LED flip chip and patterned substrate and manufacturing method of LED flip chip

Abstract

The invention relates to an LED flip chip and a patterned substrate and manufacturing method of the LED flip chip. The surface of the patterned substrate is provided with grooves or a pattern array, wherein the cross sections of the grooves are triangular, the grooves are parallel to one another, and the pattern array is composed of protrusion structures which are arranged to form a regular shape. The LED flip chip comprises the patterned substrate, an epitaxial layer, P electrodes and N electrodes. The patterned substrate is arranged on the upper surface of the epitaxial layer. The P electrodes and the N electrodes are respectively arranged on the lower surface of the epitaxial layer. By means of the LED flip chip, the patterned substrate and the manufacturing method, the probability that photons are emitted out of the chip can be increased, and in other words, the light ray extraction efficiency of devices is increased so that the brightness of LEDs and the electro-optical conversion efficiency can be improved.

Description

technical field [0001] The invention relates to the technical field of manufacturing LED optoelectronic devices, in particular to an LED flip chip, a patterned substrate of the LED flip chip and a manufacturing method. Background technique [0002] Using Al Arsenide x In y Ga 1-x-y As(0≤x,y≤1; x+y≤1), phosphide Al x In y Ga 1-x-y P(0≤x,y≤1; x+y≤1), nitride Al x In y Ga 1-x-y N (0≤x, y≤1; x+y≤1; wurtzite crystal structure) light-emitting diode LEDs made of semiconductor materials are gradually being used in electronic display screens, landscape lighting, miner's lamps, and street lamps due to their advantages in energy saving, environmental protection, and long life. , liquid crystal display backlight, general lighting, optical disc information storage, biomedicine and other fields are widely used. The above-mentioned compound semiconductors can cover the entire spectral energy range from infrared, visible to ultraviolet light, and the emission wavelength of LED devi...

AI Technical Summary

Problems solved by technology

Therefore, it is necessary to pattern the surface of the substrate material to improve the light extraction efficiency and minimize the reduction of device efficiency due to total reflection.

[0004] Taking GaN-based blue LED epitaxial growth in the direction of SiC (0001) crystal plane and making flip chip as an example, since more light is to be emitted from the substrate surface (the side where the epitaxial growth is not performed), the light from The total reflection angle of SiC incident into the air is only about 22 degrees (the refractive index of SiC is 2.7, and the air is 1.0), so it is necessary to roughen or pattern the surface of the substrate, otherwise, from the active area It will be difficult for the recombined photons to escape from the device, and the external quantum efficiency of the device will be significantly reduced

At the same time, since the generated photons cannot be effectively extracted, the heat conversion of the device will be increased, which will further adversely affect the quality characteristics of the device such as efficiency, performance parameters and reliability.

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