51results about How to "Reduce the chance of total reflection" patented technology

The invention discloses a large-angle LED (Light Emitting Diode) lens, comprising a main body, wherein the lower end of the main body is provided with an opening, the main body is shell-shaped and is provided with light-incident surfaces and light-emergent surfaces; the light-incident surfaces are symmetrically arranged around the central axis of the main body, and are positioned at the inner sides of the main body; the light-emergent surfaces are arranged at the outer side of the main body; the light-incident surfaces are light-transmitting concave surfaces; the light-emergent surfaces are light-transmitting convex surfaces; the maximum thickness d1 of the lower part of the main body and the minimum thickness d2 of the top part of the main body meet the condition that d1 / d2 is more than 4 and less than 6; the concave depth h1 of each light-transmitting concave surface and the minimum thickness d2 of the top part of the main body meet the relation: h1 is more than 4*d2; and the convex height h2 of the light-transmitting convex surface and the minimum thickness d2 of the top part of the main body meet the relation: h2 is more than 5*d2. The large-angle LED lens disclosed by the invention has the advantages that the light beam angle of the large-angle lens is converted to be larger than 130 degrees so as to realize large-angle illumination and simultaneously improve the illumination uniformity; and due to the design with the light-transmitting concave surfaces and the light-transmitting convex surfaces, the total reflection probability of light is reduced to be lowest, so that the enlarging of the light-emergent angle is ensured, simultaneously, the efficiency of the lens is also enabled to be 90%, and the light utilization rate is furthest increased. The invention also discloses a large-angle light-emergent LED light source module.

The invention discloses an LED structure and a fabrication method. The method comprises the following steps: placing a substrate in a solution for reaction; naturally forming a chemical reaction layeron the surface of a cutting street region of the substrate; forming a plurality of concave parts and convex parts on the surface of the cutting street region by selective etching; growing a semiconductor layer structure on a component region and the cutting street region on the surface of the substrate by an epitaxial growth technology; and then forming the LED by the semiconductor layer structureon the component region using yellow light lithography process.

The invention discloses an LED packager comprising a carrier, an LED chip and a plurality of conductors, wherein the LED chip is provided with a front surface, a back surface and a plurality of side walls connected between the front surface and the back surface; one side wall of the LED chip faces the carrier and is connected with the carrier; and the conductors are electrically connected betweenthe carrier and the LED chip.

The invention provides a manufacturing method for a light-emitting diode. The method includes the following steps: firstly, depositing a light-emitting epitaxial layer which, includes at least an N-type layer, a quantum well layer and a P-type layer, on the surface of a semiconductor substrate; then etching the P-type layer and the quantum well layer and then forming an N-electrode preparation area; then forming an ITO transparent conductive layer on the surface of the P-type layer and preparing a P-electrode on the surface of the ITO transparent conductive layer and preparing an N-electrode on the N-electrode preparation area; then placing the structure in a mixed liquid of a ZnO powder and an HCI solution and depositing a ZnO thin film on the surface of the structure; and at last, removing the P-electrode, the N-electrode and the ZnO thin film on the surface of the N-electrode preparation area so as to complete the manufacturing of the light-emitting diode. The manufacturing method for the light-emitting diode has the following beneficial effects: the ZnO thin film, which does not damage the light-emitting diode and the surface of which is roughened, on the ITO transparent conductive layer on the surface of a P-GaN surface so that reduction of a total-reflection rate of light in the light-emitting diode is facilitated and thus the brightness of the light-emitting diode is improved.

The invention relates to a method for measuring GaAs-based semiconductor laser epitaxial wafer light-emitting wavelength and application thereof. A GaAs-based semiconductor laser epitaxial wafer comprises a substrate, a lower wrapping layer, an active region, an upper wrapping layer and a contact layer from the bottom up in sequence. The method has the following specific steps: 1) growing a layer of dielectric film, non-absorbing the light emitted by the active region, on the surface of the GaAs-based semiconductor laser epitaxial wafer, wherein refractive index m of the dielectric film is larger than 1 and smaller than n, n being refractive index of the light, emitted by the GaAs-based semiconductor laser epitaxial wafer, in the GaAs, and the thickness d of the dielectric film is larger than 0 and equal to or smaller than lambda / 2m, lambda being the wavelength of the light emitted by the GaAs-based semiconductor laser epitaxial wafer, and the surface of the dielectric film is rough; 2) carrying out routine photoluminescence test; and 3) removing the dielectric film. According to the method, the probability of total reflection when the light emitted by the GaAs-based semiconductor laser epitaxial wafer is incident to the air is greatly reduced, and the number of light rays escaping out of the epitaxial wafer is increased.

The invention discloses an area light source, which comprises a substrate, a patterned scattering layer and an organic electro-luminescence element, wherein the patterned scattering layer is arranged on a part of the area of the substrate and is provided with a bottom face contacting the substrate, a top face opposite to the bottom face and a plurality of side walls connecting the bottom face andthe top face; and the organic electro-luminescence element is at least arranged on the side walls.

The invention discloses a light-emitting diode of a novel structure. The light-emitting diode comprises a transparent substrate, an outwards-extending sheet, a first electrode and a second electrode. The outwards-extending sheet sequentially comprises an n type ohm layer, an n type roughening layer, an n type limiting layer, an active layer, a P type limiting layer, a p type roughening layer and a p type ohm layer. The area of the end face of the n type ohm layer is smaller than that of the end face of the n type roughening layer, the area of the end face of the p type ohm layer is smaller than that of the end face of the p type roughening layer, one side, close to the p type ohm layer and the p type roughening layer, of the outwards-extending sheet is adhered to the transparent substrate through a transparent conductive adhesive layer, the first electrode is connected to the n type ohm layer, the second electrode is connected to the transparent conductive adhesive layer, the outer surfaces of the p type roughening layer and the n type roughening layer are etched to be in the convex-concave shape through corrosive liquid, and the outer end face of the p type ohm layer is further plated with an alloy layer. The invention further discloses a manufacturing method of the light-emitting diode, the light-emitting diode of the novel structure and the manufacturing method of the light-emitting diode effectively reduce loss of emitted light generated by full reflection in the light-emitting diode and improve light-emitting efficiency.

The invention provides an optical film, including a substrate, a plurality of first light gathering structures and a plurality of diffusion structures. The substrate has a light inlet face and a light outlet face which are opposite. The first light gathering structures are disposed on the light inlet face. Each of first light gathering structures has opposite bottom face and top corner and the bottom face is connected with the ligth inlet face. The diffusion structures are respectively disposed in the gaps between the first light gathering structures. The diffusion structures are adjacent to the first light gathering structures and the top corner of each of the first light gathering structures and the bottom face far away from the substrate of each of the diffusion structures are in the same plane. The optical film has the good light gathering efficiency.

The invention discloses a light-emitting diode chip and a manufacturing method thereof. The light-emitting diode chip comprises: an epitaxial layer with a concave-convex microstructure; a patterned first current spreading layer formed on the convex surface of the epitaxial layer; a second current spreading layer Layer, covering the upper surface of the patterned first current spreading layer and the uneven surface of the epitaxial layer without masking the first current spreading layer, the double current spreading layer formed in this way and the epitaxial layer with a concave-convex microstructure can not only Reducing the probability of total reflection and reducing internal reflection and absorption can also improve the expansion of the current, increase the injection efficiency of the current, and reduce the operating voltage of the device, thereby improving the luminous efficiency and brightness of the LED.