Atomic layer deposition reactor

Abstract

Various reactors for growing thin films on a substrate by subjecting the substrate to alternately repeated surface reactions of vapor-phase reactants are disclosed. In one embodiment, the reactor comprises a reaction chamber. A showerhead plate divides the reaction chamber into upper and lower parts. A first precursor is directed towards the lower half of the reaction chamber and a second precursor is directed towards the upper half of the reaction chamber. The substrate is disposed within the lower half of the reaction chamber. The showerhead plate includes plurality passages such that the upper half is in communication with the lower half of the reaction chamber. In another arrangement, the upper half of the reaction chamber defines a plasma cavity in which in-situ radicals are formed. In yet another arrangement, the reaction chamber includes a shutter plate, which is configured to selectively open and close the passages in the showerhead plate. In other arrangements, the showerhead plate is arranged to modify the local flow patterns of the gases flowing through the reaction chamber.

Description

RELATED APPLICATION [0001] This application claims the priority benefit under 35 U.S.C. § 119(e) of U.S. Provisional Application No. 60 / 312,628 filed Aug. 15, 2001.BACKGROUND OF THE INVENTION [0002] 1. Field of the Invention [0003] The present invention relates to an apparatus for growing thin films on a surface of a substrate. More particularly, the present invention relates to an apparatus for producing thin films on the surface of a substrate by subjecting the substrate to alternately repeated surface reactions of vapor-phase reactants. [0004] 2. Description of the Related Art [0005] There are several methods for growing thin films on the surface of substrates. These methods include vacuum evaporation deposition, Molecular Beam Epitaxy (MBE), different variants of Chemical Vapor Deposition (CVD) (including low-pressure and organometallic CVD and plasma-enhanced CVD), and Atomic Layer Epitaxy (ALE), which was studied extensively for semiconductor deposition and electroluminescent ...

AI Technical Summary

Benefits of technology

[0016] Another aspect of the present invention is a reactor configured to subject a substrate to alternately repeated surface reactions of vapor-phase reactants. The reactor includes a reaction chamber that defines a reaction space, the reaction space comprising a first section and a second section that are secured to each other through mechanical forces. A showerhead plate is disposed within the reaction space and divides the reaction space into a first part in which the substrate

Problems solved by technology

Cycles can also be more complex.

However, only a few precursors exhibit such ideal or near ideal behavior.

However, this method can result in sputtering by the plasma, which may contaminate the film as sputtered materials from parts in the reaction chamber contact the substrate.

Yet another disadvantage is that, when depositing conducting materials, arcing in the chamber can occur because the insulators used to isolate the RF from ground can also become coated with the deposited conducting material.

This has the disadvantage of requiring a large distance between the substrate and the radical source, which can lead to recombination of radicals before they reach the substrate.

Additionally, in this method, the distribution of radicals is typically non-uniform and the gas flow pattern in the reactor can be ill-defined.

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