41results about How to "Increase chance of shooting" patented technology

The technical scheme discloses high brightness LED structure with graphic surface and microstructure. Using Nano pressing technique prepares each graphic film from organic material on luminous surface of LED so as to form microstructure on LED surface in favor of transgression of emitting light from active region, for example micrographics with structure or coarsening, and photon crystal structure. Introducing the said micrographics on surface makes interfacial area of light emergence medium increase. The increased surface presents great lot small areas unordered arranged. Emergence of light from active region and interface of medium is at random in a certain extent. The invention improves directions of emergence light, increases probability of emergence so as to raise light extraction efficiency and external quantum efficiency of LED.

The invention discloses an LED flip chip. The LED flip chip sequentially comprises a sapphire substrate, an epitaxial layer, a conductive reflecting layer, a metal protective layer, a Vias and SiO2 insulating layer and metal electrodes from bottom to top, wherein the sapphire substrate is a sapphire substrate, obtained after inductive coupling plasma etching, with a graphical back side, an antireflection film is further arranged on the back side of the sapphire substrate, the antireflection film is an antireflection film, manufactured with an evaporation method, with silicon dioxide layers and titanium dioxide layers alternately arranged, the sum of the number of the silicon dioxide layers in the antireflection film and the number of the titanium dioxide layers in the antireflection film ranges from 6 to 15, and the thickness of the silicon dioxide layers in the antireflection film and the thickness of the titanium dioxide layers in the antireflection film range from 20 nm to 300 nm. The invention further provides a manufacturing method of the LED flip chip. The emitting angle of light at the bottom of the LED flip chip is increased through a graphical sapphire substrate technology, the light outgoing probability is increased, brightness is improved, and the brightness of white light is improved by 1% to 7%.

A light emitting diode grain comprises a substrate and an electrical layer formed on the substrate. A transition layer is formed between the substrate and the electrical layer and the transition layer comprises a smooth region with a smooth surface and a pattern region with a rough surface. The electrical layer is in contact with the surface of the smooth region of the transition layer, spherical aluminum nitride is clamped between the electrical layer and the transition layer, and a gap is formed between the electrical layer and the pattern region of the transition layer. According to the invention, the transition layer provided with a rough surface is first formed between the electrical layer and the substrate, the spherical aluminum nitride is then formed between the transition layer and the electrical layer, the aluminum nitride is matched with the rough surface, and a gap is formed between the aluminum nitride and the electrical layer. Thus, the probability that light emitted by a light emitting layer towards the substrate is emitted upwards through total reflection can be improved, and the light efficiency of the light emitting diode grain can be improved. The invention further relates to a method for preparing the light emitting diode grain.

The invention provides a manufacturing method for a GaN-based LED (Light Emitting Diode) chip for coarsening a p-GaN layer nanometer bowl-shaped surface and relates to the technical field of photoelectric device production. The manufacturing method comprises the following steps: firstly, evaporating a mask cesium chloride film layer for etching on the surface of a P-GaN layer of a GaN epitaxial wafer; filling water vapor into an evaporating platform chamber, thereby forming a plurality of cesium chloride nanometer islands; depositing silicon dioxide layers on the cesium chloride nanometer islands; soaking or ultrasonically treating the epitaxial wafer in deionized water, thereby forming a silicon dioxide nanometer bowl layer; taking the silicon dioxide nanometer bowl layer as an etching mask; after ending the etching, completely removing the silicon dioxide nanometer bowl layer remained on the GaN epitaxial wafer; performing ICP (Inductively Coupled Plasma) etching on one side of the GaN epitaxial wafer, thereby forming a platform; and evaporating an ITO (Indium Tin Oxide) film on the upper surface of the GaN epitaxial wafer. Compared with the conventional GaN-LED, the GaN-LED after being subjected to surface coarsening has the advantage that the luminous power is increased by above 35%.

A light emitting diode crystalline grain comprises a substrate, an epitaxial layer, and a plurality of spherical aluminum nitride, wherein the epitaxial layer is formed on the substrate and sequentially comprises a first semiconductor layer, a light emitting layer and a second semiconductor layer, the spherical aluminum nitrides are arranged at intervals between the epitaxial layer and the substrate, and the first semiconductor layer fully covers the spherical aluminum nitrides. By arranging the spherical aluminum nitrides at intervals between the epitaxial layer and the substrate, probability for light emitting towards the substrate from a light emitting layer to be totally reflected to emit upwards is increased, so that emitting efficiency of the light emitting diode crystalline grain is improved.

The invention provides an LED chip manufacturing method of high extraction external quantum efficiency. The method comprises the following steps: a step (1) of growing a GaN layer, an N-GaN layer, a quantum well layer, a P-GaN layer and a deposition ITO layer on a graphical substrate at one time; a step (2) of coating a layer of photoresistive liquid on the surface of the P-GaN layer or the ITO in a suspension manner; a step (3) of performing yellow light technologies such as pattern exposure, development and baking on the photoresistive liquid or adopting a nanometer impression mode to prepare a pattern; and a step (4) of selecting an ICP or wet etching method to transfer the pattern to an epitaxial wafer or the ITO layer. According to the invention, micropores are formed in the P-GaN layer or the ITO layer, so that on one hand, phenomena that light is reflected when passing through interfaces between the P-GaN layer, ITO and SiO2 and the air are prevented, and on the other hand, light absorption of the P-GaN layer and the ITO is lowered, the probability of light emission is effectively increased, and the luminous efficiency is improved. The method provided by the invention is easy to realize, controllable in process, and convenient in industrialized production via the conventional technology.

The invention belongs to the field of solid illumination, and in particular relates to a method for preparing a nanometer patterned substrate of LED (light emitting diode) chip epitaxial growth. The method particularly comprises the following steps: dropping silicon oxide nanometer balls which are dispersed uniformly on a sapphire substrate after cleaning treatment, and coating the silicon oxide nanometer balls on the surface of the sapphire substrate uniformly by utilizing a spin coating machine in a single layer mode; carrying out ICP (inductively coupled plasma) etching processing on the sapphire substrate which takes the silicon oxide nanometer balls as masks, and dividing the etching into two groups: firstly, etching the image depth of the nanometer patterned substrate by utilizing BC13 gas; and then etching the image width of the nanometer patterned substrate by utilizing BC13, C12, and Ar gas; and taking the sapphire substrate out after etching, and drying for use after corrosion and cleaning. According to the invention, the dislocation density in the LED chip can be reduced effectively, the occurrence of cracking can be avoided, the crystalline quality and uniformity of epitaxial materials can be improved, the probability of light emission of the light for the LED from the sapphire substrate is increased, and further the light-emitting efficiency of the LED chip can beimproved.

The invention relates to a scintillation crystal radiation detector with a special light emitting surface matched with a lens group. A matched wide-angle and large-depth-of-field lens group is constructed, so the collection efficiency of the optical sensor on the scintillation light is improved and the energy resolution is improved. The specific parameter design considers the matching with the emergent wave band of the scintillation crystal, so the incident light sensor for focusing and collecting the scintillation light can be increased, the energy resolution is improved, the shape of the light emitting surface of the scintillation crystal matched with the lens group is correspondingly designed, the measurement efficiency and the measurement precision are further improved, and the detection performance can be further improved especially when a high-performance detector is developed.

The invention relates to a scintillation crystal radiation detector with a special exit surface matched with a lens group. A matched wide-angle and large-depth-of-field lens group is constructed; thecollection efficiency of an optical sensor on the scintillation light is improved; the energy resolution is improved; matching with the emergent wave band of the scintillation crystal is considered inspecific parameter design ; the incident light sensor for focusing and collecting the scintillation light can be increased, the energy resolution is improved, the shape of the light emitting surfaceof the scintillation crystal matched with the lens group is correspondingly designed, the measurement efficiency and the measurement precision are further improved, and the detection performance can be further improved especially when a high-performance detector is developed.

The invention relates to a scintillation crystal radiation detector with a special light emitting surface matched with a lens group. A matched wide-angle and large-depth-of-field lens group is constructed, so the collection efficiency of the optical sensor on the scintillation light is improved and the energy resolution is improved. The specific parameter design considers the matching with the emergent wave band of the scintillation crystal, so the incident light sensor for focusing and collecting the scintillation light can be increased, the energy resolution is improved, the shape of the light emitting surface of the scintillation crystal matched with the lens group is correspondingly designed, the measurement efficiency and the measurement precision are further improved, and the detection performance can be further improved especially when a high-performance detector is developed.

The invention relates to a scintillating crystal radiation detector plated with a high reflecting film and a special light-out surface. According to the detector, the conception of performing pertinent film design according to a main transmitting waveband of a scintillating crystal itself is adopted, and the difficulties that the data volume is excessively large and analysis is not easy in thin film research are overcome; an appropriate reflecting film material is obtained, the material has adhesive force as good as the crystal, and film layers are small in quantity and easy to realize; and special light-out surface design matched with a total-reflection film plating scheme is further provided, and measurement efficiency and measurement precision are improved accordingly.

The invention relates to a scintillation crystal radiation detector with a special exit surface cooperated with a lens group. A matched wide-angle and large-depth-of-field lens group is constructed; the scintillation light collecting efficiency of a light sensor is improved; the energy resolution is improved; matching with the emergent waveband of the scintillation crystal itself is considered inspecific parameter design; more scintillation light is focused and collected and then input to the light sensor; the shape of the exit surface of the scintillation crystal cooperated with the lens group is designed correspondingly to further improve the measuring efficiency and precision; and in particular, the detection performance for researching and developing a high-performance detector can befurther improved.