Method for testing current distribution uniformity inside single voltage-dependent resistor valve block within wide temperature range

A varistor and current distribution technology, applied in the direction of current density measurement, etc., can solve the problems of overheating, breakdown of the resistor, and the inability to test the current uniformity of the zinc oxide varistor valve.

Active Publication Date: 2016-04-20
TSINGHUA UNIV
View PDF6 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] When a voltage is applied, the current field distribution inside the zinc oxide non-linear resistor is usually non-uniform, which leads to a series of problems, such as local overheating inside the resistor, breakdown of weak links, etc.
However, the existing research conditions are unable to test the uniformity of the internal current of the zinc monooxide varistor valve, so a new test method for testing the uniformity of the internal current distribution of the monolithic varistor valve is proposed. The relevant experimental equipment is very important
The applicant of this patent once proposed a method for testing the uniformity of current distribution inside the single-piece varistor valve (patent application number: 201310269347.1), but this method still has certain shortcomings, that is, the measurement of the uniformity of current distribution inside the resistor valve In the process, it is impossible to control the influence of the ambient temperature around the resistance valve on the measurement

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for testing current distribution uniformity inside single voltage-dependent resistor valve block within wide temperature range
  • Method for testing current distribution uniformity inside single voltage-dependent resistor valve block within wide temperature range
  • Method for testing current distribution uniformity inside single voltage-dependent resistor valve block within wide temperature range

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] According to the method for testing the uniformity of current distribution inside the varistor valve with a wide temperature range introduced in the patent specification of the present invention, the zinc oxide varistor valve was tested for the uniformity of current distribution. The specific process is as follows:

[0034] (1) For the thickness d=2mm, the upper and lower surface areas are each A=13.75mm 2 Polish the upper and lower surfaces of the zinc oxide varistor valve plate, so that the roughness of the upper and lower surfaces of the zinc oxide varistor valve plate is less than 1 micron;

[0035] (2) Take the zinc oxide varistor sample obtained in step (1) as the base material, coat the upper and lower surfaces of the polished sample with photoresist, and use photolithography technology to transfer the shape and structure of the mask to the surface of the sample After the vacuum coating process, a plurality of micro silver electrodes with a thickness of 100 nanometers ...

Embodiment 2

[0043] According to the method for testing the uniformity of current distribution inside the varistor valve with a wide temperature range introduced in the patent specification of the present invention, the zinc oxide varistor valve was tested for the uniformity of current distribution. The specific process is as follows:

[0044] (1) For the thickness d=2mm, the upper and lower surface areas are each A=13.80mm 2 Polish the upper and lower surfaces of the zinc oxide varistor valve plate, so that the roughness of the upper and lower surfaces of the zinc oxide varistor valve plate is less than 1 micron;

[0045] (2) Take the zinc oxide varistor sample obtained in step (1) as the base material, coat the upper and lower surfaces of the polished sample with photoresist, and use photolithography technology to transfer the shape and structure of the mask to the surface of the sample After the vacuum coating process, a plurality of micro silver electrodes with a thickness of 100 nanometers ...

Embodiment 3

[0053] According to the method for testing the uniformity of current distribution inside the varistor valve with a wide temperature range introduced in the patent specification of the present invention, the zinc oxide varistor valve was tested for the uniformity of current distribution. The specific process is as follows:

[0054] (1) For the thickness d=2mm, the upper and lower surface areas are each A=13.78mm 2 Polish the upper and lower surfaces of the zinc oxide varistor valve plate, so that the roughness of the upper and lower surfaces of the zinc oxide varistor valve plate is less than 1 micron;

[0055] (2) Take the zinc oxide varistor sample obtained in step (1) as the base material, coat the upper and lower surfaces of the polished sample with photoresist, and use photolithography technology to transfer the shape and structure of the mask to the surface of the sample After the vacuum coating process, a plurality of micro silver electrodes with a thickness of 100 nanometers ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a method for testing current distribution uniformity inside a single voltage-dependent resistor valve block within a wide temperature range and belongs to the technical field of electrical engineering material. The method comprises steps of: preparing micro silver electrodes on the top surface and the bottom surface of a zinc oxide voltage-dependent resistor valve block by using photoetching and sputtering; enabling the bottom surface of the zinc oxide voltage-dependent resistor valve block to adhere to a thin lead plate, uniformly dividing the top surface of the zinc oxide voltage-dependent resistor valve block into a plurality of units with equal areas, and enabling microprobes to be in contact with the silver electrodes respectively; applying voltage between the thin lead plate in contact with the bottom surface and the microprobes or a thin lead plate in contact with the top surface, measuring corresponding current to obtain a volt-ampere characteristic curve using current density as a abscissa and electric field intensity as a ordinate, and selecting a corresponding current density value from the volt-ampere characteristic curve to solve the current ununiformity of the zinc oxide voltage-dependent resistor valve block. In a measuring process, the temperature of environment is continuously and accurately adjustable. The method is capable of effectively evaluating the uniformity of the internal structure and the performance of the zinc oxide voltage-dependent resistor valve block at specific temperature in order to test and research an influence of current distribution uniformity on the operating characteristic of zinc oxide.

Description

Technical field [0001] The invention relates to a method for testing the uniformity of current distribution inside a varistor valve plate in a wide temperature range, in particular to a method for testing the uniformity of current distribution inside a zinc oxide varistor valve plate in a wide temperature range, and belongs to the technical field of electrical materials. Background technique [0002] Zinc oxide non-linear resistors (referred to as zinc oxide resistors or resistors) have excellent non-linear voltage-current (UI) characteristics and surge energy absorption capabilities, and are widely used as surge energy absorbers in power systems and electronic equipment The core component of the device. [0003] When voltage is applied, the current field distribution inside the zinc oxide non-linear resistor is usually non-uniform, which leads to a series of problems, such as local overheating inside the resistor, breakdown of weak links and so on. However, the existing research ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G01R19/08
CPCG01R19/08
Inventor 何金良胡军程晨璐曾嵘张波余占清
Owner TSINGHUA UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap