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Test method for uniformity of internal current distribution in wide temperature range piezoresistor valve

A piezoresistor and current distribution technology, which is applied in the direction of current density measurement, etc., can solve the problems of overheating of the resistance sheet, the influence of the resistance valve sheet being unable to control the influence of the resistance valve sheet measurement, breakdown, etc.

Active Publication Date: 2018-12-07
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] When a voltage is applied, the current field distribution inside the zinc oxide non-linear resistor is usually non-uniform, which leads to a series of problems, such as local overheating inside the resistor, breakdown of weak links, etc.
However, the existing research conditions are unable to test the uniformity of the internal current of the zinc monooxide varistor valve, so a new test method for testing the uniformity of the internal current distribution of the monolithic varistor valve is proposed. The relevant experimental equipment is very important
The applicant of this patent once proposed a method for testing the uniformity of current distribution inside the single-piece varistor valve (patent application number: 201310269347.1), but this method still has certain shortcomings, that is, the measurement of the uniformity of current distribution inside the resistor valve In the process, it is impossible to control the influence of the ambient temperature around the resistance valve on the measurement

Method used

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  • Test method for uniformity of internal current distribution in wide temperature range piezoresistor valve
  • Test method for uniformity of internal current distribution in wide temperature range piezoresistor valve
  • Test method for uniformity of internal current distribution in wide temperature range piezoresistor valve

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Embodiment 1

[0033] According to the method for testing the uniformity of current distribution inside the varistor valve with a wide temperature range introduced in the patent specification of the present invention, the zinc oxide varistor valve was tested for the uniformity of current distribution. The specific process is as follows:

[0034] (1) For the thickness d=2mm, the upper and lower surface areas are A=13.75mm 2 The upper and lower surfaces of the zinc oxide varistor valve plate are polished so that the roughness of the upper and lower surfaces of the zinc oxide varistor valve plate is less than 1 micron;

[0035] (2) Use the zinc oxide varistor sample obtained in step (1) as the base material, coat the upper and lower surfaces of the polished sample with photoresist, and use photolithography to transfer the shape and structure of the mask plate to the surface of the above sample , after vacuum coating treatment, a plurality of micro-silver electrodes with a thickness of 100 nanom...

Embodiment 2

[0043] According to the test method for the uniformity of current distribution inside the wide temperature range piezoresistor valve plate introduced in the patent specification of the present invention, the zinc oxide varistor valve plate was tested for the influence of current distribution uniformity, and the specific process is as follows:

[0044] (1) For the thickness d=2mm, the upper and lower surface areas are A=13.80mm 2 The upper and lower surfaces of the zinc oxide varistor valve plate are polished so that the roughness of the upper and lower surfaces of the zinc oxide varistor valve plate is less than 1 micron;

[0045] (2) Use the zinc oxide varistor sample obtained in step (1) as the base material, coat the upper and lower surfaces of the polished sample with photoresist, and use photolithography to transfer the shape and structure of the mask plate to the surface of the above sample , after vacuum coating treatment, a plurality of micro-silver electrodes with a t...

Embodiment 3

[0053] According to the test method for the uniformity of current distribution inside the wide temperature range piezoresistor valve plate introduced in the patent specification of the present invention, the zinc oxide varistor valve plate was tested for the influence of current distribution uniformity, and the specific process is as follows:

[0054] (1) For the thickness d=2mm, the upper and lower surface areas are A=13.78mm 2 The upper and lower surfaces of the zinc oxide varistor valve plate are polished so that the roughness of the upper and lower surfaces of the zinc oxide varistor valve plate is less than 1 micron;

[0055] (2) Use the zinc oxide varistor sample obtained in step (1) as the base material, coat the upper and lower surfaces of the polished sample with photoresist, and use photolithography to transfer the shape and structure of the mask plate to the surface of the above sample , after vacuum coating treatment, a plurality of micro-silver electrodes with a t...

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Abstract

The invention relates to a method for testing current distribution uniformity inside a single voltage-dependent resistor valve block within a wide temperature range and belongs to the technical field of electrical engineering material. The method comprises steps of: preparing micro silver electrodes on the top surface and the bottom surface of a zinc oxide voltage-dependent resistor valve block by using photoetching and sputtering; enabling the bottom surface of the zinc oxide voltage-dependent resistor valve block to adhere to a thin lead plate, uniformly dividing the top surface of the zinc oxide voltage-dependent resistor valve block into a plurality of units with equal areas, and enabling microprobes to be in contact with the silver electrodes respectively; applying voltage between the thin lead plate in contact with the bottom surface and the microprobes or a thin lead plate in contact with the top surface, measuring corresponding current to obtain a volt-ampere characteristic curve using current density as a abscissa and electric field intensity as a ordinate, and selecting a corresponding current density value from the volt-ampere characteristic curve to solve the current ununiformity of the zinc oxide voltage-dependent resistor valve block. In a measuring process, the temperature of environment is continuously and accurately adjustable. The method is capable of effectively evaluating the uniformity of the internal structure and the performance of the zinc oxide voltage-dependent resistor valve block at specific temperature in order to test and research an influence of current distribution uniformity on the operating characteristic of zinc oxide.

Description

technical field [0001] The invention relates to a method for testing the uniformity of current distribution inside a varistor valve plate with a wide temperature range, in particular to a method for testing the uniformity of current distribution inside a zinc oxide varistor valve plate with a wide temperature range, and belongs to the technical field of electrical materials. Background technique [0002] Zinc oxide nonlinear resistors (referred to as zinc oxide resistors or resistors) have excellent nonlinear voltage-current (U-I) characteristics and surge energy absorption capabilities, and are widely used as surge arresters for power systems and surge energy absorption for electronic equipment The core component of the device. [0003] When a voltage is applied, the current field distribution inside the zinc oxide non-linear resistor is usually non-uniform, which leads to a series of problems, such as local overheating inside the resistor, breakdown of weak links, and so o...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01R19/08
CPCG01R19/08
Inventor 何金良胡军程晨璐曾嵘张波余占清
Owner TSINGHUA UNIV
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