51results about How to "Reduce the chance of total reflection" patented technology

The embodiment of the invention provides a display panel and a manufacturing method thereof, and a display device. The display panel comprises a substrate, a light-emitting device layer and a light adjusting structure layer, wherein the light-emitting device layer is located on the substrate, and comprises a plurality of light-emitting devices, the light adjusting structure layer is located on theside, away from the substrate, of the light-emitting device layer, and comprises a plurality of light adjusting units and a dielectric layer covering the plurality of light adjusting units, the refractive index of the light adjusting units is smaller than that of the dielectric layer, each light adjusting unit comprises a light adjusting sub-part, each light adjusting unit comprises a through hole, the through holes penetrate through the light adjusting units in the direction perpendicular to the substrate, the through holes are overlapped with the light emitting device, and the light adjusting sub-parts are arranged around the through holes. For one light adjusting unit, the thickness of the light adjusting part is gradually increased in the direction from the through hole to the light adjusting sub-part. The probability that light rays are totally reflected in the display panel and limited in the display panel can be reduced, and the light emitting efficiency of the light emitting device is improved.

The invention discloses an LED structure and a fabrication method. The method comprises the following steps: placing a substrate in a solution for reaction; naturally forming a chemical reaction layer on the surface of a cutting street region of the substrate; forming a plurality of concave parts and convex parts on the surface of the cutting street region by selective etching; growing a semiconductor layer structure on a component region and the cutting street region on the surface of the substrate by an epitaxial growth technology; and then forming the LED by the semiconductor layer structure on the component region using yellow light lithography process.

A light emitting diode crystalline grain comprises a substrate and an epitaxial layer which is formed on the substrate. The substrate comprises an upper surface. The epitaxial layer comprises a first semiconductor layer close to the substrate, a second semiconductor layer far away from the substrate, and an active layer arranged between the first semiconductor layer and the second semiconductor layer. The edge of the top, far away from the substrate, of the epitaxial layer is provided with an arc angle or a slant chamfer, and therefore light can be emitted from the side face of the epitaxial layer favorably, and luminous efficiency of the light emitting diode crystalline grain is improved.

The invention relates to the inner total-reflection prism of a projecting device, and consists of a first prism, a second prism and a total-reflection resistant layer. The first prism is provided with a first surface, a second surface and a third surface, while the second prism is provided with a light-in surface and a light-out surface. The light-out surface is opposite to the first surface, anda clearance is formed between the light-out surface and the first surface. The total-reflection resistant layer is connected between the part of the light-out surface and the part of the first surface. With the total-reflection resistant layer arranged, the probability of occurrences of total reflections in the inner total-reflection prism for illuminating rays is lowered, thereby, the utilization efficiency of the illuminating rays can be improved, and then the brightness of images are enhanced.

The invention discloses a manufacturing method for surface roughening of a GaN-based optoelectronic device, which comprises the following steps of: 1, taking a substrate; 2, epitaxially growing an n-type layer, an i-type layer and a p-type layer in turn on the substrate; 3, processing a nano column array on the p-type layer by using nano processing technology; and 4, epitaxially growing a p-type surface roughened layer on the nano column array.

The invention discloses a white light LED light source component and a production method thereof. The white light LED light source component comprises an yttrium aluminum garnet phosphor powder fluorescent glass matrix, an LED blue light chip, and a connecting circuit. The melting point of the matrix is 400-600 degrees centigrade; and the matrix comprises 45-55wt% of PbO, 20-30wt% of SiO2, 15-20wt% of ZnO, and 0.5-5wt% of yttrium aluminum garnet phosphor powder. The LED blue light chip is fixed on the surface of the matrix and the light-emitting surface of the LED blue light chip faces to the matrix. The connecting circuit is used for connecting the LED blue light chip with an external power supply. The disclosed white light LED light source component breaks the limitation of light-emitting angle of the LED single-side lamp source in the prior art by arranging the LED blue light chip and the connecting circuit on the fluorescent glass matrix which has a low melting point; therefore, a wide-angle light emission is achieved by a simple manufacturing technology. The disclosed white light LED light source component has very high light-emitting efficiency.

The invention discloses an organic electroluminescent device and its preparation method. A polymer layer is firstly prepared on a glass substrate, thus reducing refractive index difference between the glass substrate and the air. A scattering layer is prepared on the polymer layer. Then, light which reaches a polymer can be scattered, and light which is emitted to two sides can return to the middle. Thus, luminous efficiency is raised. Transmission band of silicon oxide is wide, and silicon oxide has a high anti-reflection effect. Refractive index difference between the polymer layer and the air also can be further minimized, total reflection probability is reduced, and more light is emitted to the air. The preparation method is simple and easy to control and operate, and raw materials are easily available.

The invention discloses a backlight module. The backlight module comprises at least one light source, a light guide plate and a refractive medium. A light incidence surface of the light guide plate is adjacent to the light source, the refractive medium is adhered to the light incidence surface and an air gap is formed between the refractive medium and the light incidence surface, the refractive index of the refractive medium is smaller than the refractive index of the light guide plate, and the light beams which are emitted by the light source pass through the air gap and the refractive medium sequentially and then enter the light guide plate through the light incidence surface. The backlight module can effectively improve the light utilization rate, and can keep the air gap between the light guide plate and the light source.

The invention discloses an LED packager comprising a carrier, an LED chip and a plurality of conductors, wherein the LED chip is provided with a front surface, a back surface and a plurality of side walls connected between the front surface and the back surface; one side wall of the LED chip faces the carrier and is connected with the carrier; and the conductors are electrically connected betweenthe carrier and the LED chip.

The embodiment of the invention discloses a display panel, a preparation method thereof and a display device. The display panel comprises a light-emitting layer and a thin film packaging layer. The light-emitting layer comprises a plurality of sub-pixel units. The thin film packaging layer comprises a first inorganic layer, a base layer and a second inorganic layer which are sequentially stacked on the light-emitting layer in the longitudinal direction. One surface, far away from the light-emitting layer, of the first inorganic layer is provided with a plurality of nano bulges; the plurality of nano bulges are arranged on one surface, far away from the light-emitting layer, of the first inorganic layer, and the incident angle of the divergent light of the light-emitting layer can be reduced through the nano bulges, so that the probability of total reflection is reduced, more light is helped to pass through the interface of the first inorganic layer and the organic layer, the light-emitting efficiency of the light-emitting layer is improved, and the display effect of the display panel is improved.