IGBT capable of realizing localized service lifetime controlling and manufacturing method thereof

Abstract

The invention brings forward an insulated gate bipolar transistor (IGBT) capable of realizing localized service lifetime controlling and a manufacturing method thereof. The IGBT comprises a current collection region; a buffer layer is formed on the current collection zone; and a drift region is formed on the buffer layer. At least one low-service life high recombination layer is formed between the current collection region and the drift region; and a recombination center is arranged in the low-service life high recombination layer, so that the service life of the carrier is reduced. Besides, well regions are formed in the drift region; emitter regions are formed in the well regions; a gate dielectric layer, a grid electrode and an emitter are successively formed on the drift region; and a collector is formed under the current collection region. According to the invention, because at least one low-service life high recombination layer is formed between the current collection region and the drift region, the low-service life high recombination layer can recombine lots of excess carriers that are generated in a device turn-on state, thereby improving recombination currents and reducing hole injection of the current collection region. Therefore, the turn-off trailing time is shortened; objectives of on-off time reduction and on-off loss reduction can be achieved; and the anti-latch capability of the device is improved.

Description

technical field [0001] The invention belongs to the field of basic electrical components and relates to the preparation of semiconductor devices, in particular to an IGBT structure and a manufacturing method for realizing local lifetime control. Background technique [0002] IGBT (Insulated Gate Bipolar Transistor, Insulated Gate Bipolar Transistor) is a composite voltage-controlled power semiconductor device composed of BJT (Bipolar Transistor) and MOSFET (Insulated Gate Field Effect Transistor). It has the main advantages of power BJT and power MOSFET: high input impedance, small input driving power, small on-resistance, large current capacity, fast switching speed, etc. In this era of high-voltage and high-frequency power electronic devices, IGBT has undoubtedly become the mainstream device in the field of power electronics applications. The development of IGBT has roughly experienced three generations of technology: PT-IGBT (punch-through IGBT), NPT-IGBT (non-punch-thro...

AI Technical Summary

Problems solved by technology

[0004] Although this method can increase the turn-off speed of PT-IGBT, the method of electronic irradiation and heavy metal doping lifetime control belongs to global lifetime control, and it is difficult to achieve local lifetime control, such as in figure 1 In the PT-IGBT shown, there is no need for lifetime control near the front PN junctions J1 and J2, but electron irradiation and heavy metal doping will inevitably affect the carrier lifetime here.

An obvious defect of this global lifetime control is that the carrier lifetime of the entire device body region will increase significantly as the temperature rises. When the temperature rises, the carriers stored in the entire n-voltage withstand layer 107 The concentration increases significantly, the on-state voltage drop decreases significantly, and it presents a significant negative temperature coefficient, which is not conducive to parallel use, and the turn-off loss also increases significantly, which affects the long-term reliable use of the device

Images