High light extraction efficiency Gan-based LED transparent electrode structure and preparation method

Abstract

The invention relates to a transparent electrode structure and a preparation method thereof, particularly relates to a transparent electrode structure of a GaN-based LED (Light Emitting Diode) with high light extraction efficiency and a preparation method thereof and belongs to the technical field of LED semiconductor devices. According to the technical scheme provided by the invention, the transparent electrode structure comprises a GaN substrate, wherein the GaN substrate is provided with a nano column layer and an ITO (Indium Tin Oxide) layer covering the nano column layer; the nano column layer comprises a plurality of nano columns; the ITO layer covers on the nano columns and column disconnecting holes at the two sides of the nano columns are filled with the ITO layer, so that the ITO layer and the GaN substrate are contacted. The transparent electrode structure has the advantages that the light extraction efficiency of the GaN-based positive LED can be obviously improved, the process operation is convenient, the cost is low, the application range is wide, and the safe and reliable effects are achieved.

Description

technical field [0001] The invention relates to a transparent electrode structure and a preparation method, in particular to a high light extraction efficiency GaN-based LED transparent electrode structure and a preparation method, belonging to the technical field of LED semiconductor devices. Background technique [0002] The popularity of solid-state lighting applications in the future depends on the development of high-efficiency GaN-based LED preparation technology. One of the fundamental obstacles restricting the performance improvement of GaN-based front-mount LEDs is the high refractive index (relative to the external medium) of its constituent materials. Due to the significant difference in the refractive index between the GaN-based material (n=2.3) and the air medium (n=1), the light escape cone angle of the GaN-based front-mount LED is relatively small, and most of the light is difficult to exit from the device and be lost. the light extraction efficiency of the d...

AI Technical Summary

Problems solved by technology

It has been reported that using natural lithographic patterning technology to roughen the ITO transparent electrode layer; adjusting the MOCVD epitaxial growth conditions to form p-GaN surface micropits; What is more, the above-mentioned method itself also has obvious shortcomings and deficiencies.

ITO roughening usually requires dry etching, which usually results in deterioration of the electrical properties of ITO; epitaxial roughening of the p-GaN surface will sacrifice growth quality and doping efficiency to a certain extent; chemical growth of ZnO nanocolumns is complicated, and nanocolumns Adhesion is also difficult to guarantee

So far, the preparation method with good comprehensive effect and simple operation is rarely mentioned

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