Light emitting diode array and manufacturing method thereof

Abstract

The invention relates to a light emitting diode array which comprises a substrate and a plurality of light emitting diodes formed at one side of the substrate, wherein the plurality of light emitting diodes are electrically connected; each light emitting diode comprises a connection layer, an n-type gallium nitride layer, a light emitting layer and a p-type gallium nitride layer, which are orderly formed on the substrate; the connection layer can be etched by alkaline solution; the bottom surface of the n-type gallium nitride layer facing to the connection layer is oppositely polarized gallium nitride, and a bared roughened surface is arranged on the bottom surface. The invention also relates to a manufacturing method of the light emitting diode array.

Description

technical field

[0001] The invention relates to a semiconductor element, in particular to a light emitting diode array and a manufacturing method thereof. Background technique

[0002] Now, light emitting diodes (Light Emitting Diodes, LEDs) have been widely used in lighting and other fields. In order to improve lighting brightness, people often use light emitting diode arrays composed of multiple light emitting diodes in lamps and the like. However, the light generated by the light emitting diode can only be emitted to the outside world when the angle is less than the critical angle. Otherwise, due to internal total reflection, a large amount of light will be lost inside the light emitting diode and cannot be emitted to the outside world, resulting in the loss of the entire light emitting diode array. The light output rate is low and the brightness is not high. At present, the technology of using etching to roughen the surface of LEDs to increase the brightness of LEDs is ...

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