The invention provides a coarsening and
etching method of a large-area controllable surface of a
SiC substrate light emitting diode (LED) based on a
laser, belonging to the technical field of LED. The surfaces of the
SiC substrate and an LED
semiconductor material can be coarsened by utilizing that the
semiconductor material highly absorbs high-power
laser with a
wavelength smaller than the absorption
wavelength of the band edge of the
semiconductor material to perform gasification. An area and a pattern coarsened and etched by the
laser are controlled by a high speed
scanner or a precise displacement stage; and the
wire width and depth of coarsening and
etching are regulated by controlling power and focusing degree of the laser. The method can be applied to coarsening and
etching of the surface of the
SiC substrate GaN-based LED with various structures. The laser is selected on the basis that the
wavelength of the laser is smaller than the absorption wavelength of the band edge of the coarsened and etched semiconductor. The method has the advantages of wide application materials, high coarsening and etching speed, large coarsening and etching area, low cost, good coarsening effect, small damage on the semiconductor material and high
controllability of coarsening and etching parameters of the
system; and by using the method, the problem of coarsening the p-GaN layer and the SiC substrate can be effectively solved. Thus, the method has a great application potential in high-brightness LED production.