CNT and silver nanometer wire recombination current expanding layer LED and manufacturing method thereof

A technology of light-emitting diodes and silver nanowires, applied in circuits, electrical components, semiconductor devices, etc., can solve problems such as large square resistance, low light transmittance, and restricted applications, and achieve low square resistance and improve efficiency.

Active Publication Date: 2014-08-27
BEIJING UNIV OF TECH
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  • Abstract
  • Description
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Problems solved by technology

The conductivity of a single carbon nanotube itself is very high, about 4×10 5 S cm ‐1 , but when multiple carbon nanotubes are used to form a film, because the contact resistance between the carbon nanotube walls is very large, when the light transmittance of the carbon nanotube film is about 80%, the square resistance is about 10 3 Ω / sq order of magnitude, relative to the light transmittance of the ITO film is about 85%, the square resistance is 10Ω / sq, the square resistance is too large to show the advantages of carbon nanotubes as current extension
Silver nanowires are similar to carbon nanotubes. As a metal, a single silver nanowire has high electrical conductivity. However, after forming a thin film, the square resistance and light transmission of silver nanowires are a pair of contradictions. The smaller the square resistance, the more light transmittance. The lower the rate, according to literature reports, when the light transmittance of the silver nanowire film is 80%, the square resistance is about several hundred Ω / sq, which greatly restricts its application in the current spreading layer of light-emitting diodes.

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  • CNT and silver nanometer wire recombination current expanding layer LED and manufacturing method thereof
  • CNT and silver nanometer wire recombination current expanding layer LED and manufacturing method thereof
  • CNT and silver nanometer wire recombination current expanding layer LED and manufacturing method thereof

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preparation example Construction

[0029] The preparation method of the carbon nanotube silver nanowire composite current spreading layer light emitting diode includes the following steps:

[0030] 1. First, an n-type current confinement layer 106, an active region 105, a p-type current confinement layer 104 and a window layer 103 are sequentially grown on a substrate by a metal organic chemical vapor deposition method;

[0031] 2. Laying carbon nanotubes on the window layer 103 by manual or machine stretching, the resulting carbon nanotube layer has a thickness of 80-100 nm, and a light transmittance of 85%-90%.

[0032] 3. The silver nanowires are suspended in isopropanol or other volatile solvents with a mass fraction of 1-2 mg / mL, and they are evenly covered on the surface of the carbon nanotube film by drip coating or suspension coating. In N 2 Under protection or heating under vacuum, the solvent is volatilized, and the silver nanowires are compounded on the current spreading layer of carbon nanotubes; the squar...

specific Embodiment approach 1

[0038] 1. First, an n-type current confinement layer 106, an active region 105, a p-type current confinement layer 104, and a window layer 103 are sequentially grown on a substrate by a metal organic chemical vapor deposition method;

[0039] 2. Lay carbon nanotubes on the window layer 103 by manual or machine stretching;

[0040] 3. The silver nanowires are suspended in isopropanol with a mass fraction of 2 mg / mL, and are uniformly covered on the surface of the carbon nanotube film by drip coating; the thickness of the obtained carbon nanotube layer is 80 nm, and the light transmittance is 85%.

[0041] 4. Then in N 2 It is heated to 70°C under protection to volatilize the solvent, and silver nanowires are compounded in the current spreading layer of carbon nanotubes. The square resistance of the carbon nanotube composite silver nanowire composite film is 50Ω / sq, and the light transmittance is 80%;

[0042] 5. Use photoresist as a mask, make electrode patterns with photoresist on the...

specific Embodiment approach 2

[0047] 1. First, an n-type current confinement layer 106, an active region 105, a p-type current confinement layer 104 and a window layer 103 are sequentially grown on a substrate by a metal organic chemical vapor deposition method;

[0048] 2. Laying carbon nanotubes on the window layer 103 by machine stretching; the resulting carbon nanotube layer has a thickness of 80 nm and a light transmittance of 90%.

[0049] 3. The silver nanowires are suspended in isopropanol with a mass fraction of 2mg / mL, and are evenly covered on the surface of the carbon nanotube film by suspension coating;

[0050] 4. Then heat to 70°C under vacuum to volatilize the solvent to obtain silver nanowires composited in the current spreading layer of carbon nanotubes. The square resistance of the carbon nanotube composite silver nanowire composite film is 50Ω / sq, and the light transmittance is 80%;

[0051] 5. Sputter or evaporate Ti / Au on the window layer 103, with a thickness of 15nm / 300nm, protect the elect...

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Abstract

The invention discloses a CNT and silver nanometer wire recombination current expanding layer LED and a manufacturing method thereof. A current expanding layer is composed of a super-aligned CNT and a silver nanometer wire. The CNT and silver nanometer wire recombination current expanding layer LED comprises a substrate, an n-type current limit layer, an active area, a p-type current limit layer and a window layer which are stacked longitudinally in sequence, further comprises a p electrode and an n electrode, and is characterized in that the window layer is paved with the CNT and silver nanometer wire recombination current expanding layer. The LED can enable current to be more evenly diffused to the active area from the electrodes so as to improve the photoelectric conversion efficiency.

Description

Technical field [0001] The invention relates to a novel light-emitting diode structure, in particular to a light-emitting diode structure with a carbon nanotube silver nanowire composite film used for current expansion, and belongs to the technical field of semiconductor optoelectronics. Background technique [0002] Light-emitting diodes have outstanding characteristics such as long life, energy saving, and environmental protection. They have been widely used in large-screen color displays, automotive lighting, traffic signals, multimedia displays, and optical communications, and have broad development potential in the field of lighting. For light-emitting diodes, with the continuous improvement and progress of high-quality material growth technology and device structure design, current expansion has become an important factor limiting the luminous efficiency. When current is injected from the electrode into the light-emitting diode, due to the limitation of lateral resistance a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/42H01L33/00
CPCH01L33/42H01L2933/0016
Inventor 郭霞郭春威
Owner BEIJING UNIV OF TECH
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