises a hyperbolic tangent function, a derivative of the hyperbolic tangent function and a product of the Green function; performing series expansion on the hyperbolic tangent function in the loss function, and extracting singular terms from the electric field integral equation in the series expanded loss function to obtain a plurality of singular integrals; performing inner integral calculation and outer integral calculation on each high-order singular integral in the singular integrals to determine the current density distribution function corresponding to the minimum value of the loss function on all sampling source points. The application can quickly solve the singular integrals comprising the hyperbolic tangent function, the derivative of the hyperbolic tangent function and the product of the Green function to obtain the current density distribution function.

The invention discloses an ultra-thin strip current detection device and method based on pulsed excitation magnetic field detection, and belongs to the technical field of metal material processing and detection. The device comprises a main control module, a magnetic induction matrix acquisition module and a transverse reciprocating module. The magnetic induction matrix acquisition module is used for acquiring space magnetic field signals excited by pulse current on the surface of the ultra-thin strip; the transverse reciprocating module drives the sensor array to do reciprocating motion in the width direction of the strip, and in combination with conveying in the rolling direction of the strip, a composite scanning track of transverse reciprocating and longitudinal rolling is formed, so that a detection blind area caused by physical intervals of sensors is filled up; and the main control module is used for coordinating motion control and data acquisition, processing and inverting the acquired magnetic field signal, and reconstructing a two-dimensional current density distribution image in the plane of the ultra-thin strip. According to the invention, non-contact, high-resolution and visual detection of pulse current distribution in the electroplastic rolling process is realized, and an accurate basis is provided for process optimization and quality control.

A current sensing system comprises a sensor unit arranged in a sensing current path and configured to detect current density in the sensing current path, a switching unit configured to receive a control signal and, in response to receiving the control signal, to switch a bypass resistor in parallel with the sensor unit, thereby forming a controllable bypass current path.

A contactless current sensing system and method for high power density power electronics systems are provided. The contactless current sensing system is a two current sensor system in which two current sensors having substantially the same sensitivity are positioned on opposite sides of a current-carrying conductor.

The invention relates to the technical field of PEM electrolytic cell performance testing, and particularly discloses a PEM electrolytic cell performance testing system which comprises the steps that the maximum current density overestimation problem is recognized through a water flow velocity sensitivity test, and a dynamic working condition test matched with an actual operation scene is verified through dynamic mass transfer; determining the dynamic mass transfer limit and the dynamic mass transfer critical value of the gas diffusion layer, quantifying the aging attenuation rule of the dynamic mass transfer critical value of the gas diffusion layer based on historical data, and correcting the test deviation of the real-time aging of the unmatched gas diffusion layer through actual operation verification; the future parameter mismatch test is positioned and pre-corrected in advance through mismatch test prediction and parameter correction, the problem that the maximum current density is overestimated due to the fact that the dynamic mass transfer limitation and the aging influence of the gas diffusion layer are not considered in the existing static test is solved, dynamic adaptation of the aging state of the gas diffusion layer and the test parameters is achieved, and the test accuracy is improved. And the deviation between a test result and actual operation is reduced.

The application discloses a kind of in-pipe electrode head anode body consumption state real-time monitoring system, it is related to electrode wear monitoring technical field, the system includes data acquisition module, data processing module, modeling module, life prediction analysis module and risk early warning module;By arranging multiple micro-sensing nodes in electrode pipeline interior, current density distribution, potential gradient and electrode-medium interface sense resistance value are collected;After normalization processing, loss characteristic map is constructed, and loss mapping matrix is generated;Supervised learning is carried out using long short-term memory residual network, and real-time consumption state weight value is output;Combined with operating condition parameters, the remaining life of each region is predicted based on Bayesian dynamic model, and critical wear area is labeled;When life is lower than preset threshold and consumption acceleration exceeds set value, output anode head replacement early warning instruction;The application realizes high-precision, dynamic monitoring and intelligent early warning of electrode anode body wear state, with good real-time and adaptability.

The application discloses a kind of measurement methods of interfacial exchange current density, belong to electrochemical test field.The method for realizing of the present application is: using self-built three-electrode single particle electrochemical test system to measure the electrochemical impedance spectroscopy of multiple micron scale particles, obtain the current density of multiple single crystal particles;X-ray diffraction technique is used to obtain material crystal structure information;Using high-resolution transmission electron microscopy to measure the crystal face type of any exposed surface of single particle;The three-dimensional reconstruction of single crystal particle is carried out to obtain the geometric information of particle;Through crystal structure information, the crystal face type information of exposed surface and the angle information between each exposed surface, the crystal face type of all exposed surfaces is calibrated;According to the crystal face type of all exposed surfaces of multiple particles, the area of corresponding exposed surface and the current density of particle, the exchange current density of different crystal faces of crystal material is calculated.The present application can be used for the measurement of micron scale crystal material crystal face exchange current density, quantitative analysis of the electrochemical activity of material.

An apparatus for obtaining ion energy distribution measurements in a plasma processing system comprising a substrate, an ion energy sensor and associated control circuitry disposed in the substrate, and a conductive enclosure disposed in the substrate and surrounding the ion energy sensor and control circuitry such that the substrate at least partially surrounds the conductive enclosure.

The present invention relates to a high-frequency driven high-speed diagnostic electrostatic probe system and a method thereof and, more specifically, provides a high-frequency driven high-speed diagnostic electrostatic probe system and a method thereof, wherein a high-speed diagnosis for the characteristics of plasma is enabled by using a fitting function without a high impedance choke filter after a plurality of pieces of current waveform data, which are measured by applying a high-frequency bias voltage to a probe while shifting the phase of same, are phase-retrieved and averaged and then processed in accordance with a preset methodology.

The application discloses a superconducting current density measurement method, a control system, a storage medium and an electronic device, and comprises the following steps: determining the corresponding relationship between the superconducting current density of a to-be-measured sample and a dynamic inductance, and connecting the to-be-measured sample to a resonance circuit; obtaining the dynamic inductance, and determining the resonance frequency according to the dynamic inductance; monitoring the resonance frequency, determining the change of the dynamic inductance according to the change of the resonance frequency, and then obtaining the superconducting current density corresponding to the resonance frequency according to the corresponding relationship; the measurement method designed in the application is not limited by the size of the volume of the to-be-measured sample, the change of the superconducting current density can be directly monitored by monitoring the change of the resonance frequency temperature or the magnetic field, the accurate measurement of the superconducting current density on the mesoscopic scale (micro-nanometer level) sample can be carried out, and the problem of inaccurate measurement caused by weak signals in the prior art is overcome.

The present invention relates to a method for estimating the resistance of a shunt resistor (502) in an electric energy storage system (500) comprising an electric energy storage (501). A current (I) flows through the electric energy storage (501) and the shunt resistor (502) when powering a load. The method comprises: providing a measurement current (I meas) through a reference resistor (R ref), the measurement current (I meas) flowing also through the shunt resistor (502); measuring a voltage drop over the shunt resistor (502) resulting from the measurement current (I meas); measuring a voltage drop over the reference resistor (R ref) resulting from the measurement current (I meas); and estimating a resistance (R shunt) of the shunt resistor (502) utilizing the measured voltage drop over the shunt resistor (502), the measured voltage drop over the reference resistor (R ref) and the resistance of the reference resistor (R ref).

According to the present invention, the current density distribution in an electronic device is determined, which comprises a first and a second electrode and a layer of two-dimensional conductive material extending between the first and the second electrode. The total current through the electrodes is measured when the device is in operation, and then a first current measurement probe is placed at a number of positions as close as possible to the interface between the two-dimensional material and the first electrode. The probe is coupled to the same voltage as the first electrode, thereby locally shunting the current. The same is done at the interface between the channel and the second electrode. In this way boundary conditions are determined for the current, and assuming that the current density vector is orthogonal to the interface, this yields a boundary condition for the current density vector. Finally, the continuity equation is solved taking the boundary conditions into account.

The invention relates to a current density testing method and device for an electrode foil corrosion production line and computer equipment. The method comprises the following steps: controlling an electrolytic bath in an electrode foil corrosion production line to carry out a corrosion power-up static test on a static light foil to obtain a static corrosion foil; controlling a sampling device in the electrode foil corrosion production line to uniformly divide and sample the static corrosion foil to obtain a plurality of corrosion foil sample wafers, and obtaining the loss weight of each corrosion foil sample wafer after the corrosion power-up static test compared with the loss weight before the corrosion power-up static test; the length of the light foil is matched with the length of the polar plate in the electrolytic bath, and all the corrosion foil sample wafers are in one-to-one correspondence with all areas of the polar plate; and for each corrosion foil sample wafer, determining the current density of the corrosion foil sample wafer according to the loss weight of the corrosion foil sample wafer and the preset current density of the production line, and obtaining the current density corresponding to different areas of the polar plate. The method is beneficial to improving the current density measurement precision.

The invention discloses a frequency spectrum drift feedback method applied to plasma density diagnosis for improving real-time phase detection precision. According to the method, an FPGA is used as a core platform, and reference and measurement signals containing three frequency components are collected through an ADC; after cross-clock domain processing and ping-pong storage, windowing FFT is carried out to obtain frequency spectrum information; extracting frequency positions and dynamic tracking change values of three peak values in the two paths of signals through a multi-spectral peak identification and tracking algorithm, and transmitting the frequency positions and the dynamic tracking change values to an upper computer to draw a trend curve; and comparing the actual frequency with the theoretical window width, feeding back a frequency spectrum drift early warning if the actual frequency exceeds the range, otherwise, adaptively calculating the window width for each frequency point to carry out dynamic filtering, and finally outputting three paths of phase differences through IFFT (Inverse Fast Fourier Transform), complex conjugate multiplication and arc tangent operation. Real-time high-precision calculation of the phase difference of the multi-frequency signals is achieved, spectrum drift can be processed in a self-adaptive mode, spectrum peak overlapping is effectively prevented, and the real-time performance, precision and reliability of plasma density diagnosis are remarkably improved.

A display device and an electronic device including the display device are disclosed. The display device may include a red pixel, a green pixel, and a blue pixel, each including transistors and an organic light emitting element, wherein, with respect to the organic light emitting element, variance (ΔCap′max) of capacitance at a maximum value of Equation 10 has a value of equal to or greater than 100%;Δ⁢Capusx′(c,T)=<semantics definitionURL="">❘<annotation encoding="Mathematica">"\[LeftBracketingBar]"< / annotation>< / semantics>Capmax′(c,T)-Capmax(c,T0)Capmax′(c=Blue,T)-Capmax(c=Blue,T0)<semantics definitionURL="">❘<annotation encoding="Mathematica">"\[RightBracketingBar]"< / annotation>< / semantics>×Capmax′(c,T)Capmax(c,T0) / Δ⁢Vmax(c,T)Equation⁢ 10variable c is a color, T is a temperature, To is 25° C., Cap is capacitance, ΔCap′max(c, T) satisfies Equation 9,Δ⁢Capmax′(c,T)=Δ⁢Capmax(c,T) / Δ⁢Vmax(c,T),Equation⁢ 9variance (ΔCap(c, T)) of capacitance expressed based on a maximum value satisfies Equation 6,Δ⁢Cap(c,T)=<semantics definitionURL="">❘<annotation encoding="Mathematica">"\[LeftBracketingBar]"< / annotation>< / semantics>Capmax′(c,T)-Capmax(c,T0)Capmax′(c=Blue,T)-Capmax(c=Blue,T0)<semantics definitionURL="">❘<annotation encoding="Mathematica">"\[RightBracketingBar]"< / annotation>< / semantics>×Capmax′(c,T)Capmax(c,T0),Equation⁢ 6and variance (ΔVmax) of a maximum voltage satisfies Equation 8.Δ⁢Vmax(c,T)=Vmax(c,T) / Vmax(c,T0).Equation⁢ 8

The invention relates to the technical field of solar cells, and provides a solar cell short-circuit current density testing method, electronic equipment and a storage medium. The method comprises the following steps: determining external quantum efficiency values of a to-be-detected battery piece under the action of light sources with different wavelengths; the different wavelength light sources comprise a first wavelength light source and a second wavelength light source, and the external quantum efficiency value under the action of the first wavelength light source is determined according to a first electroluminescent image of the to-be-detected battery piece, a second electroluminescent image of the standard battery piece and an external quantum efficiency value of the standard battery piece; the external quantum efficiency value under the action of the second wavelength light source is determined according to the first electroluminescent image and the blackbody radiation spectrum; the first wavelength is smaller than the second wavelength; and determining the short-circuit current density of the to-be-detected battery piece according to the external quantum efficiency values under the action of the light sources with different wavelengths. Therefore, the accuracy of testing the short-circuit current density of the battery piece to be tested can be improved.

A method of controlling corrosion in a metallic structure subjected to cathodic protection is disclosed. The method includes providing a probe that is capable of simulating at least one condition of the metallic structure and measuring at least one characteristic at the probe indicative of one or more states of the probe. At least one parameter of the cathodic protection applied to the metallic structure is controlled in response to the at least one measured characteristic. The disclosure also relates to a control system for controlling a corrosion protection system and to a cathodic protection system applied to an apparatus for monitoring and controlling corrosion in a metallic structure.

To shield components of an imitation wafer probe used to measure the incident charged particle current density and energy distribution reaching the probe's surface during plasma processing.SOLUTION: A device for obtaining ion energy distribution measurements in a plasma processing system comprises a substrate, a plurality of ion energy sensors each having associated control circuitry disposed within the substrate, and a conductive enclosure, arranged within the substrate, enclosing each ion energy sensor and the associated control circuitry such that the substrate at least partially surrounds the conductive enclosure.SELECTED DRAWING: Figure 1

The invention discloses a balance test method for a residual current type electrical fire monitoring detector, and relates to the technical field of electrical fire monitoring, and the method comprises the steps: collecting the current time sequence data of a detector, and carrying out the preprocessing; inputting the preprocessed current time sequence data of the detector into an LSTM deep learning model, extracting current time sequence characteristics, performing dynamic prediction analysis on current distribution of a detector winding, and outputting a detector current density distribution matrix; and carrying out harmonic characteristic analysis on the detector current density distribution matrix, identifying a negative sequence harmonic propagation direction and an amplitude ratio, calculating an inductance parameter adjusting quantity and a capacitance parameter adjusting quantity by adopting a PID control algorithm, and generating a current suppression instruction set. According to the method, harmonic characteristic analysis is carried out on the current density distribution matrix of the detector, and the current suppression instruction set is generated by adopting the PID control algorithm, so that precise compensation for harmonic interference is realized, and the pertinence of harmonic suppression and the stability of balance control are enhanced.

Provided is a semiconductor sample evaluation method which includes: acquiring a decay curve by subjecting a semiconductor sample being evaluated to measurement by means of a photoconductive decay method for multiple times while changing a surface charge density; applying signal data processing using a model formula including an exponential decay term and a constant term to at least one decay curve among the decay curves obtained by the multiple measurements; obtaining a recombination lifetime τeff of the semiconductor sample from an exponential decay formula obtained by the signal data processing; obtaining a quadratic function, in which a surface charge density-related value is represented by a variable x and a value related to the constant term is represented by a variable y, from measurement results obtained by the multiple measurements; and obtaining a surface recombination lifetime τs of the semiconductor sample from the quadratic function.

The application discloses a method for testing and extracting carrier injection barrier in dielectric, which is based on the relationship between the injection current density and the electric field intensity obtained by the injection charge quantity change rate and the electric field change, and the testing and extraction of the dielectric carrier injection barrier, and comprises the following steps: preparing a dielectric sample; performing electrode unipolar carrier injection test; calculating the conductive current of the carrier migration in the dielectric and the displacement current at the electrode and dielectric interface; calculating the carrier injection current density at the electrode and dielectric interface; correlating the current density and the electric field intensity at the electrode to obtain the carrier injection current density-electric field intensity relationship curve at the electrode interface in the dielectric; performing analysis and fitting to extract the carrier injection barrier. The testing and extraction method can truly reflect the electrical performance parameters of the dielectric under different electric field intensity working states, provides parameters for the charge transport simulation in the dielectric, and has significant scientific and economic benefits.

An ion energy screening device and method includes: a pre-stage fixedly connected to the head of an insulating sleeve; n insulating rings and perforated grids spaced axially along the inner side of the insulating sleeve, forming a multi-cavity assembly; multiple through holes machined on the perforated grid as mesh openings for plasma passage; a collecting electrode also installed on the inner side of the insulating sleeve, located at the rear end of the multi-cavity assembly; an end cap fixedly connected to the tail of the insulating sleeve, used to seal the tail of the insulating sleeve; the collecting electrode for collecting screened ions; and a ceramic gasket fitted onto the outer side of the end cap. This invention achieves the effect of ion screening and electron exclusion by applying different voltages to multiple perforated grids. It can also control the acquisition of ions with a specific ion energy range. In vacuum ion plating processes, it can be used to detect the ion energy range and control the ion energy to obtain films with different physical properties.

The application discloses a high-frequency transformer Litz wire loss prediction method, and relates to the technical field of circuits, which comprises the following steps: collecting electromagnetic physical quantities, structural physical quantities and thermal physical quantities of a high-frequency transformer to generate a multi-physical quantity original feature set; performing Litz wire equivalent copper foil conversion based on the multi-physical quantity original feature set to obtain Litz wire equivalent structural parameters; determining the three-dimensional magnetic field distribution of the Litz wire based on the Litz wire equivalent structural parameters, and decomposing the three-dimensional magnetic field distribution into a magnetic field component parallel to the strand and a magnetic field component perpendicular to the strand in combination with the Litz wire twist angle to generate a magnetic field component representation result; calculating the unit length loss of the Litz wire according to the magnetic field component representation result based on the equivalent structural parameters of the Litz wire and the corresponding current harmonic characteristics to determine a basic loss value; and superimposing each harmonic loss value on the basic loss value through the mutual impedance equivalent circuit of the Litz wire to obtain a predicted Litz wire loss value, so that the loss prediction precision is improved.