15 results about "Sacrificial metal" patented technology

A method for manufacturing a semiconductor device, comprising: forming an active region on a substrate, lower channel layers on the active region, upper channel layers on the lower channel layers, and an intermediate insulating layer between the lower channel layers and the upper channel layers; forming a lower gate electrode surrounding the lower channel layers and dummy conductive material layers between the upper channel layers and the intermediate insulating layer; forming an insulating material layer covering the upper channel layers and the dummy conductive material layers; partially removing the insulating material layer to expose the dummy conductive material layers; removing the dummy conductive material layers; forming sacrificial metal layers between the upper channel layers and the intermediate insulating layer; patterning the insulating material layer to form an insulating pattern; and forming an upper gate electrode surrounding the upper channel layers on the lower gate electrode and the insulating pattern.

The present disclosure provides various embodiments of methods for protecting an exposed metal surface of a metal layer prior to etching the metal layer using wet etch chemistry optimized for the bulk metal layer. In the embodiments disclosed herein, the exposed metal surface of the metal layer is protected by depositing a sacrificial metal layer on the exposed metal surface prior to etching the metal layer with the wet etch chemistry. The sacrificial metal layer protects the exposed metal surface by preventing oxidative passivation of the metal surface before and during etching the metal layer with the wet etch chemistry. In some embodiments, the techniques disclosed herein may be used to protect a surface of a ruthenium (Ru) layer prior to etching the ruthenium layer using halogenating etch chemistries in a wet atomic layer etching (ALE) process.

The present disclosure provides various embodiments of methods for protecting an exposed metal surface of a metal layer prior to etching the metal layer using wet etch chemistry optimized for the bulk metal layer. In the embodiments disclosed herein, the exposed metal surface of the metal layer is protected by depositing a sacrificial metal layer on the exposed metal surface prior to etching the metal layer with the wet etch chemistry. The sacrificial metal layer protects the exposed metal surface by preventing oxidative passivation of the metal surface before and during etching the metal layer with the wet etch chemistry. In some embodiments, the techniques disclosed herein may be used to protect a surface of a ruthenium (Ru) layer prior to etching the ruthenium layer using halogenating etch chemistries in a wet atomic layer etching (ALE) process.

Embodiments of the invention are directed to a method of fabricating an integrated circuit (IC). The method includes performing fabrication operations to form transistors on a substrate. The fabrication operations include forming a sacrificial metal gate and forming a shared non-sacrificial metal gate. The sacrificial metal gate is recessed to form a sacrificial metal gate, and the shared non-sacrificial metal gate is recessed to form a recessed shared non-sacrificial metal gate. A pattern is formed over the sacrificial metal gate and the recessed shared non-sacrificial metal gate. The pattern defines a single diffusion break footprint over a top surface of the sacrificial metal gate, along with a gate-cut footprint over a central region of a top surface of the recessed shared non-sacrificial metal gate.

A novel and compact electrochemical reactor integrated within a hydraulic pump, capable of simultaneously performing water transport and in situ generation of coagulants through electrocoagulation. The system eliminates the need for secondary chemicals, external reactors, or specialized personnel. In this configuration, the pump casing functions as the cathode, while the rotating impeller blades act as the anode, both made of sacrificial metals such as iron or aluminum. When direct current is applied between these components, the anode undergoes controlled dissolution, releasing metal ions (Fe3+ or Al3+) that undergo hydrolysis reactions to form active coagulant species directly in the flowing water.

The invention relates to the technical field of batteries, in particular to a high-conductivity composite silicon-based negative electrode material and a preparation method and application thereof. According to the method, silicon and sacrificial metal are co-deposited on a graphite substrate, and then a metal phase is removed through selective chemical etching, so that a nanoscale ion / electron dual-transmission channel is successfully constructed in the material. By means of the innovative structural design, the electronic conductivity of the material is remarkably improved, the defect of poor conductivity is effectively overcome, lithium ion transmission dynamics is promoted, meanwhile, the three-dimensional nano-channel network can effectively buffer volume expansion of silicon in the charging and discharging process, pulverization and structural collapse of the electrode material are restrained, and the service life of the electrode material is prolonged. Therefore, the conductivity, the structural stability and the cycle life of the material are synergistically improved. According to the method, a process route combining physical deposition and mild chemical etching is adopted, so that the process is green, safe and controllable.

The present invention provides a method for manufacturing semiconductor devices that improves the integration density and reliability of semiconductor devices. [Solution] The method comprises the steps of: removing a portion of the interlayer insulating layer and the source / drain region to form a contact hole; forming a metal-semiconductor compound layer on the lower end of the contact hole; forming a liner conductive layer on the metal-semiconductor compound layer so as to cover the side surface of the contact hole; selectively oxidizing the liner conductive layer formed on the metal-semiconductor compound layer; selectively removing the oxidized liner conductive layer; forming a preliminary contact conductive layer on the liner conductive layer; forming a sacrificial metal layer on the preliminary contact conductive layer; removing a portion of the sacrificial metal layer and the preliminary contact conductive layer by a planarization process; and forming a contact conductive layer by heat treatment of the preliminary contact conductive layer using hydrogen plasma.

A semiconductor nanostructure and an epitaxial semiconductor material portion are formed on a front surface of a substrate, and a planarization dielectric layer is formed thereabove. Recess cavities are formed to expose a first active region and the epitaxial semiconductor material portion. A metallic cap structure is formed on the first active region, and a sacrificial metallic material portion is formed on the epitaxial semiconductor material portion. A connector via cavity is formed by anisotropically etching the sacrificial metallic material portion and an underlying portion of the epitaxial semiconductor material portion while the metallic cap structure is masked with a hard mask layer. A connector via structure is formed in the connector via cavity. Front-side metal interconnect structures are formed on the connector via structure and the metallic cap structure, and a backside via structure is formed through the substrate on the connector via structure.

Method for manufacturing a metal part and associated use The present invention relates to a method for manufacturing a metal part comprising a peripheral part delimiting at least one through opening, the method comprising the following steps: - supplying a metal blank (20); - introducing the metal blank (20) and at least one sacrificial metal compact (22) into a forging tool (40); - joint forging in the forging tool (40) of the blank (20) and the at least one sacrificial metal compact (22) so as to form a forged part (34) comprising a peripheral region (38) formed exclusively of material of the metal blank (20) and a web (36) formed at least in part of material of the at least one sacrificial metal compact (22); - depositing the forged part (34); and - removing the web (36) so as to form the through opening (16). Figure for the abbreviation: Figure 2

This invention relates to a porous nickel-molybdenum alloy catalytic electrode for hydrogen production via water electrolysis and its fabrication method. The electrode comprises a nickel substrate providing support and conductivity, and a catalytically active layer supported thereon. The catalytically active layer is a porous nickel-molybdenum alloy containing a sacrificial metal. The nickel substrate and the catalytically active layer are integrally formed, self-supporting structures. The fabrication process employs a two-step alloying and a final dealloying method. The alloying process involves surface alloying to form an alloy on the nickel substrate surface, including mechanical energy-assisted infiltration, embedding, surface chemical vapor deposition, and electrodeposition. The dealloying process employs either gas-phase or liquid-phase dealloying. Compared to existing technologies, the porous alloy catalytic electrode provided by this invention, when applied to the cathode of water electrolysis for hydrogen production, exhibits high hydrogen evolution reaction activity, stable performance, and a simple and efficient fabrication method, making it suitable for large-scale industrial production.

Provided are a composite and a membrane electrode assembly including active metal particles and sacrificial metal particles, and a fuel cell including the same.

A method for forming ohmic contacts on a compound semiconductor device is disclosed. A channel layer is formed on a substrate. A barrier layer is formed on the channel layer. A passivation layer is formed on the barrier layer. A contact area is formed by etching through the passivation layer and the barrier layer. The channel layer is partially exposed at a bottom of the contact area. A sacrificial metallic layer is conformally deposited on the contact area. The sacrificial metallic layer is subjected to an annealing process, thereby forming a heavily doped region in the channel layer directly under the sacrificial metallic layer. The sacrificial metallic layer is removed to expose the heavily doped region. A metal silicide layer is formed on the heavily doped region.

The present invention relates to a method for manufacturing a metal part comprising a peripheral part delimiting at least one through-opening, the method comprising the following steps: - providing a metal blank (20); - introducing the metal blank (20) and at least one sacrificial metal compact (22) into a forging tool (40); - jointly forging, in the forging tool (40), the blank (20) and the at least one sacrificial metal compact (22) so as to form a forged part (34) comprising a peripheral region (38) formed exclusively of material of the metal blank (20) and a web (36) formed at least partially from material of the at least one sacrificial metal compact (22); - removing the forged part (34); and - removing the web (36) so as to form the through-opening (16).

The application discloses a kind of porous metal material preparation method and equipment with controllable micron pore structure, belong to functional material preparation field.For the insufficient designability of pore and matrix damage problem caused by the severe removal process of the limited arrangement of sacrificial template in prior art, a method combining additive manufacturing and selective corrosion is proposed, comprising: S1 using metal powder as raw material, embedding sacrificial metal wire through 3D printing simultaneously, and obtaining a blank by stress relief annealing;S2 the blank is sintered again to form an open hole material by complex corrosion;S3 the porous material is treated by hot isostatic pressing or plasma spraying to obtain a high-strength product.The method realizes precise forming through piezoelectric ceramic driving and infrared temperature measurement closed-loop feedback, and the corrosion selectivity is greater than 500:1 by using complexing agents such as tetrasodium ethylenediaminetetraacetate, which realizes three-dimensional controllable preparation of micron pores without damaging the matrix, with small pore size deviation and high compressive strength, and is suitable for aerospace, biomedical and other fields.

Provided herein are methods of purifying chemical elements (e.g., radioisotopes) involving the use of sacrificial metal dopants and / or radical scavengers during the chromatographic separation of the desired elements, thereby mitigating unwanted radiation decomposition.