Porous indium phosphide barrier layer, corrosion liquid of porous indium phosphide and use method

Abstract

This invention relate to a multi-hole indium phosphide barrier layer and its corrosive liquor and its using method. It includes the mixed liquor of hydrobromic acid, nitric acid and water. The weight amount is that hydrobromic acid: 1-2, water 10-20. the procedures are that 1: a multi-hole indium phosphide material is selected, 2: the multi-hole indium phosphide material is soaked into the mixed liquor said in claim of right 1, 3: the barrier layer of the indium phosphide surface and part of the multi-hole indium phosphide layer is eroded, so the material is thinned.

Description

technical field [0001] The present invention belongs to the technical field of semiconductors, in particular to a method for removing a barrier layer formed on the surface of porous indium phosphide and a thinning method for porous indium phosphide, specifically, to removing a barrier layer on the surface of porous indium phosphide and thinning the porous indium phosphide An etching solution for indium phosphide and a method for using the etching solution. Background technique [0002] The discovery of strong visible light on porous silicon prepared by electrochemical etching methods has aroused great interest in porous semiconductor materials. In recent years, many studies have been carried out on porous semiconductor compounds such as porous SiC, SiGe, GaP, GaAs, GaN, InP, etc. Among them, Al 2 o 3 A wide range of self-organized growth and regularly arranged nanomaterial arrays, such as carbon nanotube arrays, prepared by using a film as a mask; Si, GaAs, and GaN nanoho...

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Problems solved by technology

[0005] However, although scholars from various countries have carried out a series of studies on porous indium phosphide and achieved some preliminary results, there is no good solution for the barrier layer formed on the surface of porous indium phosphide during the initial process of electrochemical corrosion. method removal

The surface morphology of the barrier layer is intricate and its properties are extremely poor, which hinders the further research and application of growing quantum dots, wires, well structures and photonic crystals using porous indium phosphide as a template.

It has been reported in the literature that H 2 SO 4 :H 2 O:H 2 o 2 =3:1:1, the etching time was 30 seconds to remove this irregular barrier layer (Physica E Vol 9(2001), pages 723-727, Aimin Liu et al.), but the porous phosphorus obtained by this method The surface of indium chloride is uneven, and it is easy to make the whole porous layer fall off

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