Method and device for testing metal semiconductor interface recombination current density

Abstract

The invention discloses a method and device for testing metal semiconductor interface recombination current density. The method includes: providing a testing sample group, wherein each testing sampleis a first-state sample with a first surface and a second surface; detecting the first current density of the first surface of each first-state sample; forming a first metal layer on each first surface to form a second-state sample; each first metal layer comprises N similar metal patterns, and the first area ratios corresponding to different metal patterns are different; detecting second currentdensity corresponding to each metal pattern in each second-state sample; acquiring the recombination current density of each first metal layer and a semiconductor interface according to the corresponding first current density, the first area ratio of each metal pattern and the corresponding second current density. The method and device has the advantages that the metal semiconductor interface recombination current density can be tested simply and fast, and the testing result is real and accurate.

Description

technical field [0001] Embodiments of the present invention relate to current density testing technology, and in particular to a testing method and current density testing device for recombination current density at a metal-semiconductor interface. Background technique [0002] The recombination current density between metal and semiconductor interfaces has important applications in many fields. For example, the recombination of carriers in a solar cell is one of the most important factors affecting the efficiency of a solar cell, and the recombination at the metal-semiconductor interface occupies an important proportion. Accurate and convenient testing of the recombination current density at the metal-semiconductor interface plays an important role in improving battery design and optimizing process technology. [0003] At this stage, the metal paste separating the parallel line patterns is printed on the semiconductor material and sintered to form the sample to be tested. ...

AI Technical Summary

Problems solved by technology

[0004] Since no metal can appear during the QSSPC test, the existing test method needs to corrode the sintered metal in the sample to be tested first, and the corrosion process will destroy the surface state of the non-metallic area

The corroded metal needs to be completely cleaned, and QSSPC has high requirements on the cleanliness of the cleaning, otherwise the test results will be inaccurate or the test data will not be available.

Moreover, since the metal will be corroded during the QSSPC test, the measured metal interface recombination current density is the interface recombination current density after corroding the metal, that is, the measured result is an equivalent value, not the real recombination current density of the metal interface

[0005] The composite current density test method of the metal interface in the prior art is complicated to operate, requires high cleaning and cleanliness, and the test results fluctuate greatly and the accuracy is not high

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