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265results about How to "Increase image brightness" patented technology

Mine image enhancement method based on bilateral filtering and multi-scale Retinex algorithm

InactiveCN105844601AEliminate halo phenomenonEnhance image details and edge characteristicsImage enhancementWavelet decompositionRetinex algorithm
The invention discloses a mine image enhancement method based on bilateral filtering and a multi-scale Retinex algorithm. The method comprises the steps that 1 image wavelet decomposition is carried out to acquire high frequency and low frequency coefficients of an image; 2 the multi-scale Retinex algorithm and bilateral filtering are carried out on the low frequency coefficient of the image; 3 a soft threshold filtering algorithm is carried out on the high frequency coefficient of the image; 4 a discrete wavelet inverse transform formula is used to acquire an enhanced spatial domain image; and 5 local self-adaptive contrast enhancing is carried out on the enhanced spatial domain image. Compared with the existing enhancement method, the enhancement method provided by the invention has the advantage that based on wavelet transformation, the multi-scale Retinex algorithm and bilateral filtering are combined for processing; self-adaptive contrast enhancing is finally carried out; a processed picture has the advantages of rich detail, being structured and easy identification; and the shortcomings of halo, blurry detail and poor contrast of a result processed by a traditional scheme are overcome.
Owner:CHINA UNIV OF MINING & TECH (BEIJING)

Method of manufacturing liquid crystal display

On a substrate, the pattern of the first conductive layer is defined, that is, a gate line combination including gate pads, scanning lines and gate electrodes. A gate insulating layer, a semiconductor layer, a doped semiconductor layer and a second conductive layer are deposited on the substrate and the above-mentioned gate line combination in sequence. A photoresist layer is overlaid on the second conductive layer. The photoresist layer within the aperture areas is fully exposed. Using a half-tone mask or a slit pattern to make parts of the photoresist layer lying on the gate pads and the gate electrodes are not exposed to its full depth. As a result, the photoresist pattern formed varies in thickness. After being processed with drying etching and wet etching for several times, all the layers previously deposited within the aperture areas can be totally etched and removed. However, as regards the layers deposited on the gate pads and the gate electrodes, etching only takes place in those layers above the semiconductor layer. Then, an organic protection layer is laid on the substrate and the above-mentioned structure, and the holes, which are to function as the passageways for the transparent conductive layer to contact the metallic layer, are defined on the organic protection layer. Then, the gate pads are exposed out of holes above them, using dry etching again. Lastly, the pattern of the transparent conductive layer is defined on the organic protection layer and in the plurality of holes.
Owner:HANNSTAR DISPLAY CORPORATION
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