36 results about "Sacrificial metal" patented technology

This invention proposes a patterned PEDOT:PSS hydrogel based on electrochemical pulse deposition and its preparation method. The preparation apparatus includes an electrolytic cell, an electrochemical workstation, a substrate, a conductive layer, and a sacrificial metal layer. The electrolytic cell contains a PEDOT:PSS aqueous solution. The conductive layer is connected to the working electrode of the electrochemical workstation. Under the excitation of the electrochemical workstation, the sacrificial metal layer forms metal cations, which electrostatically adsorb PEDOT:PSS in the PEDOT:PSS aqueous solution, ultimately forming a patterned shape on the conductive layer using the sacrificial metal layer as a template. This invention achieves thickness control of the patterned PEDOT:PSS hydrogel by adjusting various deposition parameters. The preparation process is simple, low-cost, and highly practical, fully realizing the patterning of PEDOT:PSS hydrogels.

Embodiments of the present disclosure provide semiconductor devices having conductive features with reduced height and increased width, and methods for forming the semiconductor devices. Particularly, sacrificial self-aligned contact (SAC) layer and sacrificial metal contact etch stop layer (M-CESL) are used to form conductive features with reduced resistance. After formation of the conductive features, the sacrificial SAC and sacrificial M-CESL are removed and replaced with a low-k material to reduce capacitance in the device. As a result, performance of the device is improved.

A method for manufacturing a semiconductor device, comprising: forming an active region on a substrate, lower channel layers on the active region, upper channel layers on the lower channel layers, and an intermediate insulating layer between the lower channel layers and the upper channel layers; forming a lower gate electrode surrounding the lower channel layers and dummy conductive material layers between the upper channel layers and the intermediate insulating layer; forming an insulating material layer covering the upper channel layers and the dummy conductive material layers; partially removing the insulating material layer to expose the dummy conductive material layers; removing the dummy conductive material layers; forming sacrificial metal layers between the upper channel layers and the intermediate insulating layer; patterning the insulating material layer to form an insulating pattern; and forming an upper gate electrode surrounding the upper channel layers on the lower gate electrode and the insulating pattern.

The utility model discloses maintenance equipment for a sacrificial anode, and belongs to the technical field of steel bar repair and protection. The maintenance equipment for the sacrificial anode comprises a connection unit, a maintenance unit and a control unit, the connection unit is provided with a connection channel, and the connection channel is used for being communicated with a maintenance channel of the sacrificial anode; the new gel injection unit is communicated with the connecting channel of the connecting unit and is used for injecting new maintenance gel into the sacrificial anode; and the waste gel extraction unit is communicated with the connecting channel of the connecting unit and is used for extracting the waste gel in the sacrificial anode. By adopting the maintenance equipment disclosed by the utility model, the protection gel in the maintainable embedded sacrificial anode can be conveniently replaced in time, so that the requirements of sacrificial metal on working environments such as long-term working humidity, pH value, ion distribution and the like are met.

The invention discloses a method for preventing a semiconductor device from being electrochemically corroded and the semiconductor device. The semiconductor device comprises a semiconductor layer, a first conductive channel and a second conductive channel, wherein the first conductive channel and the second conductive channel are located on the first surface of the semiconductor layer. Forming a sacrificial metal layer on the second surface of the semiconductor layer, wherein the metal activity of the sacrificial metal layer is higher than that of the first conductive channel and the second conductive channel; cleaning the surfaces of the first conductive channel and the second conductive channel; and removing the sacrificial metal layer. Wherein in the process of cleaning the surfaces of the first conductive channel and the second conductive channel, a sacrificial metal layer formed on the second surface of the semiconductor layer replaces the first conductive channel to serve as an anode to react with a cleaning solution so as to protect the first conductive channel.

The invention relates to a method for preparing coralline-like hollow silicon carbide by sacrifice of a metal template, and belongs to the technical field of metal film materials. Metal or alloy particles are used as a core and a hard template, a silicon dioxide layer and an amorphous carbon layer are sequentially coated through a condensation polymerization reaction, and in the thermal reduction process, reduction characteristics of the metal at high temperature are utilized, and a small amount of hydrogen is used as assistance; a silicon carbide shell can be generated at a relatively low pyrolysis temperature, an external shell layer is prevented from collapsing by utilizing a supporting effect of an internal hard template, and preferably, internal metal and redundant silicon dioxide which does not participate in a reaction are etched off by a mixed acid solution, so that coralline-like hollow silicon carbide is obtained.

An organic light emitting display device includes a substrate, a light emitting structure, an undercut structure, and a functional module. The substrate includes an opening region, a peripheral region surrounding the opening region, and a display region surrounding the peripheral region. The substrate has a groove located in the peripheral region and an opening located in the opening region. The light emitting structure is located in the display region on the substrate. The undercut structure is located inside the groove in the substrate. The undercut structure includes a sacrificial metal pattern having a first width and at least one insulating layer pattern having a second width greater than the first width. The functional module is located in the opening of the substrate.

A semiconductor nanostructure and an epitaxial semiconductor material portion are formed on a front surface of a substrate, and a planarization dielectric layer is formed thereabove. Recess cavities are formed to expose a first active region and the epitaxial semiconductor material portion. A metallic cap structure is formed on the first active region, and a sacrificial metallic material portion is formed on the epitaxial semiconductor material portion. A connector via cavity is formed by anisotropically etching the sacrificial metallic material portion and an underlying portion of the epitaxial semiconductor material portion while the metallic cap structure is masked with a hard mask layer. A connector via structure is formed in the connector via cavity. Front-side metal interconnect structures are formed on the connector via structure and the metallic cap structure, and a backside via structure is formed through the substrate on the connector via structure.

The present disclosure provides various embodiments of methods for protecting an exposed metal surface of a metal layer prior to etching the metal layer using wet etch chemistry optimized for the bulk metal layer. In the embodiments disclosed herein, the exposed metal surface of the metal layer is protected by depositing a sacrificial metal layer on the exposed metal surface prior to etching the metal layer with the wet etch chemistry. The sacrificial metal layer protects the exposed metal surface by preventing oxidative passivation of the metal surface before and during etching the metal layer with the wet etch chemistry. In some embodiments, the techniques disclosed herein may be used to protect a surface of a ruthenium (Ru) layer prior to etching the ruthenium layer using halogenating etch chemistries in a wet atomic layer etching (ALE) process.

The present invention relates to a composite containing active metal particles and sacrificial metal particles, a membrane electrode assembly, and a fuel cell including the same.

The invention discloses a construction method of an air cushion type surge chamber, belongs to the technical field of underground structure construction of hydropower engineering, and solves the problems of poor high-pressure sealing performance, dynamic response lag and short structure service life of a traditional surge chamber. Comprising the following steps: releasing guide holes and injecting micro-expansion slurry to form a pre-supporting arch shell based on coupling analysis of a three-dimensional geological radar and a ground stress field; excavating a cavity by adopting a blasting technology, and spraying a support coating after blasting; alternately laying a basalt fiber sealing layer and a sacrificial metal net cathode protection layer on the rock wall, and implanting a distributed optical fiber sensing array; pouring a concrete lining; a titanium alloy corrugated air cushion interface film is compounded outside the lining, and supercritical carbon dioxide is filled; inert gas is injected stage by stage to establish design air pressure, and sensing data is linked to regulate and control a cooling system and alloy deformation; the dome integrated scroll compressor unit and the high-pressure gas storage capsule array achieve 20 ms-level gas pressure dynamic balance. The air tightness, the response speed and the long-term operation stability of the surge chamber are improved.

The invention relates to a sacrificial anode and a method for casting the anode, the anode comprising an anode main part made from a first metal being a sacrificial metal arranged as a metal alloy, such as an aluminum or zinc alloy, and an elongated carrying part, extending from the main part, and arranged from a second metal. The carrying part being arranged for connection to said submerged structure and for leading a current between the sacrificial anode and the submerged structure, where the electrical resistance of the carrying part is substantial equal to, or smaller than the electrical resistance of the main part.

The present disclosure provides various embodiments of methods for protecting an exposed metal surface of a metal layer prior to etching the metal layer using wet etch chemistry optimized for the bulk metal layer. In the embodiments disclosed herein, the exposed metal surface of the metal layer is protected by depositing a sacrificial metal layer on the exposed metal surface prior to etching the metal layer with the wet etch chemistry. The sacrificial metal layer protects the exposed metal surface by preventing oxidative passivation of the metal surface before and during etching the metal layer with the wet etch chemistry. In some embodiments, the techniques disclosed herein may be used to protect a surface of a ruthenium (Ru) layer prior to etching the ruthenium layer using halogenating etch chemistries in a wet atomic layer etching (ALE) process.

The invention discloses a display panel and a display device. The display panel comprises a display area and a non-display area. The display panel comprises an array substrate which comprises a first substrate; the common electrode conduction layer is arranged in the non-display area of the first substrate and comprises a first metal layer, a passivation layer, a first transparent conductive layer and a first alignment film which are sequentially stacked; the first alignment film covers the first transparent conductive layer; the opposite substrate comprises a second substrate; the blocking assembly is arranged in the non-display area of the second substrate and comprises a blocking column and a sacrificial metal layer which are arranged in a stacked mode; the frame glue is located in the non-display area and is connected with the opposite substrate and the array substrate; wherein the end, away from the second substrate, of the sacrificial metal layer abuts against the first alignment film. By means of the arrangement, the sacrificial metal layer of the partition assembly can react with water vapor to consume a large amount of water vapor, the water vapor can be effectively prevented from diffusing towards one side of the display area, and the problem that in the related technology, wires of a narrow-frame or frameless display panel are prone to being corroded is solved.

Embodiments of the invention are directed to a method of fabricating an integrated circuit (IC). The method includes performing fabrication operations to form transistors on a substrate. The fabrication operations include forming a sacrificial metal gate and forming a shared non-sacrificial metal gate. The sacrificial metal gate is recessed to form a sacrificial metal gate, and the shared non-sacrificial metal gate is recessed to form a recessed shared non-sacrificial metal gate. A pattern is formed over the sacrificial metal gate and the recessed shared non-sacrificial metal gate. The pattern defines a single diffusion break footprint over a top surface of the sacrificial metal gate, along with a gate-cut footprint over a central region of a top surface of the recessed shared non-sacrificial metal gate.

A novel and compact electrochemical reactor integrated within a hydraulic pump, capable of simultaneously performing water transport and in situ generation of coagulants through electrocoagulation. The system eliminates the need for secondary chemicals, external reactors, or specialized personnel. In this configuration, the pump casing functions as the cathode, while the rotating impeller blades act as the anode, both made of sacrificial metals such as iron or aluminum. When direct current is applied between these components, the anode undergoes controlled dissolution, releasing metal ions (Fe3+ or Al3+) that undergo hydrolysis reactions to form active coagulant species directly in the flowing water.

Embodiments of the present disclosure provide semiconductor devices having conductive features with reduced height and increased width, and methods for forming the semiconductor devices. Particularly, sacrificial self-aligned contact (SAC) layer and sacrificial metal contact etch stop layer (M-CESL) are used to form conductive features with reduced resistance. After formation of the conductive features, the sacrificial SAC and sacrificial M-CESL are removed and replaced with a low-k material to reduce capacitance in the device. As a result, performance of the device is improved.

A method of manufacturing a semiconductor device may include selectively depositing a carbon layer on sidewalls of a substrate mold before depositing a sacrificial metal layer in a semiconductor device structure having a vertical stacked structure.

A device for cathodic protection against corrosion of at least one metal structure in contact with an electrolytic medium comprising a sedimentary soil, the protective device dispensing with the need for a sacrificial metal and means for connection to an electrical distribution network and including at least two microbial anode systems including microorganisms and an electrode configured to be in contact with the microorganisms and the electrolytic medium, the microorganisms having the ability to supply electrons to the electrode by degradation of oxidizable ambient resources according to oxidation-reduction reactions, the electrode of each microbial anode system being configured to be buried at least partially in the sedimentary soil of the electrolytic medium and the free electrochemical potential of the microbial anode system is lower than the free electrochemical potential of the metal of the metal structure to be protected.

The invention relates to the technical field of batteries, in particular to a high-conductivity composite silicon-based negative electrode material and a preparation method and application thereof. According to the method, silicon and sacrificial metal are co-deposited on a graphite substrate, and then a metal phase is removed through selective chemical etching, so that a nanoscale ion / electron dual-transmission channel is successfully constructed in the material. By means of the innovative structural design, the electronic conductivity of the material is remarkably improved, the defect of poor conductivity is effectively overcome, lithium ion transmission dynamics is promoted, meanwhile, the three-dimensional nano-channel network can effectively buffer volume expansion of silicon in the charging and discharging process, pulverization and structural collapse of the electrode material are restrained, and the service life of the electrode material is prolonged. Therefore, the conductivity, the structural stability and the cycle life of the material are synergistically improved. According to the method, a process route combining physical deposition and mild chemical etching is adopted, so that the process is green, safe and controllable.

The present invention provides a method for manufacturing semiconductor devices that improves the integration density and reliability of semiconductor devices. [Solution] The method comprises the steps of: removing a portion of the interlayer insulating layer and the source / drain region to form a contact hole; forming a metal-semiconductor compound layer on the lower end of the contact hole; forming a liner conductive layer on the metal-semiconductor compound layer so as to cover the side surface of the contact hole; selectively oxidizing the liner conductive layer formed on the metal-semiconductor compound layer; selectively removing the oxidized liner conductive layer; forming a preliminary contact conductive layer on the liner conductive layer; forming a sacrificial metal layer on the preliminary contact conductive layer; removing a portion of the sacrificial metal layer and the preliminary contact conductive layer by a planarization process; and forming a contact conductive layer by heat treatment of the preliminary contact conductive layer using hydrogen plasma.

A semiconductor nanostructure and an epitaxial semiconductor material portion are formed on a front surface of a substrate, and a planarization dielectric layer is formed thereabove. Recess cavities are formed to expose a first active region and the epitaxial semiconductor material portion. A metallic cap structure is formed on the first active region, and a sacrificial metallic material portion is formed on the epitaxial semiconductor material portion. A connector via cavity is formed by anisotropically etching the sacrificial metallic material portion and an underlying portion of the epitaxial semiconductor material portion while the metallic cap structure is masked with a hard mask layer. A connector via structure is formed in the connector via cavity. Front-side metal interconnect structures are formed on the connector via structure and the metallic cap structure, and a backside via structure is formed through the substrate on the connector via structure.

A system to measure potentials in a metal pipeline having isolation and cathodic protection is provided. The system is configured to measure the instant off (I-Off) potential of the protected metal pipeline. The system includes a first metal asset, such as a pipeline, electrically coupled to a cathodic protection element, such as a sacrificial metal. A switch is electrically coupled to the first metal asset, wherein the switch has an open position and a closed position. The monitoring device measures the I-Off potential when the switch is in the open position.

Method for manufacturing a metal part and associated use The present invention relates to a method for manufacturing a metal part comprising a peripheral part delimiting at least one through opening, the method comprising the following steps: - supplying a metal blank (20); - introducing the metal blank (20) and at least one sacrificial metal compact (22) into a forging tool (40); - joint forging in the forging tool (40) of the blank (20) and the at least one sacrificial metal compact (22) so as to form a forged part (34) comprising a peripheral region (38) formed exclusively of material of the metal blank (20) and a web (36) formed at least in part of material of the at least one sacrificial metal compact (22); - depositing the forged part (34); and - removing the web (36) so as to form the through opening (16). Figure for the abbreviation: Figure 2

To provide a battery cell and a battery module including the same, especially, a directly water-cooled battery cell and a directly water-cooled battery module including the same.SOLUTION: A battery cell can be improved in corrosion resistance by using sacrificial metal having larger ionization tendency than the case of the battery cell, and the heat of the battery cell can be cooled using general cooling water for vehicle.SELECTED DRAWING: Figure 4

This invention relates to a porous nickel-molybdenum alloy catalytic electrode for hydrogen production via water electrolysis and its fabrication method. The electrode comprises a nickel substrate providing support and conductivity, and a catalytically active layer supported thereon. The catalytically active layer is a porous nickel-molybdenum alloy containing a sacrificial metal. The nickel substrate and the catalytically active layer are integrally formed, self-supporting structures. The fabrication process employs a two-step alloying and a final dealloying method. The alloying process involves surface alloying to form an alloy on the nickel substrate surface, including mechanical energy-assisted infiltration, embedding, surface chemical vapor deposition, and electrodeposition. The dealloying process employs either gas-phase or liquid-phase dealloying. Compared to existing technologies, the porous alloy catalytic electrode provided by this invention, when applied to the cathode of water electrolysis for hydrogen production, exhibits high hydrogen evolution reaction activity, stable performance, and a simple and efficient fabrication method, making it suitable for large-scale industrial production.

Provided are a composite and a membrane electrode assembly including active metal particles and sacrificial metal particles, and a fuel cell including the same.

A semiconductor processing method and a semiconductor device, the semiconductor processing method comprising: forming a patterned mask layer having a mask opening on a substrate; performing an evaporation process to form a metal material layer on the substrate and the patterned mask layer, the metal material layer including a metal pattern formed on the substrate exposed by the mask opening and a sacrificial metal portion formed on the patterned mask layer; removing the patterned mask layer and the sacrificial metal portion, wherein the evaporation process is performed during an evaporation time period, and in the evaporation process, the substrate having the patterned mask layer formed thereon is placed on a carrier plate of an evaporation apparatus, and the substrate rotates as the carrier plate rotates, wherein the evaporation time period includes a first time period and a second time period, the carrier plate rotates in a first rotation direction during the first time period, and rotates in a second rotation direction opposite to the first rotation direction during the second time period. The semiconductor processing method can improve the morphology of the formed metal pattern.