A method of manufacturing a light emitting diode

Abstract

The invention provides a manufacturing method for a light-emitting diode. The method includes the following steps: firstly, depositing a light-emitting epitaxial layer which, includes at least an N-type layer, a quantum well layer and a P-type layer, on the surface of a semiconductor substrate; then etching the P-type layer and the quantum well layer and then forming an N-electrode preparation area; then forming an ITO transparent conductive layer on the surface of the P-type layer and preparing a P-electrode on the surface of the ITO transparent conductive layer and preparing an N-electrode on the N-electrode preparation area; then placing the structure in a mixed liquid of a ZnO powder and an HCI solution and depositing a ZnO thin film on the surface of the structure; and at last, removing the P-electrode, the N-electrode and the ZnO thin film on the surface of the N-electrode preparation area so as to complete the manufacturing of the light-emitting diode. The manufacturing method for the light-emitting diode has the following beneficial effects: the ZnO thin film, which does not damage the light-emitting diode and the surface of which is roughened, on the ITO transparent conductive layer on the surface of a P-GaN surface so that reduction of a total-reflection rate of light in the light-emitting diode is facilitated and thus the brightness of the light-emitting diode is improved.

Description

technical field [0001] The invention belongs to the field of semiconductor lighting, in particular to a method for manufacturing a light emitting diode. Background technique [0002] As a new type of high-efficiency solid light source, semiconductor lighting has significant advantages such as long life, energy saving, environmental protection, and safety. It will become another leap in the history of human lighting after incandescent lamps and fluorescent lamps. The upgrading of the industry and other industries has huge economic and social benefits. Because of this, semiconductor lighting is generally regarded as one of the most promising emerging industries in the 21st century, and also one of the most important commanding heights in the field of optoelectronics in the next few years. Light-emitting diodes are made of III-IV compounds, such as GaAs (gallium arsenide), GaP (gallium phosphide), GaAsP (gallium arsenide phosphide) and other semiconductors, and its core is a P...

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Problems solved by technology

[0005] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a method for manufacturing a light-emitting diode, which is used to solve the problem in the prior art that the light output rate is reduced due to the total reflection of the light by the light-emitting diode

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