Method for regulating and controlling thickness of two-dimensional Bi2O2Se thin film

A thin film thickness and thin film technology, applied in the field of Bi2O2Se thin film thickness regulation, can solve the problems of low gate control capability, small size, high dark current, etc., and achieve the effect of good repeatability and simple operation

Pending Publication Date: 2021-11-23
NANJING UNIV OF SCI & TECH
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Currently, Bi 2 o 2 The application of Se materials is mainly concentrated in the field of photodetection, because the two-dimensional Bi 2 o 2 The synthesis of Se materials is limited to mica substrates, SiO 2 / Si substrate is difficult to synthesize, and the reported non-destructive transfer method is more difficult
Thanks Bi 2 o 2 The combination between Se material and mica is strong. Using the widely reported HF wet transfer method still faces many problems, such as HF will damage the sample surface, large-sized thin samples are easy to break, and thin samples with a thickness below 5nm are not easy to transfer and have a large size. Small
This results in Bi after HF transfer 2 o 2 Se has high dark current and very low gating capability, limiting the large-size Bi below 5nm 2 o 2 Applications of Se thin samples in the field of electrical and optoelectronic devices

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for regulating and controlling thickness of two-dimensional Bi2O2Se thin film
  • Method for regulating and controlling thickness of two-dimensional Bi2O2Se thin film
  • Method for regulating and controlling thickness of two-dimensional Bi2O2Se thin film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0045] will be synthesized with Bi 2 o 2 The mica sheet of the Se film was placed in a reactive ion etching device. The rotational speed of the sample stage is 10 rpm, the rotation angle is -30°, the ion beam current is 80 mA, the ion beam voltage is 200 V, and the accelerating voltage is 200 V. The radio frequency power is 120W, the current of the neutralizer is 500mA, the incoming Ar flow rate is 10sccm, O 2 The flow rate was 6 sccm and the neutralizer gas (Ar) flow rate was 10 sccm. Vacuum up to 6.4×10 -4 Pa. A single etching time is 10s, etching is performed twice, and a total of 20s is etched. Such as figure 1 As shown, the atomic force microscope test shows that the sample is gradually thinned, and every etching 10s, the thinning is about 2nm, that is, 3 layers. The first etching can etch away thin irregular samples around and on the surface of the sample. Bi 2 o 2 The Se surface is flat and the RMS roughness changes little (0.33nm, 0.14nm, 0.26nm), which prove...

Embodiment 2

[0048] By HF wet transfer method, the two-dimensional Bi obtained on the mica substrate 2 o 2 Se film transferred to SiO 2 / Si substrate. Under the condition that other parameters remain unchanged, choose beam current 80mA, voltage 200V, etch twice, etching time is 15s, 12s, used to slowly thin the sample within 10nm, then choose beam current 100mA, voltage 280V, Etching 2 times, the etching time is 10s, 18s, used to thin the sample within 20nm. Such as Figure 4 As shown, the optical microscope observation shows that the etching effect is obvious. Figure 5 for Figure 4 Corresponding to the atomic force microscope test, 8nm is thinned to 3nm until it is completely etched; 14nm is thinned to 6nm.

Embodiment 3

[0050] By HF wet transfer method, the two-dimensional Bi obtained on the mica substrate 2 o 2 Se films were transferred onto Au / Si substrates. Under the parameter conditions in Example 1, etching was performed three times, and the etching time was 10s, 15s, and 19s, and a total of 44s was etched. Figure 6 Bi on Au / Si substrate 2 o 2 OM and corresponding AFM map of Se. Such as Figure 7 As shown, the Raman spectroscopy test results are consistent with figure 2 Similarly, it proves that the etching thinning rate of the sample after HF wet transfer is similar to that of the sample grown directly on mica, and the etching process does not significantly damage the sample.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a method for regulating and controlling the thickness of a two-dimensional Bi2O2Se thin film. The method comprises the following steps that the two-dimensional Bi2O2Se thin film with a first thickness is prepared on a first substrate through a chemical vapor deposition method; the thickness of the two-dimensional Bi2O2Se thin film is regulated and controlled to be a second thickness through a plasma etching process, the vacuum degree of etching equipment of the plasma etching process is 6.4*10<-4> Pa, the radio frequency power is 120 W, the current of a neutralizer is 500 mA, the current range of an ion beam is 80 mA to 100 mA, the voltage of the ion beam is 200 V to 280 V, the Ar flow is 10 sccm, the O2 flow is 6 sccm, and the etching time is 6-20 seconds. The method is simple to operate and good in repeatability, and realizes uniform thinning of the two-dimensional Bi2O2Se thin film material.

Description

technical field [0001] The invention relates to the field of preparation of inorganic materials, more specifically to a Bi 2 o 2 Control method of Se thin film thickness. Background technique [0002] Two-dimensional materials include graphene, hexagonal boron nitride (hBN) and transition metal chalcogenides (TMDCs), etc., which have excellent optical, electrical, magnetic and mechanical properties, and are used in biosensing, gas sensing, light Detection, photocatalysis, solar cell energy storage, and flexible wearable devices have been widely used. Due to the atomically thin structure and high surface-to-volume ratio of 2D materials, the surface state of the material plays a very important role in the device performance. It is well known that the electronic structure of 2D materials strongly depends on their thickness, such as MoS from multilayer to monolayer 2 A transition from an indirect bandgap to a direct bandgap occurs. [0003] Two-dimensional Bi synthesized by...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L21/336H01L21/02H01L21/465H01L29/24H01L29/772
CPCH01L29/66969H01L29/24H01L21/02565H01L21/0262H01L21/465H01L29/772
Inventor 陈翔戴晨东熊云海许多李志
Owner NANJING UNIV OF SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap