Light-emitting diode chip and method of making the same

A technology of light-emitting diodes and chips, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems that the brightness of ODR chips is not as good as that of DBR, cannot be effectively used, and total reflection, etc., so as to save costs, reduce the probability of total reflection, and improve Effect of launch angle

Active Publication Date: 2017-04-12
XIANGNENG HUALEI OPTOELECTRONICS
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  • Abstract
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  • Claims
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Problems solved by technology

[0005] Although the reflectivity of DBR is high, DBR can only reflect in the vertical direction, and some totally reflected light will still be totally reflected after being reflected by DBR, so it cannot be effectively used
Although ODR can reflect light at all angles and reduce the probability of total reflection of light, but because the metal itself absorbs part of the light, the brightness of the ODR chip is not as good as that of DBR, and ODR needs to be plated with Al, Cr, Au and other precious metals, and the cost is relatively low. DBR high

Method used

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  • Light-emitting diode chip and method of making the same
  • Light-emitting diode chip and method of making the same
  • Light-emitting diode chip and method of making the same

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Embodiment Construction

[0027] Certain terms are used, for example, in the description and claims to refer to particular components. Those skilled in the art should understand that hardware manufacturers may use different terms to refer to the same component. The specification and claims do not use the difference in name as a way to distinguish components, but use the difference in function of components as a criterion for distinguishing. As mentioned throughout the specification and claims, "comprising" is an open term, so it should be interpreted as "including but not limited to". "Approximately" means that within an acceptable error range, those skilled in the art can solve the technical problem within a certain error range and basically achieve the technical effect. The subsequent description of the specification is a preferred implementation mode for implementing the application, but the description is for the purpose of illustrating the general principle of the application, and is not intended...

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Abstract

The invention discloses a light emitting diode chip. The light emitting diode chip is characterized by comprising a current expanding layer, an epitaxial layer, a graphical sapphire substrate and a distributed Bragg reflecting layer, wherein the epitaxial layer is arranged below the current expanding layer; the graphical sapphire substrate is arranged below the epitaxial layer and is provided with an upper surface and a lower surface, and the upper surface is close to the epitaxial layer; the distributed Bragg reflecting layer is used for covering the lower surface of the graphical sapphire substrate. The light emitting diode chip is manufactured by combining a graphical sapphire substrate technology with a distributed Bragg reflection technology, the light emission angle of the bottom of the light emitting diode chip is increased, the probability of total reflection of light of the distributed Bragg reflection technology is reduced and the light emergent probability is increased.

Description

technical field [0001] The present application relates to the manufacturing technology of light-emitting diode chips, and more specifically, relates to a light-emitting diode chip and its manufacturing method which are manufactured by using patterned sapphire substrate technology and distributed Bragg reflection technology at the same time. Background technique [0002] A light-emitting diode (Light-Emitting Diode, referred to as LED) is a semiconductor electronic device that converts electrical energy into light energy. When electric current flows, electrons and holes recombine in it to emit monochromatic light. LED lighting has been widely used in home, decoration, office, signboard and even street lighting. [0003] There are roughly three types of substrate materials for LED chips: sapphire (Al2O3), silicon (Si), and silicon carbide (SiC). The LED chip with sapphire as the substrate refers to gallium nitride (GaN)-based materials and epitaxial layers of devices grown o...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/02H01L33/10H01L33/00
CPCH01L33/007H01L33/10H01L33/20
Inventor 胡弃疾苗振林汪延明
Owner XIANGNENG HUALEI OPTOELECTRONICS
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