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Light-emitting diode crystal grain and manufacturing method thereof

A technology of light-emitting diodes and grains, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of reducing the light-emitting efficiency of light-emitting diode grains, and achieve the effect of improving light-emitting efficiency

Active Publication Date: 2016-01-06
ZHANJING TECH SHENZHEN +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the above-mentioned structure has the following problems: the light emitted by the semiconductor light-emitting structure toward the substrate side will be absorbed by the substrate after entering the substrate, thereby reducing the light extraction efficiency of the light-emitting diode crystal grains

Method used

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  • Light-emitting diode crystal grain and manufacturing method thereof
  • Light-emitting diode crystal grain and manufacturing method thereof
  • Light-emitting diode crystal grain and manufacturing method thereof

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Embodiment Construction

[0017] Such as figure 1 , the light emitting diode die 100 provided by the first embodiment of the present invention, which sequentially includes: a substrate 10 , a buffer layer 20 formed on the substrate 10 , a transition layer 30 formed on the buffer layer 20 , and a transition layer 30 formed on the transition layer 30 A plurality of spherical aluminum nitride 40 is formed on the transition layer 30 and covers the epitaxial layer 50 of the plurality of spherical aluminum nitride 40 .

[0018] The substrate 10 can be made of sapphire, silicon carbide (SiC), silicon (Si), gallium nitride (GaN) and other materials, preferably sapphire in this embodiment, so as to control the manufacturing cost of the light emitting chip.

[0019] The buffer layer 20 and the transition layer 30 can be grown on the substrate by Metal-Organic Chemical Vapor Deposition (MOCVD), Molecular Beam Epitaxy (MBE) or Halide Chemical Vapor Epitaxy (HVPE). The surface of the substrate 10. Since the buffe...

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Abstract

A light emitting diode (LED) comprises a substrate, an epitaxial layer and an aluminum nitride (AlN) layer sequentially disposed on the substrate. The AlN layer comprises a plurality of stacks separated from each other, wherein the epitaxial layer entirely covers the plurality of stacks of the AlN layer. The AlN layer with a plurality of stacks reflects upwardly light generated by the epitaxial layer and downwardly toward the substrate to an outside of LED through a top plan of the LED. A method for forming the LED is also disclosed.

Description

technical field [0001] The invention relates to a light-emitting diode crystal grain and a manufacturing method thereof, in particular to a light-emitting diode crystal grain with high light extraction efficiency and a manufacturing method thereof. Background technique [0002] A light emitting diode (Light Emitting Diode, LED) is a semiconductor element that can convert current into light in a specific wavelength range. Light-emitting diodes can be widely used as light sources in the field of lighting because of their advantages such as high brightness, low operating voltage, low power consumption, easy matching with integrated circuits, simple driving, and long life. [0003] Existing light-emitting diode grains generally include a substrate and a semiconductor light-emitting structure grown on the surface of the substrate. However, the above structure has the following problem: the light emitted by the semiconductor light-emitting structure towards the substrate will be ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/10H01L33/00
CPCH01L33/007H01L21/76856H01L33/0075H01L33/10H01L33/22
Inventor 黄嘉宏黄世晟凃博闵杨顺贵林雅雯
Owner ZHANJING TECH SHENZHEN
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