Light emitting diode crystalline grain

Abstract

A light emitting diode crystalline grain comprises a substrate and an epitaxial layer which is formed on the substrate. The substrate comprises an upper surface. The epitaxial layer comprises a first semiconductor layer close to the substrate, a second semiconductor layer far away from the substrate, and an active layer arranged between the first semiconductor layer and the second semiconductor layer. The edge of the top, far away from the substrate, of the epitaxial layer is provided with an arc angle or a slant chamfer, and therefore light can be emitted from the side face of the epitaxial layer favorably, and luminous efficiency of the light emitting diode crystalline grain is improved.

Description

technical field [0001] The invention relates to a semiconductor structure, in particular to a light emitting diode crystal grain. Background technique [0002] Existing light emitting diode (Light Emitting Diode, LED) grains include a substrate, an epitaxial layer structure grown on the substrate, and electrodes. The epitaxial layer structure usually includes an N-type semiconductor layer, an active layer, and a P-type semiconductor layer, which are sequentially grown upward from the substrate. In order to make the current evenly distributed and improve the luminous efficiency of the grain, the industry usually adds a transparent electrode between the P-type semiconductor layer and the electrode. [0003] However, the epitaxial layer structure grown sequentially on the substrate usually has a vertical sharp corner away from the top edge of the substrate, see figure 1 , some light emitted from the active layer 3, such as light A with an angle γ between the active layer 3 an...

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Problems solved by technology

[0003] However, the epitaxial layer structure grown sequentially on the substrate usually has a vertical sharp corner away from the top edge of the substrate, see figure 1 , some light emitted from the active layer 3, such as light A with an angle γ between the active layer 3 and the incident angle α on the side 2 of the epitaxial layer is relatively large, so it is easy to be totally reflected, which is not conducive to the epitaxial layer The light output from the side of the structure affects the light output efficiency of the entire LED grain

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