LED structure and manufacturing method thereof

A technology of light-emitting diodes and manufacturing methods, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of cumbersome and time-consuming, increase costs, and do not meet the commercial application of light-emitting diodes, so as to reduce the probability of total reflection, make it simple, Effect of improving light extraction rate
CN101414653AInactive Publication Date: 2009-04-22TEKCORE CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
TEKCORE CO LTD
Publication Date
2009-04-22
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention discloses an LED structure and a fabrication method. The method comprises the following steps: placing a substrate in a solution for reaction; naturally forming a chemical reaction layer on the surface of a cutting street region of the substrate; forming a plurality of concave parts and convex parts on the surface of the cutting street region by selective etching; growing a semiconductor layer structure on a component region and the cutting street region on the surface of the substrate by an epitaxial growth technology; and then forming the LED by the semiconductor layer structure on the component region using yellow light lithography process.
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Description

technical field

[0001] The present invention relates to a light emitting diode structure and a manufacturing method, in particular to a light emitting diode structure and a manufacturing method in which a plurality of concave parts and convex parts are formed on the surface of the cutting line area. Background technique

[0002] In order to realize solid-state lighting, it is imperative to develop and improve the luminous efficiency of light-emitting diodes. The ways to improve the luminous efficiency of LEDs can be divided into two parts: one is to improve the internal quantum efficiency of LEDs; the other is to increase the external quantum efficiency (light extraction rate) of LEDs.

[0003] In terms of external quantum efficiency, because the refractive index of the general semiconductor material and the packaging material is very different, the total reflection angle is small, so when the light generated by the light-emitting diode reaches the interface with the air, th...

Claims

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