Wafer thinning device

A wafer and circular technology, applied in the field of wafer thinning devices, can solve problems such as wafer breakage, and achieve the effect of energy concentration and small cross-section

Pending Publication Date: 2020-06-19
SOUTH UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] In order to overcome the deficiencies of the prior art, the present invention provides a wafer thinning device, which solves the problem of wafer breakage caused by mechanical stress in the traditional wafer thinning process

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Wafer thinning device
  • Wafer thinning device
  • Wafer thinning device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0029] This part will describe the specific embodiment of the present invention in detail, and the preferred embodiment of the present invention is shown in the accompanying drawings, and the function of the accompanying drawings is to supplement the description of the text part of the specification with figures, so that the present invention can be intuitively and vividly understood Each technical feature and the overall technical solution, but it should not be construed as a limitation on the protection scope of the present invention.

[0030] In the description of the present invention, if it involves orientation description, for example, the orientation or positional relationship indicated by "upper", "lower", "front", "back", "left", "right" etc. is based on the The orientation or positional relationship is only for the convenience of describing the present invention and simplifying the description, but does not indicate or imply that the device or element referred to must...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to the technical field of wafer thickness reduction and discloses a wafer thinning device. The wafer thinning device comprises a power supply and a tool electrode. One pole of the power supply is electrically connected with the tool electrode. The other pole of the power supply can be electrically connected with a wafer to be processed. The tool electrode is provided with a plurality of discharge terminals. Through the electric spark machining principle, the tool electrode and the wafer are connected with the two poles of the power supply correspondingly, and the space between the tool electrode and the wafer is broken down through voltage to form a discharge channel between the tool electrode and the wafer, and then the surface of the wafer at the discharge channel is thinned. The whole process belongs to non-contact type machining. No contact acting force exists between the tool electrode and the wafer. Thus, the wafer has no risk of breakage caused by excess contact force.

Description

technical field [0001] The invention relates to the technical field of wafer thickness reduction, in particular to a wafer thinning device. Background technique [0002] A wafer is a sheet-like semiconductor that is an essential material in the manufacture of integrated circuits. Its manufacturing process mainly includes three stages: ingot manufacturing, wafer preparation, and wafer completion. [0003] Ingot manufacturing: The first process of wafer manufacturing is ingot manufacturing, which is generally the initial ingot obtained through purification in raw materials → melting / gasification → crystallization. Then, the outer surface of the whole crystal rod is polished by cylindrical grinding to complete the manufacture of a crystal rod. [0004] Wafer Preparation: Wafers are circular flakes that are uniformly cut from an ingot. After the ingot is prepared, the ingot is cut into wafers with uniform thickness by wire saw or wire EDM / thin slice cutting, called sliced ​​w...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): B28D5/02H01L21/67
CPCB28D5/02H01L21/67011
Inventor 赵永华关均铭王焓宇
Owner SOUTH UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products